Inventor · disambiguated record
Yutaka Kishida
Also filed as: KISHIDA YUTAKA
9 granted patents·5 pending applications·18 citations·filing 1999–2018
80Inventor score
Files withNIPPON STEEL & SUMITOMO METAL CORP4SILTRONIC AG4KISHIDA YUTAKA2TOYOTA MOTOR CO LTD2NIPPON STEEL CORP1
Top patents by PatentIndex Score
14 records- 0163US6899759B2Single crystal production methodSILTRONIC AG·Filed 2002·Granted May 31, 2005·5 cites·2 claims
- 0259US10370253B2Silicon refining deviceKISHIDA YUTAKA·Filed 2012·Granted Aug 6, 2019·1 cites·14 claims
- 0358US10968535B2SiC single crystal production method and production apparatusTOYOTA MOTOR CO LTD·Filed 2018·Granted Apr 6, 2021·0 cites·8 claims
- 0458US7582160B2Silicone single crystal production processSILTRONIC AG·Filed 2006·Granted Sep 1, 2009·1 cites·8 claims
- 0546US9822468B2Method for producing SiC single crystalTOYOTA MOTOR CO LTD·Filed 2016·Granted Nov 21, 2017·0 cites·2 claims
- 0642US10167199B2Method for manufacturing highly pure silicon, highly pure silicon obtained by this method, and silicon raw material for manufacturing highly pure siliconTOKUMARU SHINJI·Filed 2012·Granted Jan 1, 2019·0 cites·10 claims
- 0742US6200384B1Method for production of silicon single crystalNIPPON STEEL CORP·Filed 1999·Granted Mar 13, 2001·11 cites·5 claims
- 0841US2015082942A1Metal or semiconductor melt refinement method, and vacuum refinement deviceKISHIDA YUTAKA·Filed 2012·Application pending·0 cites
- 0940US7195668B2Crucible for the growth of silicon single crystal and process for the growth thereofSILTRONIC AG·Filed 2004·Granted Mar 27, 2007·0 cites·20 claims
- 1039US2017306522A1APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH PROCESS AND CRUCIBLE EMPLOYED THEREINNIPPON STEEL & SUMITOMO METAL CORP·Filed 2015·Application pending·0 cites
- 1138US6793902B2Seed crystal for production of silicon single crystal and method for production of silicon single crystalSILTRONIC AG·Filed 2002·Granted Sep 21, 2004·0 cites·4 claims
- 1238US2017226658A1APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL AND METHOD OF MANUFACTURING SiC SINGLE CRYSTALNIPPON STEEL & SUMITOMO METAL CORP·Filed 2015·Application pending·0 cites
- 1338US2017283982A1METHOD FOR PRODUCING P-TYPE SiC SINGLE CRYSTALNIPPON STEEL & SUMITOMO METAL CORP·Filed 2015·Application pending·0 cites
- 1438US2017298533A1METHOD FOR PRODUCING SiC SINGLE CRYSTAL AND APPARATUS FOR PRODUCING SiC SINGLE CRYSTALNIPPON STEEL & SUMITOMO METAL CORP·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →