Inventor · disambiguated record
Yung-Lung Hsu
Also filed as: HSU YUNG-LUNG
78 granted patents·3 pending applications·303 citations·filing 1998–2022
99Inventor score
Top patents by PatentIndex Score
81 records- 0196US9799697B2Back side illuminated image sensor with deep trench isolation structures and self-aligned color filtersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 24, 2017·13 cites·18 claims
- 0294US10181491B2Semiconductor image sensor device having back side illuminated image sensors with embedded color filtersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 15, 2019·6 cites·20 claims
- 0394US9570493B2Dielectric grid bottom profile for light focusingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·12 cites·17 claims
- 0494US9281338B2Semiconductor image sensor device having back side illuminated image sensors with embedded color filtersTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 8, 2016·10 cites·20 claims
- 0593US9543353B2Formation of buried color filters in a back side illuminated image sensor with an ONO-like structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 10, 2017·6 cites·20 claims
- 0692US10818719B2Semiconductor device with a radiation sensing region and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 27, 2020·2 cites·20 claims
- 0792US9786704B2CMOS image sensor structure with crosstalk improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 10, 2017·9 cites·20 claims
- 0892US9525001B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 20, 2016·9 cites·20 claims
- 0992US9368531B2Formation of buried color filters in a back side illuminated image sensor with an ono-like structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 14, 2016·9 cites·20 claims
- 1091US9847363B2Semiconductor device with a radiation sensing region and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 19, 2017·5 cites·20 claims
- 1191US9553118B2Formation of buried color filters in a back side illuminated image sensor using an etching-stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 24, 2017·7 cites·20 claims
- 1290US11430733B2Method of testing waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·2 cites·20 claims
- 1390US10770502B2Semiconductor image sensor device having back side illuminated image sensors with embedded color filtersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 8, 2020·3 cites·20 claims
- 1490US10475839B2Semiconductor device with a radiation sensing region and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 12, 2019·4 cites·20 claims
- 1589US9991307B2Stacked grid design for improved optical performance and isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 5, 2018·5 cites·20 claims
- 1688US10269684B2Semiconductor structure and manufacuting method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·4 cites·20 claims
- 1788US9893107B2Semiconductor device with reduced leakage current and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 13, 2018·6 cites·20 claims
- 1888US9825085B2Formation of buried color filters in a back side illuminated image sensor using an etching-stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 21, 2017·5 cites·20 claims
- 1988US9812488B2Backside illuminated image sensor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 7, 2017·6 cites·20 claims
- 2088US9786710B2Image sensor device with sub-isolation in pixelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 10, 2017·7 cites·18 claims
- 2187US10276617B2Protection ring for image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·3 cites·20 claims
- 2287US10163641B2Memory with a raised dummy feature surrounding a cell regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·5 cites·20 claims
- 2385US10490590B2Semiconductor image sensor device having back side illuminated image sensors with embedded color filtersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 26, 2019·2 cites·20 claims
- 2485US9385156B2Method of manufacturing a back side illuminated (BSI) image sensorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 5, 2016·3 cites·18 claims
- 2584US11018179B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 25, 2021·1 cites·20 claims
- 2684US10818595B2Semiconductor structure, testing and fabricating methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 27, 2020·3 cites·15 claims
- 2784US9613916B2Protection ring for image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 4, 2017·3 cites·20 claims
- 2883US9548329B2Backside illuminated image sensor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 17, 2017·6 cites·20 claims
- 2983US9461089B2Method of fabricating semiconductor image sensor device having back side illuminated image sensors with embedded color filtersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 4, 2016·2 cites·20 claims
- 3082US9559135B2Conduction layer for stacked CIS charging preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 31, 2017·4 cites·20 claims
- 3181US9806116B2Complementary metal grid and deep trench isolation in CIS applicationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 31, 2017·3 cites·20 claims
- 3278US10950645B2Semiconductor device with a radiation sensing region and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·0 cites·20 claims
- 3377US11735618B2Stacked grid design for improved optical performance and isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 3476US12009302B2Method of testing waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 3576US11728365B2Semiconductor device with a radiation sensing region and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 3676US11121168B2Stacked grid design for improved optical performance and isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·0 cites·20 claims
- 3776US10204956B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 12, 2019·1 cites·20 claims
- 3876US9786716B2Method of fabricating semiconductor image sensor device having back side illuminated image sensors with embedded color filtersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 10, 2017·1 cites·20 claims
- 3976US9711560B2CMOS image sensor structure with IR/NIR integrationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 18, 2017·2 cites·20 claims
- 4075US11355545B2Semiconductor image sensor device having back side illuminated image sensors with embedded color filtersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·0 cites·20 claims
- 4175US9728573B2Backside illuminated image sensor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·2 cites·20 claims
- 4275US9659985B2Integrated circuit and image sensing device having metal shielding layer and related fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·2 cites·18 claims
- 4374US11195867B2High dielectric constant dielectric layer forming method, image sensor device, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 7, 2021·0 cites·20 claims
- 4474US10163966B2Image sensing device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 25, 2018·2 cites·20 claims
- 4574US6271068B1Method for making improved polysilicon emitters for bipolar transistors on BiCMOS integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 7, 2001·21 cites·17 claims
- 4673US9832399B2Image sensor and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 28, 2017·2 cites·20 claims
- 4773US6340833B1Integrated circuit polysilicon resistor having a silicide extension to achieve 100 % metal shielding from hydrogen intrusionTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jan 22, 2002·16 cites·7 claims
- 4872US10686005B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 16, 2020·0 cites·20 claims
- 4972US9947759B1Semiconductor device having milti-height structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 17, 2018·2 cites·20 claims
- 5072US6165861AIntegrated circuit polysilicon resistor having a silicide extension to achieve 100% metal shielding from hydrogen intrusionTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Dec 26, 2000·29 cites·20 claims
Showing the top 50 of 81 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →