Inventor · disambiguated record
Yu-Pin Han
Also filed as: HAN YU P · HAN YU-PIN
27 granted patents·1,109 citations·filing 1982–1999
98Inventor score
Files withVLSI TECHNOLOGY INC12SGS THOMSON MICROELECTRONICS8ST MICROELECTRONICS INC3MOSTEK CORP2KONINKL PHILIPS ELECTRONICS NV1
Top patents by PatentIndex Score
27 records- 0192US5444008AHigh-performance punchthrough implant method for MOS/VLSIVLSI TECHNOLOGY INC·Filed 1993·Granted Aug 22, 1995·115 cites·11 claims
- 0292US4962414AMethod for forming a contact VIASGS THOMSON MICROELECTRONICS·Filed 1989·Granted Oct 9, 1990·103 cites·2 claims
- 0392US4868138AMethod for forming a self-aligned source/drain contact for an MOS transistorSGS THOMSON MICROELECTRONICS·Filed 1988·Granted Sep 19, 1989·74 cites·13 claims
- 0487US4771014AProcess for manufacturing LDD CMOS devicesSGS THOMSON MICROELECTRONICS·Filed 1987·Granted Sep 13, 1988·52 cites·5 claims
- 0587US4599118AMethod of making MOSFET by multiple implantations followed by a diffusion stepMOSTEK CORP·Filed 1984·Granted Jul 8, 1986·65 cites·2 claims
- 0682US5821558AAntifuse structuresVLSI TECHNOLOGY INC·Filed 1997·Granted Oct 13, 1998·41 cites·24 claims
- 0781US4407696AFabrication of isolation oxidation for MOS circuitMOSTEK CORP·Filed 1982·Granted Oct 4, 1983·52 cites·5 claims
- 0880US5789795AMethods and apparatus for fabricationg anti-fuse devicesVLSI TECHNOLOGY INC·Filed 1995·Granted Aug 4, 1998·68 cites·13 claims
- 0980US5395773AMOSFET with gate-penetrating halo implantVLSI TECHNOLOGY INC·Filed 1994·Granted Mar 7, 1995·56 cites·5 claims
- 1077US5409848AAngled lateral pocket implants on p-type semiconductor devicesVLSI TECHNOLOGY INC·Filed 1994·Granted Apr 25, 1995·65 cites·20 claims
- 1176US5801396AInverted field-effect device with polycrystalline silicon/germanium channelST MICROELECTRONICS INC·Filed 1995·Granted Sep 1, 1998·34 cites·22 claims
- 1275US5793640ACapacitance measurement using an RLC circuit modelVLSI TECHNOLOGY INC·Filed 1996·Granted Aug 11, 1998·39 cites·4 claims
- 1374US5371041AMethod for forming a contact/VIASGS THOMSON MICROELECTRONICS·Filed 1992·Granted Dec 6, 1994·45 cites·10 claims
- 1472US5135888AField effect device with polycrystalline silicon channelSGS THOMSON MICROELECTRONICS·Filed 1990·Granted Aug 4, 1992·33 cites·10 claims
- 1571US5770892AField effect device with polycrystalline silicon channelSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Jun 23, 1998·33 cites·6 claims
- 1671US5344787ALatid implants for increasing the effective width of transistor elements in a semiconductor deviceVLSI TECHNOLOGY INC·Filed 1993·Granted Sep 6, 1994·49 cites·8 claims
- 1767US5773317ATest structure and method for determining metal-oxide-silicon field effect transistor fringing capacitanceVLSI TECHNOLOGY INC·Filed 1995·Granted Jun 30, 1998·34 cites·18 claims
- 1866US4679300AMethod of making a trench capacitor and dram memory cellTHOMSON COMPONENTS MOSTEK CORP·Filed 1985·Granted Jul 14, 1987·23 cites·6 claims
- 1962US5821136AInverted field-effect device with polycrystalline silicon/germanium channelST MICROELECTRONICS INC·Filed 1996·Granted Oct 13, 1998·18 cites·24 claims
- 2058US6429144B1Integrated circuit manufacture method with aqueous hydrogen fluoride and nitric acid oxide etchKONINKL PHILIPS ELECTRONICS NV·Filed 1999·Granted Aug 6, 2002·17 cites·13 claims
- 2155US4981813APad oxide protect sealed interface isolation processSGS THOMSON MICROELECTRONICS·Filed 1988·Granted Jan 1, 1991·20 cites·2 claims
- 2254US5793094AMethods for fabricating anti-fuse structuresVLSI TECHNOLOGY INC·Filed 1995·Granted Aug 11, 1998·22 cites·21 claims
- 2347US5847465AContacts for semiconductor devicesST MICROELECTRONICS INC·Filed 1995·Granted Dec 8, 1998·13 cites·10 claims
- 2446US5256895APad oxide protect sealed interface isolationSGS THOMSON MICROELECTRONICS·Filed 1992·Granted Oct 26, 1993·15 cites·6 claims
- 2545US5783467AMethod of making antifuse structures using implantation of both neutral and dopant speciesVLSI TECHNOLOGY INC·Filed 1995·Granted Jul 21, 1998·7 cites·19 claims
- 2642US6007641AIntegrated-circuit manufacture method with aqueous hydrogen-fluoride and nitric-acid oxide etchVLSI TECHNOLOGY INC·Filed 1997·Granted Dec 28, 1999·9 cites·7 claims
- 2737US5753540AApparatus and method for programming antifuse structuresVLSI TECHNOLOGY INC·Filed 1996·Granted May 19, 1998·7 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →