Inventor · disambiguated record
Yuki Kikkawa
Also filed as: KIKKAWA Yuki
12 granted patents·12 pending applications·6 citations·filing 2013–2025
83Inventor score
Files withTOKUYAMA CORP24
Top patents by PatentIndex Score
24 records- 0192US12195658B2Treatment liquid for semiconductor wafersTOKUYAMA CORP·Filed 2021·Granted Jan 14, 2025·2 cites·10 claims
- 0290US11390577B2Quaternary alkyl ammonium hypochlorite solution, method of producing the same, and method for processing semiconductor wafersTOKUYAMA CORP·Filed 2020·Granted Jul 19, 2022·2 cites·12 claims
- 0379US11390829B2Treatment liquid for semiconductor wafers, which contains hypochlorite ionsTOKUYAMA CORP·Filed 2019·Granted Jul 19, 2022·2 cites·15 claims
- 0476US12247299B2Treatment liquid for semiconductor with ruthenium and method of producing the sameTOKUYAMA CORP·Filed 2023·Granted Mar 11, 2025·0 cites·6 claims
- 0572US11572331B2Quaternary alkyl ammonium hypochlorite solution, method of producing the same, and method for processing semiconductor wafersTOKUYAMA CORP·Filed 2022·Granted Feb 7, 2023·0 cites·12 claims
- 0672US2025257264A1Semiconductor wafer treatment liquid containing hypochlorite ions and ph bufferTOKUYAMA CORP·Filed 2025·Application pending·0 cites
- 0772US2024182404A1INHIBITOR FOR RuO4 GAS GENERATION AND METHOD FOR INHIBITING RuO4 GAS GENERATIONTOKUYAMA CORP·Filed 2024·Application pending·0 cites
- 0864US11674230B2Treatment liquid for semiconductor with ruthenium and method of producing the sameTOKUYAMA CORP·Filed 2020·Granted Jun 13, 2023·0 cites·12 claims
- 0964US2022325205A1Treatment Liquid for Semiconductor Wafers, Which Contains Hypochlorite IonsTOKUYAMA CORP·Filed 2022·Application pending·0 cites
- 1062US12444617B2Semiconductor wafer processing liquid containing hypobromite ions and PH buffering agentTOKUYAMA CORP·Filed 2021·Granted Oct 14, 2025·0 cites·18 claims
- 1161US12509632B2Treatment liquid for semiconductors and method for producing sameTOKUYAMA CORP·Filed 2021·Granted Dec 30, 2025·0 cites·17 claims
- 1261US11932590B2Inhibitor for RuO4 gas generation and method for inhibiting RuO4 gas generationTOKUYAMA CORP·Filed 2020·Granted Mar 19, 2024·0 cites·8 claims
- 1360US2025215574A1Semiconductor treatment liquid for removing ruthenium silicideTOKUYAMA CORP·Filed 2024·Application pending·0 cites
- 1457US12247298B2Semiconductor wafer treatment liquid and production method thereofTOKUYAMA CORP·Filed 2021·Granted Mar 11, 2025·0 cites·13 claims
- 1557US12024663B2Onium salt-containing treatment liquid for semiconductor wafersTOKUYAMA CORP·Filed 2020·Granted Jul 2, 2024·0 cites·19 claims
- 1657US2025084309A1Semiconductor processing solutionTOKUYAMA CORP·Filed 2023·Application pending·0 cites
- 1756US2025235805A1Lubricant for filtration containing onium ionsTOKUYAMA CORP·Filed 2023·Application pending·0 cites
- 1856US2022010206A1Semiconductor wafer treatment liquid containing hypochlorite ions and ph bufferTOKUYAMA CORP·Filed 2020·Application pending·0 cites
- 1953US11572533B2Quaternary alkylammonium hypochlorite solution, method for manufacturing same, and method for cleaning semiconductor waferTOKUYAMA CORP·Filed 2019·Granted Feb 7, 2023·0 cites·18 claims
- 2051US2022328320A1Semiconductor treatment liquidTOKUYAMA CORP·Filed 2022·Application pending·0 cites
- 2150US2015171453A1Catalyst layer for anion-exchange membrane fuel cells, membrane-electrode assembly, anion-exchange membrane fuel cell using membrane-electrode assembly, and method for operating anion-exchange membrane fuel cellTOKUYAMA CORP·Filed 2013·Application pending·0 cites
- 2250US2024055272A1Method for processing semiconductor containing transition metal, method for producing semiconductor containing transition metal, and processing liquid for semiconductorsTOKUYAMA CORP·Filed 2021·Application pending·0 cites
- 2350US2024087911A1Method for treating transition metal semiconductor, and reducing agent-containing treatment liquid for transition metal oxideTOKUYAMA CORP·Filed 2021·Application pending·0 cites
- 2450US2022316996A1Ruthenium oxide gas absorbent liquid, analysis method for ruthenium oxide, trap device, and quantitative analyzerTOKUYAMA CORP·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →