Inventor · disambiguated record
Yun-Min Chang
Also filed as: CHANG YUN · CHANG YUN-MIN
18 granted patents·5 pending applications·26 citations·filing 2003–2025
91Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD16TAIWAN SEMICONDUCTOR MFG4GEORGIA TECH RES INST1UNIV CHUNG YUAN CHRISTIAN1UNIV NAT CHIAO TUNG1
Top patents by PatentIndex Score
23 records- 0198US11355637B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·5 cites·20 claims
- 0295US11380794B2Fin field-effect transistor device having contact plugs with re-entrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·3 cites·20 claims
- 0385US12310051B2Fin field-effect transistor device having contact plugs with re-entrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 20, 2025·0 cites·20 claims
- 0485US2025120113A1Field effect transistor device with air gap spacer in source/drain contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0584US2025267889A1Fin field-effect transistor device having contact plugs with re-entrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0683US12211937B2Field effect transistor device with air gap spacer in source/drain contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 0781US10553492B2Selective NFET/PFET recess of source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 4, 2020·2 cites·20 claims
- 0880US11715777B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 1, 2023·1 cites·20 claims
- 0979US11916147B2Fin field-effect transistor device having contact plugs with re-entrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 1077US11735667B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
- 1172US9460957B2Method and structure for nitrogen-doped shallow-trench isolation dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 4, 2016·3 cites·18 claims
- 1270US10510671B2Method for forming semiconductor device structure with conductive lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·1 cites·20 claims
- 1370US7955529B2Synthesis for catalysis of bifunctional perovskite compoundUNIV NAT CHIAO TUNG·Filed 2009·Granted Jun 7, 2011·2 cites·11 claims
- 1468US10879186B1Method for forming semiconductor device structure with conductive lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 29, 2020·0 cites·20 claims
- 1566US2022359693A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1663US11139211B2Selective NFET/PFET recess of source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 5, 2021·0 cites·20 claims
- 1762US10770401B2Method for forming semiconductor device structure with conductive lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 8, 2020·0 cites·20 claims
- 1862US7625498B2Liquid crystal compositeUNIV CHUNG YUAN CHRISTIAN·Filed 2006·Granted Dec 1, 2009·2 cites·11 claims
- 1952US7087483B2Single transistor RAM cell and method of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Aug 8, 2006·4 cites·17 claims
- 2047US7368775B2Single transistor DRAM cell with reduced current leakage and method of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 6, 2008·3 cites·11 claims
- 2147US2022381781A1Methods for ultrasensitive detection of protein and cellular biomarkersGEORGIA TECH RES INST·Filed 2020·Application pending·0 cites
- 2247US2006240624A1Single transistor RAM cell and method of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 2339US7176081B2Low temperature method for metal depositionTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 13, 2007·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →