Inventor · disambiguated record
Yu-Teng Dai
Also filed as: DAI YU-TENG
31 granted patents·24 pending applications·19 citations·filing 2020–2025
94Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD55
Top patents by PatentIndex Score
55 records- 0197US11302641B2Self-aligned cavity strucutreTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·4 cites·20 claims
- 0296US12424488B2Dual etch-stop layer structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 23, 2025·2 cites·20 claims
- 0396US11798910B2Self-aligned interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·2 cites·20 claims
- 0495US11942364B2Selective deposition of a protective layer to reduce interconnect structure critical dimensionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·2 cites·20 claims
- 0595US11362030B2Sidewall spacer structure enclosing conductive wire sidewalls to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·3 cites·20 claims
- 0691US11854965B2Sidewall spacer structure enclosing conductive wire sidewalls to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
- 0791US2025364401A1Sidewall spacer structure enclosing conductive wire sidewalls to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0890US11521896B2Selective deposition of a protective layer to reduce interconnect structure critical dimensionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·2 cites·20 claims
- 0989US11805658B2Magnetic random access memory and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 31, 2023·1 cites·20 claims
- 1086US2025349608A1Dual etch-stop layer structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1185US11798840B2Self-assembled dielectric on metal RIE lines to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·1 cites·18 claims
- 1285US11569127B2Double patterning approach by direct metal etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·1 cites·20 claims
- 1385US2025081470A1Magnetic random access memory and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1484US2025329638A1Interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1583US2025316532A1Self-assembled dielectric on metal rie lines to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1683US2025266387A1Self-aligned interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1782US12322723B2Self-aligned interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 1882US12178051B2Magnetic random access memory and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 1981US12362231B2Self-assembled dielectric on metal rie lines to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 2080US12315817B2Dielectric on wire structure to increase processing window for overlying viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 2180US2024088022A1Sidewall spacer structure enclosing conductive wire sidewalls to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2279US12125795B2Integrated chip with inter-wire cavitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 2379US2024371779A1Integrated chip with inter-wire cavitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2479US2025259932A1Dielectric on wire structure to increase processing window for overlying viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2578US12406924B2Interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 2, 2025·0 cites·18 claims
- 2678US12243775B2Double patterning approach by direct metal etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 2775US2025191973A1Double patterning approach by direct metal etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2875US2025191971A1Integrated chip with cavity structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2975US2024387383A1Interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3075US2024371770A1Interconnect conductive structure comprising two conductive materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3174US12266565B2Integrated chip with an etch-stop layer forming a cavityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 3274US2024194523A1Selective deposition of a protective layer to reduce interconnect structure critical dimensionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3374US2024282623A1Semiconductor device structure having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3472US11837546B2Self-aligned cavity strucutreTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 5, 2023·0 cites·20 claims
- 3572US2025273515A1Semiconductor device structure with carbon-containing conductive structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3672US2024145380A1Barrier structure on interconnect wire to increase processing window for overlying viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3771US11652054B2Dielectric on wire structure to increase processing window for overlying viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 16, 2023·0 cites·20 claims
- 3870US12300541B2Structure and formation method of semiconductor device with carbon-containing conductive structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 3970US11842924B2Dual etch-stop layer structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·0 cites·20 claims
- 4070US11488926B2Self-aligned interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·0 cites·20 claims
- 4169US11972975B2Semiconductor device structure having air gap and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 30, 2024·0 cites·20 claims
- 4269US11842966B2Integrated chip with inter-wire cavitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·0 cites·20 claims
- 4369US11756884B2Interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·0 cites·20 claims
- 4468US12094823B2Interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 17, 2024·0 cites·20 claims
- 4567US11923293B2Barrier structure on interconnect wire to increase processing window for overlying viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·20 claims
- 4667US11688782B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·0 cites·20 claims
- 4767US11482447B2Method of forming an integrated chip having a cavity between metal featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 25, 2022·0 cites·20 claims
- 4864US12300611B2Interconnect conductive structure comprising two conductive materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 13, 2025·0 cites·20 claims
- 4958US2025125189A1Interconnect structure with reinforcing spacer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 5058US2025133800A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
Showing the top 50 of 55 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →