Inventor · disambiguated record
Yu-San Chien
Also filed as: CHIEN YU-SAN
9 granted patents·6 pending applications·1 citations·filing 2019–2025
78Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD15
Top patents by PatentIndex Score
15 records- 0194US12087844B2Semiconductor device structure with uniform threshold voltage distribution and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 10, 2024·1 cites·20 claims
- 0284US2025294871A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0382US2024363731A1Semiconductor Device Structure With Uniform Threshold Voltage Distribution and Method of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0480US12324235B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 0576US11799017B2Semiconductor device structure with uniform threshold voltage distribution and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·0 cites·20 claims
- 0676US11756962B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·0 cites·20 claims
- 0770US11374006B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·0 cites·20 claims
- 0870US11282942B2Semiconductor device structure with uniform threshold voltage distribution and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·0 cites·20 claims
- 0968US11837602B2Semiconductor device structure having a plurality of threshold voltages and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 5, 2023·0 cites·20 claims
- 1060US11018257B2Semiconductor device structure having a plurality of threshold voltages and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·0 cites·20 claims
- 1154US2024063293A1Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1253US11133224B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 28, 2021·0 cites·20 claims
- 1352US2024178128A1Semiconductor device structure including forksheet transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1451US2024371873A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1547US2024128267A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →