Inventor · disambiguated record

Yuefeng Gong

Also filed as: GONG YUEFENG

2 granted patents·2 citations·filing 2012–2012

35Inventor score

Technology areasH01L

Files withSHANGHAI INST MICROSYS & INF2

Top patents by PatentIndex Score

2 records

0168US9276202B2Phase-change storage unit containing TiSiN material layer and method for preparing the sameSHANGHAI INST MICROSYS & INF·Filed 2012·Granted Mar 1, 2016·2 cites·12 claims
0232US9362493B2Phase-change storage unit for replacing DRAM and FLASH and manufacturing method thereofSHANGHAI INST MICROSYS & INF·Filed 2012·Granted Jun 7, 2016·0 cites·6 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →