Inventor · disambiguated record
Yu-Chien Chiu
Also filed as: CHIU YU-CHIEN
9 granted patents·9 pending applications·38 citations·filing 2016–2025
81Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD13UNIV NAT TAIWAN NORMAL3PHISON ELECTRONICS CORP1UNIV NAT CHIAO TUNG1
Top patents by PatentIndex Score
18 records- 0196US9837435B1Three-dimensional non-volatile memory structure and manufacturing method thereofPHISON ELECTRONICS CORP·Filed 2017·Granted Dec 5, 2017·31 cites·20 claims
- 0289US9871112B1Semiconductor device and method of manufacturing the sameUNIV NAT TAIWAN NORMAL·Filed 2017·Granted Jan 16, 2018·7 cites·6 claims
- 0383US2025351366A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0481US2024389338A1Three-dimensional memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0578US12310029B2Semiconductor memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 20, 2025·0 cites·20 claims
- 0676US12250822B2Three-dimensional memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 11, 2025·0 cites·20 claims
- 0775US2025318139A1Ferroelectric device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0872US2025151283A1Semiconductor memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0970US11716857B2Semiconductor memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·0 cites·20 claims
- 1069US12349363B2Ferroelectric device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
- 1162US2023413571A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1261US12324194B2Source/drain engineering for ferroelectric field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 3, 2025·0 cites·21 claims
- 1357US2025098187A1Semiconductor memory cell structure including a hydrogen absorption layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1450US2024113234A1Transistor device with multi-layer channel structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1549US11723209B2Three-dimensional memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 1636US2018166448A1Strained-gate Engineered Dynamic Random Access Memory Including Ferroelectric Negative Capacitance Dielectrics And Manufacturing Method ThereofUNIV NAT TAIWAN NORMAL·Filed 2017·Application pending·0 cites
- 1735US10515980B2Flash memory structure and method of manufacturing the sameUNIV NAT TAIWAN NORMAL·Filed 2017·Granted Dec 24, 2019·0 cites·13 claims
- 1834US2016308070A1Semiconductor deviceUNIV NAT CHIAO TUNG·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →