Inventor · disambiguated record
Yu-Hung Cheng
Also filed as: CHENG YU H · CHENG YU-HUNG
78 granted patents·25 pending applications·294 citations·filing 1995–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD84CHENG YU-HUNG7TAIWAN SEMICONDUCTOR MFG6MOXA TECHNOLOGIES CO LTD2IND TECH RES INST1
Top patents by PatentIndex Score
103 records- 0196US9899441B1Deep trench isolation (DTI) structure with a tri-layer passivation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·17 cites·20 claims
- 0296US9142643B2Method for forming epitaxial featureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 22, 2015·25 cites·20 claims
- 0395US11495489B2Method for forming a semiconductor-on-insulator (SOI) substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·3 cites·20 claims
- 0495US10658410B2Image sensor having improved full well capacity and related method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·9 cites·20 claims
- 0595US10395974B1Method for forming a thin semiconductor-on-insulator (SOI) substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 27, 2019·11 cites·20 claims
- 0694US11869761B2Back-side deep trench isolation structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 9, 2024·3 cites·20 claims
- 0794US10553474B1Method for forming a semiconductor-on-insulator (SOI) substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 4, 2020·6 cites·20 claims
- 0893US11545513B2Image sensor having improved full well capacity and related method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 3, 2023·2 cites·20 claims
- 0993US10569520B2Wafer debonding system and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 25, 2020·7 cites·20 claims
- 1093US9978650B2Transistor channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 22, 2018·9 cites·19 claims
- 1193US8946060B2Methods of manufacturing strained semiconductor devices with facetsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 3, 2015·12 cites·20 claims
- 1292US10147756B2Deep trench isolation structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 4, 2018·7 cites·20 claims
- 1392US9799702B2Deep trench isolation structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 24, 2017·8 cites·20 claims
- 1492US8455930B2Strained semiconductor device with facetsCHENG YU-HUNG·Filed 2011·Granted Jun 4, 2013·12 cites·20 claims
- 1592US8377784B2Method for fabricating a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 19, 2013·12 cites·19 claims
- 1691US10147609B2Semiconductor epitaxy bordering isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 4, 2018·5 cites·20 claims
- 1790US11817469B2Light absorbing layer to enhance P-type diffusion for DTI in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·2 cites·20 claims
- 1890US10453757B2Transistor channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 22, 2019·5 cites·15 claims
- 1990US10155369B2Wafer debonding system and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·5 cites·7 claims
- 2090US9905600B1Image sensor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 27, 2018·7 cites·20 claims
- 2190US9653574B2Selective etching in the formation of epitaxy regions in MOS devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 16, 2017·5 cites·20 claims
- 2290US9263339B2Selective etching in the formation of epitaxy regions in MOS devicesCHENG YU-HUNG·Filed 2010·Granted Feb 16, 2016·10 cites·22 claims
- 2390US8828850B2Reducing variation by using combination epitaxy growthCHENG YU-HUNG·Filed 2011·Granted Sep 9, 2014·9 cites·22 claims
- 2489US11855159B2Method for forming thin semiconductor-on-insulator (SOI) substratesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
- 2588US10889097B2Wafer debonding system and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 12, 2021·3 cites·20 claims
- 2688US10109756B2Backside illuminated photo-sensitive device with gradated buffer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 23, 2018·3 cites·20 claims
- 2788US5553795AInertial impactor with a specially designed impaction plateNAT SCIENCE COUNCIL REPUBLIC CHINA·Filed 1995·Granted Sep 10, 1996·41 cites·2 claims
- 2887US10522353B2Semiconductor epitaxy bordering isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·3 cites·20 claims
- 2987US8835267B2Semiconductor device and fabrication method thereofLEE YEN-RU·Filed 2011·Granted Sep 16, 2014·9 cites·20 claims
- 3087US2025364315A1Multilayer isolation structure for high voltage silicon-on-insulator deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3186US10756222B2Backside illuminated photo-sensitive device with gradated buffer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·1 cites·19 claims
- 3286US9064688B2Performing enhanced cleaning in the formation of MOS devicesCHENG YU-HUNG·Filed 2012·Granted Jun 23, 2015·8 cites·20 claims
- 3386US8530316B2Method for fabricating a semiconductor deviceCHENG YU-HUNG·Filed 2013·Granted Sep 10, 2013·6 cites·20 claims
- 3485US10957540B2Semiconductor epitaxy bordering isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 23, 2021·2 cites·20 claims
- 3584US12165911B2Method for forming a semiconductor-on-insulator (SOI) substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 3682US11594597B2Selective polysilicon growth for deep trench polysilicon isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 28, 2023·2 cites·20 claims
- 3782US2025338657A1Deep trench isolation structure for image sensor narrowed by epitaxy growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3882US2025331323A1Passivation for a vertical transfer gate in a pixel sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3981US10971534B2Image sensor having improved full well capacity and related method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 6, 2021·1 cites·20 claims
- 4081US10923503B2Semiconductor-on-insulator (SOI) substrate comprising a trap-rich layer with small grain sizesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 16, 2021·3 cites·20 claims
- 4181US2025366243A1Pre-cleaning for a deep trench isolation structure in a pixel sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4280US11830764B2Method for forming a semiconductor-on-insulator (SOI) substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
- 4380US2025359384A1Passivation for a deep trench isolation structure in a pixel sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4479US10516040B2Method of forming epitaxial silicon layer and semiconductor device thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·2 cites·20 claims
- 4579US9425287B2Reducing variation by using combination epitaxy growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 23, 2016·3 cites·19 claims
- 4679US2024379684A1Selective polysilicon growth for deep trench polysilicon isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4778US2024347377A1Fabrication method of metal-free soi waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4878US2024379713A1Back-side deep trench isolation structure for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4978US2024371902A1Isolation epitaxial bi-layer for backside deep trench isolation structure in an image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5077US9887235B2Pixel isolation device and fabrication methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 6, 2018·2 cites·20 claims
Showing the top 50 of 103 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →