Inventor · disambiguated record
Yu-Hsia Chen
Also filed as: CHEN YU-HSIA
24 granted patents·3 pending applications·484 citations·filing 2004–2023
96Inventor score
Files withHEADWAY TECHNOLOGIES INC19APPLIED SPINTRONICS INC2ZHANG KUNLIANG2ZHAO TONG2HEADWAY TECH INC1
Top patents by PatentIndex Score
27 records- 0197US7602033B2Low resistance tunneling magnetoresistive sensor with composite inner pinned layerHEADWAY TECHNOLOGIES INC·Filed 2007·Granted Oct 13, 2009·82 cites·20 claims
- 0296US7390529B2Free layer for CPP GMR having iron rich NiFeHEADWAY TECHNOLOGIES INC·Filed 2004·Granted Jun 24, 2008·67 cites·19 claims
- 0396US7331100B2Process of manufacturing a seed/AFM combination for a CPP GMR deviceHEADWAY TECHNOLOGIES INC·Filed 2004·Granted Feb 19, 2008·57 cites·17 claims
- 0495US7333306B2Magnetoresistive spin valve sensor with tri-layer free layerHEADWAY TECHNOLOGIES INC·Filed 2005·Granted Feb 19, 2008·40 cites·34 claims
- 0594US8557407B2Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrierZHAO TONG·Filed 2010·Granted Oct 15, 2013·11 cites·7 claims
- 0694US7780820B2Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrierHEADWAY TECHNOLOGIES INC·Filed 2005·Granted Aug 24, 2010·23 cites·12 claims
- 0793US7672088B2Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applicationsHEADWAY TECHNOLOGIES INC·Filed 2006·Granted Mar 2, 2010·27 cites·12 claims
- 0892US7583481B2FCC-like trilayer AP2 structure for CPP GMR EM improvementHEADWAY TECHNOLOGIES INC·Filed 2005·Granted Sep 1, 2009·22 cites·20 claims
- 0992US6960480B1Method of forming a magnetic tunneling junction (MTJ) MRAM device and a tunneling magnetoresistive (TMR) read headAPPLIED SPINTRONICS INC·Filed 2004·Granted Nov 1, 2005·56 cites·19 claims
- 1091US8337676B2Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrierZHAO TONG·Filed 2010·Granted Dec 25, 2012·8 cites·6 claims
- 1191US7610674B2Method to form a current confining path of a CPP GMR deviceHEADWAY TECHNOLOGIES INC·Filed 2006·Granted Nov 3, 2009·20 cites·5 claims
- 1290US7352543B2Ta based bilayer seed for IrMn CPP spin valveHEADWAY TECHNOLOGIES INC·Filed 2005·Granted Apr 1, 2008·10 cites·12 claims
- 1387US8008740B2Low resistance tunneling magnetoresistive sensor with composite inner pinned layerHEADWAY TECHNOLOGIES INC·Filed 2009·Granted Aug 30, 2011·10 cites·2 claims
- 1485US7872838B2Uniformity in CCP magnetic read head devicesHEADWAY TECHNOLOGIES INC·Filed 2007·Granted Jan 18, 2011·5 cites·13 claims
- 1585US7238979B2Buffer (seed) layer in a high-performance magnetic tunneling junction MRAMAPPLIED SPINTRONICS INC·Filed 2005·Granted Jul 3, 2007·14 cites·19 claims
- 1678US7646568B2Ultra thin seed layer for CPP or TMR structureHEADWAY TECHNOLOGIES INC·Filed 2005·Granted Jan 12, 2010·9 cites·16 claims
- 1776US7918014B2Method of manufacturing a CPP structure with enhanced GMR ratioHEADWAY TECHNOLOGIES INC·Filed 2005·Granted Apr 5, 2011·6 cites·7 claims
- 1875US8012316B2FCC-like trilayer AP2 structure for CPP GMR EM improvementHEADWAY TECHNOLOGIES INC·Filed 2009·Granted Sep 6, 2011·4 cites·9 claims
- 1975US7355823B2Ta based bilayer seed for IrMn CPP spin valveHEADWAY TECHNOLOGIES INC·Filed 2005·Granted Apr 8, 2008·7 cites·5 claims
- 2072US7990660B2Multiple CCP layers in magnetic read head devicesHEADWAY TECHNOLOGIES INC·Filed 2011·Granted Aug 2, 2011·2 cites·7 claims
- 2171US7978440B2Seed/AFM combination for CCP GMR deviceHEADWAY TECHNOLOGIES INC·Filed 2008·Granted Jul 12, 2011·1 cites·13 claims
- 2262US8484830B2Method of manufacturing a CPP structure with enhanced GMR ratioZHANG KUNLIANG·Filed 2011·Granted Jul 16, 2013·1 cites·9 claims
- 2355US7288281B2CPP spin valve with ultra-thin CoFe(50%) laminationsHEADWAY TECHNOLOGIES INC·Filed 2004·Granted Oct 30, 2007·2 cites·18 claims
- 2451US8289661B2CPP structure with enhanced GMR ratioZHANG KUNLIANG·Filed 2011·Granted Oct 16, 2012·0 cites·20 claims
- 2551US2010037453A1Current confining layer for GMR deviceHEADWAY TECHNOLOGIES INC·Filed 2009·Application pending·0 cites
- 2645US2024312483A1Self-Aligned Side Gap Insulator For A Perpendicular Magnetic Recording WriterHEADWAY TECH INC·Filed 2023·Application pending·0 cites
- 2742US2007080381A1Robust protective layer for MTJ devicesMAGIC TECHNOLOGIES INC·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →