Inventor · disambiguated record
Yu-Hsing Chang
Also filed as: CHANG YU-HSING
34 granted patents·5 pending applications·117 citations·filing 2012–2025
96Inventor score
Top patents by PatentIndex Score
39 records- 0199US11361971B2High aspect ratio Bosch deep etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·5 cites·20 claims
- 0298US11973149B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 30, 2024·2 cites·20 claims
- 0398US11575052B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 7, 2023·4 cites·15 claims
- 0498US10734394B2Cell boundary structure for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 4, 2020·5 cites·20 claims
- 0597US10134748B2Cell boundary structure for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·14 cites·20 claims
- 0696US9570454B2Structure with emedded EFS3 and FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·15 cites·20 claims
- 0795US9178144B1RRAM cell with bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 3, 2015·25 cites·20 claims
- 0894US10804411B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 13, 2020·6 cites·20 claims
- 0993US2025359086A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1092US10535671B2Cell boundary structure for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 14, 2020·5 cites·20 claims
- 1191US9620372B2HK embodied flash memory and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·6 cites·20 claims
- 1290US9136393B2HK embodied flash memory and methods of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 15, 2015·8 cites·20 claims
- 1389US12446238B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 14, 2025·0 cites·20 claims
- 1486US11640971B2Deep trench capacitor including self-aligned plate contact via structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 2, 2023·2 cites·20 claims
- 1583US12289979B2Deposition system for high accuracy patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 1683US9257571B1Memory gate first approach to forming a split gate flash memory cell deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 9, 2016·6 cites·20 claims
- 1783US2025316663A1Pixel structure for displaysTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1882US9768220B2Deep trench isolation structure for image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 19, 2017·6 cites·20 claims
- 1981US9954100B2Method and apparatus for high voltate transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 24, 2018·3 cites·21 claims
- 2080US2024379373A1High aspect ratio bosch deep etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2179US2025230536A1Deposition system for high accuracy patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2278US12406851B2High aspect ratio bosch deep etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
- 2374US12471431B2Hard mask layer below via structure in display deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 11, 2025·0 cites·20 claims
- 2474US12456677B2Via landing on first and second barrier layers to reduce cleaning time of conductive structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 28, 2025·0 cites·20 claims
- 2574US2023369305A1Pixel structure for displaysTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2673US11296100B2Cell boundary structure for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·0 cites·20 claims
- 2772US9425044B2Composite spacer for silicon nanocrystal memory storageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 23, 2016·2 cites·19 claims
- 2871US11810907B2Pixel structure for displaysTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
- 2971US9356142B2Pattern layout to prevent split gate flash memory cell failureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 31, 2016·2 cites·20 claims
- 3068US11818944B2Deposition system for high accuracy patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 14, 2023·0 cites·20 claims
- 3168US11682692B2Hard mask layer below via structure in display deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 20, 2023·0 cites·20 claims
- 3266US11776901B2Via landing on first and second barrier layers to reduce cleaning time of conductive structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·0 cites·20 claims
- 3362US10461089B2Cell boundary structure for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 29, 2019·0 cites·20 claims
- 3454US9653471B2Pattern layout to prevent split gate flash memory cell failureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 16, 2017·0 cites·20 claims
- 3553US8859441B2Method and system for manufacturing semiconductor deviceHONG MING-HWEI·Filed 2012·Granted Oct 14, 2014·1 cites·6 claims
- 3648US10121805B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 6, 2018·0 cites·20 claims
- 3748US9299927B2Memory cell having resistance variable film and method of making the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 29, 2016·0 cites·21 claims
- 3847US10026741B2Logic-compatible memory cell manufacturing method and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 17, 2018·0 cites·20 claims
- 3947US9287279B2Silicon nitride (SiN) encapsulating layer for silicon nanocrystal memory storageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 15, 2016·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →