Inventor · disambiguated record
Yuan-Ko Hwang
Also filed as: HWANG YUAN-KO · KUAN NAN-HUAN
27 granted patents·364 citations·filing 1996–2022
96Inventor score
Top patents by PatentIndex Score
27 records- 0190US10804395B2Metal-insensitive epitaxy formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 13, 2020·4 cites·20 claims
- 0290US6157867AMethod and system for on-line monitoring plasma chamber condition by comparing intensity of certain wavelengthTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Dec 5, 2000·68 cites·14 claims
- 0384US10263108B2Metal-insensitive epitaxy formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 16, 2019·3 cites·29 claims
- 0475US6024831AMethod and apparatus for monitoring plasma chamber condition by observing plasma stabilityTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Feb 15, 2000·27 cites·20 claims
- 0570US11495685B2Metal-insensitive epitaxy formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·0 cites·20 claims
- 0670US6489227B1Method of etching a polysilicon layer during the stripping of the photoresist shape used as an etch mask to create an opening to an underlying fuse structureTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Dec 3, 2002·17 cites·20 claims
- 0770US5858108ARemoval of particulate contamination in loadlocksTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Jan 12, 1999·34 cites·9 claims
- 0867US6256825B1Removal of particulate contamination in loadlocksTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jul 10, 2001·27 cites·4 claims
- 0967US6238160B1Method for transporting and electrostatically chucking a semiconductor wafer or the likeTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted May 29, 2001·36 cites·4 claims
- 1064US7144673B2Effective photoresist stripping process for high dosage and high energy ion implantationTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Dec 5, 2006·8 cites·19 claims
- 1164US6030489AApparatus for controlling etch rate when using consumable electrodes during plasma etchingTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Feb 29, 2000·25 cites·6 claims
- 1263US6185085B1System for transporting and electrostatically chucking a semiconductor wafer or the likeTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Feb 6, 2001·29 cites·8 claims
- 1361US11935951B2Metal-insensitive epitaxy formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·20 claims
- 1457US6706601B1Method of forming tiny silicon nitride spacer for flash EPROM by using dry+wet etching technologyTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 16, 2004·10 cites·41 claims
- 1555US5753566AMethod of spin-on-glass etchback using hot backside heliumTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted May 19, 1998·17 cites·18 claims
- 1654US9373594B2Under bump metallizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 21, 2016·0 cites·16 claims
- 1752US5955383AMethod for controlling etch rate when using consumable electrodes during plasma etchingTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Sep 21, 1999·15 cites·6 claims
- 1851US10134694B2Method of forming redistribution layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 20, 2018·0 cites·20 claims
- 1951US6024828ASpin-on-glass etchback uniformity improvement using hot backside heliumTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Feb 15, 2000·14 cites·10 claims
- 2047US6723654B2Method and apparatus for in-situ descum/hot bake/dry etch photoresist/polyimide layerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 20, 2004·4 cites·10 claims
- 2145US6117348AReal time monitoring of plasma etching processTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 12, 2000·17 cites·2 claims
- 2244US7576374B2Semiconductor device with robust polysilicon fuseTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 18, 2009·0 cites·11 claims
- 2341US6232172B1Method to prevent auto-doping induced threshold voltage shiftTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 15, 2001·7 cites·20 claims
- 2440US6617221B1Method of making capacitorsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 9, 2003·1 cites·19 claims
- 2537US6908813B2Method of forming tiny silicon nitride spacer for flash EPROM by fully wet etching technologyTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jun 21, 2005·1 cites·28 claims
- 2635US7384799B2Method to avoid amorphous-si damage during wet stripping processes in the manufacture of MEMS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jun 10, 2008·0 cites·18 claims
- 2735US7083897B2Method of fabricating a poly fuseTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Aug 1, 2006·0 cites·52 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →