Inventor · disambiguated record
Yuhui Han
Also filed as: HAN YUHUI
6 granted patents·9 pending applications·0 citations·filing 2019–2025
65Inventor score
Files withYANGTZE MEMORY TECH CO LTD15
Top patents by PatentIndex Score
15 records- 0175US2025248032A1Three-dimensional memory and manufacturing method thereofYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0271US2024203908A1Vertical memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0369US12302558B2Three-dimensional memory and manufacturing method thereofYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted May 13, 2025·0 cites·20 claims
- 0465US2025331179A1Semiconductor device, fabrication method and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0564US11948894B2Vertical memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Apr 2, 2024·0 cites·8 claims
- 0664US2025301653A1Systems, devices, and methods for managing select gates in semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0764US2025338496A1Semiconductor device, fabrication method thereof and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0862US2025300098A1Managing protection structures in semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0961US2025379151A1Semiconductor devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1059US12137562B2Method of forming vertical memory devices with improved dummy channel structuresYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Nov 5, 2024·0 cites·16 claims
- 1157US2024389307A1Fabrication method of semiconductor device, semiconductor device and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1253US2024188292A1Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 1351US11665899B2Vertical memory devices with high density dummy channel structureYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted May 30, 2023·0 cites·10 claims
- 1451US11309323B2Three-dimensional memory devices with drain select gate cut and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Apr 19, 2022·0 cites·20 claims
- 1550US12058865B2Three-dimensional memory devices with support structures and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Aug 6, 2024·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →