Inventor · disambiguated record
Yung-Hsiang Chan
Also filed as: Chan Yung-Hsiang
13 granted patents·8 pending applications·11 citations·filing 2016–2025
84Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD21
Top patents by PatentIndex Score
21 records- 0189US10026838B2Fin-type field effect transistor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 17, 2018·11 cites·16 claims
- 0284US12302627B2Semiconductor device with non-conformal gate dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 0383US12317574B2Device providing multiple threshold voltages and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 0482US2025267920A1Semiconductor device with non-conformal gate dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0580US12080604B2Gate-all-around semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·20 claims
- 0680US2025287677A1Device providing multiple threshold voltages and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0779US11908745B2Semiconductor device with non-conformal gate dieletric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 20, 2024·0 cites·20 claims
- 0878US2024379444A1Gate-all-around semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0977US2025359217A1Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1073US2024387277A1Multiple threshold voltage implementation through lanthanum incorporationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1172US11605563B2Semiconductor device with non-conformal gate dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 1272US2024387639A1Semiconductor structures with multiple threshold voltage offerings and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1371US12009400B2Device providing multiple threshold voltages and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 11, 2024·0 cites·20 claims
- 1471US2024387682A1Metal gates and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1571US2025324672A1Method of manufacturing semiconductor devices and semiconductor devices with dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1669US11791214B2Gate-all-around semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·0 cites·20 claims
- 1768US12464789B2Semiconductor device structure and method for forming the semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 4, 2025·0 cites·20 claims
- 1865US12154964B2Metal gates with layers for transistor threshold voltage tuning and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 26, 2024·0 cites·20 claims
- 1963US12426309B2Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 2062US12142640B2Semiconductor structures with multiple threshold voltage offerings and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 12, 2024·0 cites·20 claims
- 2148US11664279B2Multiple threshold voltage implementation through lanthanum incorporationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 30, 2023·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →