Inventor · disambiguated record
Yu-Chen Chan
Also filed as: CHAN YU-CHEN
18 granted patents·15 pending applications·14 citations·filing 2017–2025
89Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD33
Top patents by PatentIndex Score
33 records- 0195US11309241B2Protection liner on interconnect wire to enlarge processing window for overlying interconnect viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·3 cites·20 claims
- 0293US10141260B1Interconnection structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 27, 2018·8 cites·20 claims
- 0383US11081447B2Graphene-assisted low-resistance interconnect structures and methods of formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·2 cites·20 claims
- 0483US2024379559A1Graphene-assisted low-resistance interconnect structures and methods of formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0582US12113021B2Graphene-assisted low-resistance interconnect structures and methods of formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 0681US2025364417A1Semiconductor device including graphene interconnect and method of making the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0778US2024379558A1Interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0877US2024282697A12d layer on interconnect conductive structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0976US12068254B2Interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 1076US11908794B2Protection liner on interconnect wire to enlarge processing window for overlying interconnect viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
- 1175US10741493B2Interconnection structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 11, 2020·1 cites·20 claims
- 1274US11710700B2Graphene-assisted low-resistance interconnect structures and methods of formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·0 cites·20 claims
- 1374US2024387251A1Interconnect structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1473US12051645B2Two 2D capping layers on interconnect conductive structure to increase interconnect structure reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
- 1573US2024321632A1Semiconductor device including liner structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1673US2024363538A1Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1772US2024203789A1Semiconductor structure having vertical conductive graphene and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1871US11640940B2Methods of forming interconnection structure including conductive graphene layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 2, 2023·0 cites·20 claims
- 1969US12211740B2Interconnect structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 28, 2025·0 cites·20 claims
- 2069US11532549B2Two 2D capping layers on interconnect conductive structure to increase interconnect structure reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 2169US2023378067A1Semiconductor structure having verticle conductive graphene and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2268US11011467B2Method of forming interconnection structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 18, 2021·0 cites·20 claims
- 2367US11948837B2Semiconductor structure having vertical conductive graphene and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·0 cites·20 claims
- 2467US11670595B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 2566US12417981B2Semiconductor device including graphene interconnect and method of making the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 16, 2025·0 cites·20 claims
- 2665US12068253B2Semiconductor structure with two-dimensional conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 20, 2024·0 cites·20 claims
- 2761US2023066891A1Semiconductor structure having verticle conductive graphene and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Application pending·0 cites
- 2861US2025343150A1Semiconductor structure including conductive feature with semimetal portion and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2960US12027419B2Semiconductor device including liner structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 2, 2024·0 cites·20 claims
- 3057US2025079314A1Interconnect structure including conductive feature with low contact resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3156US2025054810A1Semiconductor structure including cap layer of two-dimensional material and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3254US2024088042A1Semiconductor structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3352US2024071822A1Low resistance interconnect features and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →