Inventor · disambiguated record
Yusuke Kawaguchi
Also filed as: KAWAGUCHI YUSUKE
74 granted patents·20 pending applications·1,522 citations·filing 1996–2021
99Inventor score
Top patents by PatentIndex Score
94 records- 0198US6353252B1High breakdown voltage semiconductor device having trenched film connected to electrodesTOSHIBA KK·Filed 2000·Granted Mar 5, 2002·260 cites·10 claims
- 0294US7230297B2Trench-gated MOSFET including schottky diode thereinTOSHIBA KK·Filed 2005·Granted Jun 12, 2007·28 cites·22 claims
- 0394US6787848B2Vertical type power mosfet having trenched gate structureTOSHIBA KK·Filed 2002·Granted Sep 7, 2004·81 cites·43 claims
- 0494US6297534B1Power semiconductor deviceTOSHIBA KK·Filed 1999·Granted Oct 2, 2001·122 cites·30 claims
- 0593US7872308B2Semiconductor deviceTOSHIBA KK·Filed 2008·Granted Jan 18, 2011·22 cites·10 claims
- 0692US10236377B2Semiconductor deviceTOSHIBA KK·Filed 2016·Granted Mar 19, 2019·8 cites·6 claims
- 0792US7541643B2Semiconductor deviceTOSHIBA KK·Filed 2006·Granted Jun 2, 2009·25 cites·18 claims
- 0892US6614089B2Field effect transistorTOSHIBA KK·Filed 2001·Granted Sep 2, 2003·64 cites·9 claims
- 0992US6614077B2Semiconductor device improved in ESD reliabilityTOSHIBA KK·Filed 2001·Granted Sep 2, 2003·65 cites·23 claims
- 1091US6452231B1Semiconductor deviceTOSHIBA KK·Filed 1998·Granted Sep 17, 2002·94 cites·9 claims
- 1191US5932897AHigh-breakdown-voltage semiconductor deviceTOSHIBA KK·Filed 1998·Granted Aug 3, 1999·84 cites·18 claims
- 1290US7910984B2Semiconductor device and method for manufacturing sameTOSHIBA KK·Filed 2009·Granted Mar 22, 2011·21 cites·17 claims
- 1389US11489070B2Semiconductor deviceTOSHIBA KK·Filed 2021·Granted Nov 1, 2022·2 cites·7 claims
- 1488US8049270B2Semiconductor deviceTOSHIBA KK·Filed 2007·Granted Nov 1, 2011·16 cites·15 claims
- 1587US6380566B1Semiconductor device having FET structure with high breakdown voltageTOSHIBA KK·Filed 2000·Granted Apr 30, 2002·44 cites·20 claims
- 1686US7564097B2Trench-gated MOSFET including schottky diode thereinTOSHIBA KK·Filed 2007·Granted Jul 21, 2009·10 cites·6 claims
- 1786US5985708AMethod of manufacturing vertical power deviceTOSHIBA KK·Filed 1997·Granted Nov 16, 1999·73 cites·6 claims
- 1885USRE46311EPower semiconductor deviceTOSHIBA KK·Filed 2015·Granted Feb 14, 2017·4 cites·20 claims
- 1985US7514783B2Semiconductor moduleTOSHIBA KK·Filed 2005·Granted Apr 7, 2009·15 cites·13 claims
- 2085US6838730B1Semiconductor deviceTOSHIBA KK·Filed 2004·Granted Jan 4, 2005·36 cites·10 claims
- 2183US6118149ATrench gate MOSFETTOSHIBA KK·Filed 1998·Granted Sep 12, 2000·55 cites·8 claims
- 2282US10453957B2Semiconductor deviceTOSHIBA KK·Filed 2017·Granted Oct 22, 2019·4 cites·4 claims
- 2382US7485921B2Trench gate type MOS transistor semiconductor deviceTOSHIBA KK·Filed 2007·Granted Feb 3, 2009·10 cites·8 claims
- 2482US7061047B2Semiconductor device having trench gate structure and manufacturing method thereofTOSHIBA KK·Filed 2003·Granted Jun 13, 2006·26 cites·56 claims
- 2582US6720618B2Power MOSFET deviceTOSHIBA KK·Filed 2002·Granted Apr 13, 2004·24 cites·14 claims
- 2682US6605844B2Semiconductor deviceTOSHIBA KK·Filed 2001·Granted Aug 12, 2003·31 cites·5 claims
- 2781US8410546B2Semiconductor device and DC-DC converterKAWAGUCHI YUSUKE·Filed 2009·Granted Apr 2, 2013·10 cites·5 claims
- 2880US7633153B2Semiconductor moduleTOSHIBA KK·Filed 2007·Granted Dec 15, 2009·9 cites·2 claims
- 2980US7061060B2Offset-gate-type semiconductor deviceTOSHIBA KK·Filed 2003·Granted Jun 13, 2006·19 cites·17 claims
- 3080US6552389B2Offset-gate-type semiconductor deviceTOSHIBA KK·Filed 2001·Granted Apr 22, 2003·19 cites·12 claims
- 3178US6259136B1High-breakdown-voltage semiconductor deviceTOSHIBA KK·Filed 1999·Granted Jul 10, 2001·33 cites·30 claims
- 3277US7323719B2Group III-V nitride series semiconductor substrate and assessment method thereforHITACHI CABLE·Filed 2005·Granted Jan 29, 2008·5 cites·17 claims
- 3377US6864533B2MOS field effect transistor with reduced on-resistanceTOSHIBA KK·Filed 2001·Granted Mar 8, 2005·20 cites·8 claims
- 3476US7663186B2Semiconductor deviceTOSHIBA KK·Filed 2008·Granted Feb 16, 2010·4 cites·18 claims
- 3576US6469346B1High-breakdown-voltage semiconductor deviceTOSHIBA KK·Filed 2001·Granted Oct 22, 2002·18 cites·5 claims
- 3675US6563193B1Semiconductor deviceTOSHIBA KK·Filed 2000·Granted May 13, 2003·22 cites·23 claims
- 3772US10763359B2Semiconductor deviceTOSHIBA KK·Filed 2018·Granted Sep 1, 2020·1 cites·16 claims
- 3872US8008715B2Semiconductor deviceTOSHIBA KK·Filed 2008·Granted Aug 30, 2011·5 cites·17 claims
- 3970US9224823B2Semiconductor apparatusTOSHIBA KK·Filed 2013·Granted Dec 29, 2015·3 cites·6 claims
- 4070US7919811B2Semiconductor device and method for manufacturing sameTOSHIBA KK·Filed 2008·Granted Apr 5, 2011·3 cites·9 claims
- 4170US7479678B2Semiconductor element and method of manufacturing the sameTOSHIBA KK·Filed 2006·Granted Jan 20, 2009·4 cites·8 claims
- 4270US6977414B2Semiconductor deviceTOSHIBA KK·Filed 2003·Granted Dec 20, 2005·15 cites·18 claims
- 4370US6914294B2Semiconductor deviceTOSHIBA KK·Filed 2003·Granted Jul 5, 2005·15 cites·12 claims
- 4469US6818945B2Semiconductor deviceTOSHIBA KK·Filed 2003·Granted Nov 16, 2004·14 cites·15 claims
- 4568US8169023B2Power semiconductor deviceAKIYAMA MIWAKO·Filed 2009·Granted May 1, 2012·4 cites·20 claims
- 4667US7646059B2Semiconductor device including field effect transistor for use as a high-speed switching device and a power deviceTOSHIBA KK·Filed 2006·Granted Jan 12, 2010·3 cites·18 claims
- 4766US7227225B2Semiconductor device having a vertical MOS trench gate structureTOSHIBA KK·Filed 2004·Granted Jun 5, 2007·12 cites·12 claims
- 4863US9105716B2Semiconductor deviceAKIYAMA MIWAKO·Filed 2010·Granted Aug 11, 2015·1 cites·7 claims
- 4961US8987814B2Semiconductor deviceTOSHIBA KK·Filed 2013·Granted Mar 24, 2015·1 cites·4 claims
- 5060US7067876B2Semiconductor deviceTOSHIBA KK·Filed 2002·Granted Jun 27, 2006·9 cites·24 claims
Showing the top 50 of 94 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →