Inventor · disambiguated record
Yuan-Sheng Huang
Also filed as: HUANG YUAN-SHENG
37 granted patents·13 pending applications·153 citations·filing 2001–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD42TAIWAN SEMICONDUCTOR MFG3HUANG YUAN-SHENG2ASIA OPTICAL CO INC1HSIEH TZU-YEN1
Top patents by PatentIndex Score
50 records- 0197US11404321B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·4 cites·20 claims
- 0297US9536980B1Gate spacers and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·44 cites·20 claims
- 0396US11804548B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·2 cites·20 claims
- 0496US11545543B2Trench pattern for trench capacitor yield improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 3, 2023·3 cites·20 claims
- 0596US11302816B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·3 cites·20 claims
- 0695US8507979B1Semiconductor integrated circuit with metal gateHUANG YUAN-SHENG·Filed 2012·Granted Aug 13, 2013·50 cites·20 claims
- 0794US11855133B2Trench pattern for trench capacitor yield improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
- 0893US12332478B2Photonic device and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·2 cites·20 claims
- 0992US9923079B2Composite dummy gate with conformal polysilicon layer for FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 20, 2018·8 cites·20 claims
- 1089US11348800B2Ultra narrow trench patterning with dry plasma etchingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·2 cites·20 claims
- 1189US9595443B2Metal gate structure of a semiconductor deviceZHU MING·Filed 2011·Granted Mar 14, 2017·8 cites·20 claims
- 1287US12471358B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
- 1387US10811270B2Ultra narrow trench patterning using plasma etchingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 20, 2020·4 cites·20 claims
- 1487US9779997B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·7 cites·19 claims
- 1585US2025113497A1Trench pattern for trench capacitor yield improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1684US12205982B2Trench pattern for trench capacitor yield improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 1783US10991805B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 27, 2021·2 cites·20 claims
- 1880US12170320B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 1979US12170332B2Fin field effect transistor devices including NMOS device and PMOS device with varied geometry of work function layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 2079US2025298187A1Photonic device and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2178US12020986B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 25, 2024·0 cites·20 claims
- 2278US11894443B2Method of making gate structure of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 6, 2024·0 cites·20 claims
- 2378US2024385371A1Semiconductor waveguides and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2477US7940480B2Optical transmission deviceASIA OPTICAL CO INC·Filed 2009·Granted May 10, 2011·7 cites·12 claims
- 2577US2025331266A1Selective formation of etch stop layers and the structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2674US2024371872A1Semiconductor structure with composite oxide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2774US2024282719A1Methods for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2873US12259576B2Semiconductor waveguides and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 25, 2025·0 cites·13 claims
- 2973US11894237B2Ultra narrow trench patterning with dry plasma etchingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 6, 2024·0 cites·20 claims
- 3073US11670695B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 3171US11380775B2Gate structure of a semiconductor device and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·0 cites·20 claims
- 3271US2025185329A1Selective formation of etch stop layers and the structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3370US2025285967A1Metal-insulator-metal capacitor and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3467US12374617B2Metal-insulator-metal capacitor including a dielectric pad layer and providing a high capacitance a low leakage currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·0 cites·20 claims
- 3566US12272689B2Semiconductor structure with composite oxide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 8, 2025·0 cites·20 claims
- 3666US9287179B2Composite dummy gate with conformal polysilicon layer for FinFET deviceHUANG YUAN-SHENG·Filed 2012·Granted Mar 15, 2016·2 cites·20 claims
- 3762US10553699B2Gate structure of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 4, 2020·0 cites·20 claims
- 3860US12002766B2Semiconductor structure having isolations between fins and comprising materials with different thermal expansion coefficients (CTE)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 4, 2024·0 cites·20 claims
- 3960US2025285870A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4059US9978853B2Method of forming gate structure of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 22, 2018·0 cites·20 claims
- 4159US2025253246A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4258US2025267894A1Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4358US2025374599A1Source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4453US9613819B2Process chamber, method of preparing a process chamber, and method of operating a process chamberTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 4, 2017·0 cites·20 claims
- 4553US9147679B2Method of semiconductor integrated circuit fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 29, 2015·0 cites·19 claims
- 4653US6551412B1Non-tubular type recycle system of wet bench tankTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 22, 2003·4 cites·25 claims
- 4750US10163718B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·0 cites·20 claims
- 4848US8691655B2Method of semiconductor integrated circuit fabricationHSIEH TZU-YEN·Filed 2012·Granted Apr 8, 2014·0 cites·20 claims
- 4947US12353069B2Waveguide having doped pillar structures to improve modulator efficiencyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 8, 2025·0 cites·19 claims
- 5035US2003082920A1Chamber-reversed dry etchingTAIWAN SEMICONDUCTOR MFG·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →