Inventor · disambiguated record
Yu-Lien Huang
Also filed as: HUANG YU-LIEN
193 granted patents·52 pending applications·3,630 citations·filing 2003–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD196TAIWAN SEMICONDUCTOR MFG35HUANG YU-LIEN8TSAI CHUN HSIUNG2CHANG CHUN-WEI1
Top patents by PatentIndex Score
245 records- 0199US9536738B2Vertical gate all around (VGAA) devices and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·878 cites·20 claims
- 0299US9406804B2FinFETs with contact-all-aroundTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 2, 2016·512 cites·20 claims
- 0399US8809139B2Fin-last FinFET and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Aug 19, 2014·224 cites·20 claims
- 0498US11355637B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·5 cites·20 claims
- 0598US10199502B2Structure of S/D contact and method of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 5, 2019·145 cites·20 claims
- 0698US9397099B1Semiconductor device having a plurality of fins and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 19, 2016·46 cites·21 claims
- 0798US8796666B1MOS devices with strain buffer layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 5, 2014·1.2k cites·20 claims
- 0897US11978670B2Self aligned contact schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 7, 2024·2 cites·20 claims
- 0997US11854814B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 1097US9653461B2FinFETs with low source/drain contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 16, 2017·20 cites·20 claims
- 1197US9318367B2FinFET structure with different fin heights and method for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 19, 2016·25 cites·15 claims
- 1296US12009429B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·2 cites·20 claims
- 1396US9991165B1Asymmetric source/drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 5, 2018·10 cites·20 claims
- 1496US9876112B2Source/drain structure and manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 23, 2018·13 cites·20 claims
- 1596US9391201B2Source/drain structure and manufacturing the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 12, 2016·19 cites·20 claims
- 1696US8809175B2Methods of anneal after deposition of gate layersTSAI CHUN HSIUNG·Filed 2011·Granted Aug 19, 2014·27 cites·20 claims
- 1795US12237419B2Gate structures in transistor devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 25, 2025·2 cites·20 claims
- 1895US12148622B2Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·1 cites·20 claims
- 1995US11380794B2Fin field-effect transistor device having contact plugs with re-entrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·3 cites·20 claims
- 2095US10714578B2Methods for forming recesses in source/drain regions and devices formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·8 cites·20 claims
- 2195US10312145B2Asymmetric source/drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 4, 2019·7 cites·20 claims
- 2295US10050149B1Gate structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·23 cites·20 claims
- 2395US8987791B2FinFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 24, 2015·18 cites·19 claims
- 2495US8980719B2Methods for doping fin field-effect transistorsTSAI CHUN HSIUNG·Filed 2010·Granted Mar 17, 2015·20 cites·20 claims
- 2594US11769770B2Methods of forming a semiconductor device having an air spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·2 cites·20 claims
- 2694US9659932B2Semiconductor device having a plurality of fins and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 23, 2017·9 cites·20 claims
- 2794US9627258B1Method of forming a contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 18, 2017·9 cites·20 claims
- 2894US9564353B2FinFETs with reduced parasitic capacitance and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 7, 2017·20 cites·20 claims
- 2994US8741759B2Method for fabricating a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jun 3, 2014·12 cites·20 claims
- 3094US8536658B2Mechanisms for forming ultra shallow junctionTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 17, 2013·12 cites·20 claims
- 3194US8431453B2Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structureHUANG YU-LIEN·Filed 2011·Granted Apr 30, 2013·23 cites·20 claims
- 3294US8298925B2Mechanisms for forming ultra shallow junctionWU CHII-MING·Filed 2010·Granted Oct 30, 2012·20 cites·20 claims
- 3394US8278196B2High surface dopant concentration semiconductor device and method of fabricatingHUANG YU-LIEN·Filed 2010·Granted Oct 2, 2012·25 cites·14 claims
- 3493US10164067B2Method of fabricating a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·6 cites·20 claims
- 3593US9620633B2Quantum well fin-like field effect transistor (QWFinFET) having a two-section combo QW structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 11, 2017·10 cites·20 claims
- 3692US11043424B2Increase the volume of epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 22, 2021·5 cites·20 claims
- 3792US10937877B2Methods for forming recesses in source/drain regions and devices formed thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 2, 2021·4 cites·20 claims
- 3892US10164106B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·6 cites·20 claims
- 3992US9620607B2Gate all around device structure and Fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 11, 2017·10 cites·20 claims
- 4092US9202691B2Semiconductor device having modified profile metal gateTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 1, 2015·8 cites·16 claims
- 4191US11355638B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·2 cites·20 claims
- 4291US10784106B2Selective film growth for bottom-up gap fillingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 22, 2020·4 cites·20 claims
- 4391US9362386B2FETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 7, 2016·8 cites·17 claims
- 4491US8828813B2Replacement channelsHUANG YU-LIEN·Filed 2012·Granted Sep 9, 2014·12 cites·22 claims
- 4591US8735266B2Mechanisms for forming ultra shallow junctionTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 27, 2014·8 cites·20 claims
- 4691US7579248B2Resolving pattern-loading issues of SiGe stressorTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 25, 2009·22 cites·23 claims
- 4790US9412814B2Structure and formation method of FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 9, 2016·10 cites·20 claims
- 4889US12310043B2Method of fabricating a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 20, 2025·1 cites·20 claims
- 4989US10170332B2FinFET thermal protection methods and related structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 1, 2019·8 cites·20 claims
- 5089US9153695B2Fin-last finFET and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 6, 2015·7 cites·22 claims
Showing the top 50 of 245 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →