Inventor · disambiguated record
Yuji Judai
Also filed as: JUDAI YUJI
24 granted patents·9 pending applications·243 citations·filing 1998–2006
96Inventor score
Top patents by PatentIndex Score
33 records- 0193US6590252B2Semiconductor device with oxygen diffusion barrier layer termed from composite nitrideMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jul 8, 2003·57 cites·11 claims
- 0283US6750492B2Semiconductor memory with hydrogen barrierMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jun 15, 2004·27 cites·13 claims
- 0376US7598556B2Ferroelectric memory devicePANASONIC CORP·Filed 2005·Granted Oct 6, 2009·7 cites·12 claims
- 0473US6818498B2Capacitance element and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Nov 16, 2004·14 cites·12 claims
- 0573US6166424ACapacitance structure for preventing degradation of the insulating filmMATSUSHITA ELECTRONICS CORP·Filed 1998·Granted Dec 26, 2000·26 cites·10 claims
- 0670US6891715B2Capacitor and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted May 10, 2005·12 cites·5 claims
- 0769US6562677B1Capacitance element and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted May 13, 2003·11 cites·8 claims
- 0867US6737697B2Semiconductor device and method and system for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted May 18, 2004·9 cites·4 claims
- 0967US6174822B1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRONICS CORP·Filed 1998·Granted Jan 16, 2001·24 cites·17 claims
- 1062US7060552B2Memory device with hydrogen-blocked ferroelectric capacitorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jun 13, 2006·8 cites·12 claims
- 1160US7326990B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Granted Feb 5, 2008·1 cites·12 claims
- 1259US6939725B2Method of fabricating semiconductor device with capacitor covered by a TEOS-03 filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Sep 6, 2005·5 cites·23 claims
- 1358US6602721B2Method for fabricating ferroelectric memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Aug 5, 2003·5 cites·8 claims
- 1458US6498094B2Method for providing a contact hole formed in an insulating filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Dec 24, 2002·19 cites·11 claims
- 1552US6573111B2Method of making a semiconductor device with capacitor elementMATSUSHITA ELECTRONICS CORP·Filed 2002·Granted Jun 3, 2003·4 cites·4 claims
- 1649US2006124983A1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
- 1748US7557011B2Semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2005·Granted Jul 7, 2009·0 cites·18 claims
- 1848US7180122B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Feb 20, 2007·2 cites·6 claims
- 1948US6753566B2Semiconductor device with an oxygen diffusion barrier layer formed from a composite nitrideMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jun 22, 2004·2 cites·11 claims
- 2046US7413949B2Capacitor and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Aug 19, 2008·0 cites·10 claims
- 2145US6849887B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Feb 1, 2005·8 cites·16 claims
- 2244US7157348B2Method for fabricating capacitor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jan 2, 2007·2 cites·23 claims
- 2344US2005087788A1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Application pending·0 cites
- 2443US6963095B2Ferroelectric memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Nov 8, 2005·0 cites·9 claims
- 2543US2005082638A1Semiconductor device and method for fabricating the sameFiled 2004·Application pending·0 cites
- 2640US6723637B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Apr 20, 2004·0 cites·4 claims
- 2740US2007235787A1Capacitor device having three-dimensional structureMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
- 2838US2003175998A1Method for fabricating capacitor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Application pending·0 cites
- 2937US2002149082A1Semiconductor device and method for fabricating the sameFiled 2002·Application pending·0 cites
- 3037US2002047111A1Semiconductor device having a ferroelectric capacitor with tensile stress propertiesFiled 2001·Application pending·0 cites
- 3134US6960800B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Nov 1, 2005·0 cites·11 claims
- 3230US2002000588A1Semiconductor device having a ferroelectric capacitor with tensile stress propertiesFiled 1998·Application pending·0 cites
- 3330US2002000589A1Semiconductor device with capacitor elements substantially free of titaniumFiled 1998·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →