Inventor · disambiguated record
Yuuki Enatsu
Also filed as: ENATSU YUUKI
10 granted patents·4 pending applications·4 citations·filing 2014–2025
80Inventor score
Top patents by PatentIndex Score
14 records- 0195US11987903B2N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production methodMITSUBISHI CHEM CORP·Filed 2021·Granted May 21, 2024·3 cites·19 claims
- 0294US12351943B2n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production methodMITSUBISHI CHEM CORP·Filed 2024·Granted Jul 8, 2025·1 cites·23 claims
- 0381US2025290228A1n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRIDE SEMICONDUCTOR DEVICE PRODUCTION METHODMITSUBISHI CHEM CORP·Filed 2025·Application pending·0 cites
- 0471US2024282921A1Particles and method for producing same, and secondary battery and method for manufacturing sameMITSUBISHI CHEM CORP·Filed 2024·Application pending·0 cites
- 0562US12476108B2GaN substrate wafer and production method for sameMITSUBISHI CHEM CORP·Filed 2021·Granted Nov 18, 2025·0 cites·24 claims
- 0660US10570530B2Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystalsMITSUBISHI CHEM CORP·Filed 2018·Granted Feb 25, 2020·0 cites·18 claims
- 0759US12288686B2GaN substrate wafer and method for manufacturing sameMITSUBISHI CHEM CORP·Filed 2021·Granted Apr 29, 2025·0 cites·33 claims
- 0859US10023976B2Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystalsMITSUBISHI CHEM CORP·Filed 2017·Granted Jul 17, 2018·0 cites·20 claims
- 0958US9840791B2Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystalsMITSUBISHI CHEM CORP·Filed 2014·Granted Dec 12, 2017·0 cites·17 claims
- 1054US2023203711A1Gan crystal and gan substrateMITSUBISHI CHEM CORP·Filed 2023·Application pending·0 cites
- 1150US10224201B2C-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2017·Granted Mar 5, 2019·0 cites·20 claims
- 1249US2021384336A1Gan crystal and substrateMITSUBISHI CHEM CORP·Filed 2021·Application pending·0 cites
- 1343US10177217B2C-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2017·Granted Jan 8, 2019·0 cites·22 claims
- 1438US11588096B2Method to achieve active p-type layer/layers in III-nitrtde epitaxial or device structures having buried p-type layersUNIV CALIFORNIA·Filed 2017·Granted Feb 21, 2023·0 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →