Inventor · disambiguated record
Yu-Chung Chin
Also filed as: CHIN YU-CHUNG
20 granted patents·13 pending applications·14 citations·filing 2004–2025
89Inventor score
Top patents by PatentIndex Score
33 records- 0174US11862938B2Semiconductor laser diodeVISUAL PHOTONICS EPITAXY CO LTD·Filed 2020·Granted Jan 2, 2024·1 cites·18 claims
- 0274US10651298B2Heterojunction bipolar transistor structure with a bandgap graded hole barrier layerVISUAL PHOTONICS EPITAXY CO LTD·Filed 2018·Granted May 12, 2020·2 cites·14 claims
- 0373US12295152B2High ruggedness heterojunction bipolar transistor (HBT)VISUAL PHOTONICS EPITAXY CO LTD·Filed 2024·Granted May 6, 2025·0 cites·19 claims
- 0471US7385236B2BiFET semiconductor device having vertically integrated FET and HBTVISUAL PHOTONICS EPITAXY CO LT·Filed 2005·Granted Jun 10, 2008·5 cites·19 claims
- 0567US12424822B2Semiconductor laser diode including multiple active layers and a grating layerVISUAL PHOTONICS EPITAXY CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·11 claims
- 0667US8994069B2BiHEMT device having a stacked separating layerVISUAL PHOTONICS EPITAXY CO LTD·Filed 2013·Granted Mar 31, 2015·2 cites·12 claims
- 0767US7573080B1Transient suppression semiconductor deviceVISUAL PHOTONICS EPITAXY CO LT·Filed 2008·Granted Aug 11, 2009·4 cites·7 claims
- 0866US2023307527A1Heterojunction bipolar transistorVISUAL PHOTONICS EPITAXY CO LTD·Filed 2023·Application pending·0 cites
- 0964US11929427B2High ruggedness heterojunction bipolar transistor (HBT)VISUAL PHOTONICS EPITAXY CO LTD·Filed 2021·Granted Mar 12, 2024·0 cites·13 claims
- 1063US2025055257A1Vertical cavity surface emitting laser diode (vcsel) with current confinement layer with phosphorus contentVISUAL PHOTONICS EPITAXY CO LTD·Filed 2024·Application pending·0 cites
- 1162US2024030685A1Semiconductor laser diodeVISUAL PHOTONICS EPITAXY CO LTD·Filed 2023·Application pending·0 cites
- 1260US2025174966A1Vertical cavity surface emitting laser diode (vcsel) with tunnel junctionVISUAL PHOTONICS EPITAXY CO LTD·Filed 2025·Application pending·0 cites
- 1358US12424824B2Vertical-cavity surface-emitting semiconductor laser diode with the mode filterVISUAL PHOTONICS EPITAXY CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·10 claims
- 1458US2023396040A1Semiconductor laser epitaxial structureVISUAL PHOTONICS EPITAXY CO LTD·Filed 2023·Application pending·0 cites
- 1557US2023307889A1Vertical cavity surface-emitting laser epitaxial structure having a current spreading layerVISUAL PHOTONICS EPITAXY CO LTD·Filed 2023·Application pending·0 cites
- 1657US2021226045A1Heterojunction bipolar transistorVISUAL PHOTONICS EPITAXY CO LTD·Filed 2021·Application pending·0 cites
- 1756US12316076B2Vertical cavity surface emitting laser diode (VCSEL) with tunnel junctionVISUAL PHOTONICS EPITAXY CO LTD·Filed 2020·Granted May 27, 2025·0 cites·7 claims
- 1855US11799011B2Semiconductor epitaxial waferVISUAL PHOTONICS EPITAXY CO LTD·Filed 2022·Granted Oct 24, 2023·0 cites·11 claims
- 1955US2023121340A1Vertical cavity surface emitting laser diode (vcsel) with small divergence angleVISUAL PHOTONICS EPITAXY CO LTD·Filed 2022·Application pending·0 cites
- 2054US2024079450A1Heterojunction bipolar transistor structure having current clamping layerVISUAL PHOTONICS EPITAXY CO LTD·Filed 2023·Application pending·0 cites
- 2153US11721954B2Vertical cavity surface emitting laser diode (VCSEL) having AlGaAsP layer with compressive strainVISUAL PHOTONICS EPITAXY CO LTD·Filed 2020·Granted Aug 8, 2023·0 cites·19 claims
- 2252US11482830B2Measurement method of reflection spectrum of vertical cavity surface emitting laser diode (VCSEL) and epitaxial wafer test fixtureVISUAL PHOTONICS EPITAXY CO LTD·Filed 2020·Granted Oct 25, 2022·0 cites·15 claims
- 2351US9130027B2High electron mobility bipolar transistorVISUAL PHOTONICS EPITAXY CO LTD·Filed 2014·Granted Sep 8, 2015·0 cites·8 claims
- 2450US2021091537A1High-power vertical cavity surface emitting laser diode (vcsel)VISUAL PHOTONICS EPITAXY CO LTD·Filed 2020·Application pending·0 cites
- 2550US2020403379A1Vertical cavity surface emitting laser diode (vcsel) with multiple current confinement layersVISUAL PHOTONICS EPITAXY CO LTD·Filed 2020·Application pending·0 cites
- 2649US11158995B2Laser diode with defect blocking layerVISUAL PHOTONICS EPITAXY CO LTD·Filed 2019·Granted Oct 26, 2021·0 cites·10 claims
- 2747US10818781B2Heterojunction bipolar transistor structure with a bandgap graded hole barrier layerVISUAL PHOTONICS EPITAXY CO LTD·Filed 2020·Granted Oct 27, 2020·0 cites·20 claims
- 2847US9853136B2Directed epitaxial heterojunction bipolar transistorVISUAL PHOTONICS EPITAXY CO LTD·Filed 2014·Granted Dec 26, 2017·0 cites·22 claims
- 2945US11133405B2High ruggedness heterojunction bipolar transistorVISUAL PHOTONICS EPITAXY CO LTD·Filed 2020·Granted Sep 28, 2021·0 cites·20 claims
- 3041US11049936B2High ruggedness heterojunction bipolar transistor structureVISUAL PHOTONICS EPITAXY CO LTD·Filed 2019·Granted Jun 29, 2021·0 cites·19 claims
- 3133US2012068228A1HETEROJUNCTION BIOPLAR TRANSISTOR STRUCTURE WITH GaPSbAs BASECHIN YU-CHUNG·Filed 2010·Application pending·0 cites
- 3231US7224005B2Heterojunction bipolar transistor structureVISUAL PHOTONICS EPITAXY CO LT·Filed 2004·Granted May 29, 2007·0 cites·14 claims
- 3326US2016049502A1Heterojunction bipolar transistor with blocking layer structureVISUAL PHOTONICS EPITAXY CO LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →