Inventor · disambiguated record
Yutaka Koshino
Also filed as: KOSHINO YUTAKA
26 granted patents·509 citations·filing 1981–1995
97Inventor score
Top patents by PatentIndex Score
26 records- 0186US4710794AComposite semiconductor deviceTOSHIBA KK·Filed 1986·Granted Dec 1, 1987·78 cites·6 claims
- 0282US5086332APlanar semiconductor device having high breakdown voltageTOSHIBA KK·Filed 1989·Granted Feb 4, 1992·60 cites·4 claims
- 0376US4968932AEvaluation method for semiconductor deviceTOSHIBA KK·Filed 1988·Granted Nov 6, 1990·33 cites·4 claims
- 0472US4729966AProcess for manufacturing a Schottky FET device using metal sidewalls as gatesTOSHIBA KK·Filed 1986·Granted Mar 8, 1988·29 cites·6 claims
- 0566US5084408AMethod of making complete dielectric isolation structure in semiconductor integrated circuitTOSHIBA KK·Filed 1990·Granted Jan 28, 1992·36 cites·8 claims
- 0665US4532004AMethod of manufacturing a semiconductor deviceTOSHIBA KK·Filed 1984·Granted Jul 30, 1985·26 cites·6 claims
- 0765US4351894AMethod of manufacturing a semiconductor device using silicon carbide maskTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Sep 28, 1982·24 cites·14 claims
- 0862US5126817ADielectrically isolated structure for use in soi-type semiconductor deviceTOSHIBA KK·Filed 1990·Granted Jun 30, 1992·33 cites·7 claims
- 0955US4542400ASemiconductor device with multi-layered structureTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Sep 17, 1985·19 cites·12 claims
- 1053US5031021ASemiconductor device with a high breakdown voltageTOSHIBA KK·Filed 1986·Granted Jul 9, 1991·14 cites·3 claims
- 1152US5229323AMethod for manufacturing a semiconductor device with Schottky electrodesTOSHIBA KK·Filed 1992·Granted Jul 20, 1993·23 cites·25 claims
- 1250US4780426AMethod for manufacturing high-breakdown voltage semiconductor deviceTOSHIBA KK·Filed 1987·Granted Oct 25, 1988·17 cites·11 claims
- 1349US4984052ABonded substrate of semiconductor elements having a high withstand voltageTOSHIBA KK·Filed 1989·Granted Jan 8, 1991·15 cites·6 claims
- 1446US5049954AGaAs field effect semiconductor device having Schottky gate structureTOSHIBA KK·Filed 1989·Granted Sep 17, 1991·10 cites·3 claims
- 1545US5637894ASolid state image sensor device with single-layered transfer electrodesTOSHIBA KK·Filed 1995·Granted Jun 10, 1997·12 cites·3 claims
- 1644US4566174ASemiconductor device and method for manufacturing the sameTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Jan 28, 1986·11 cites·6 claims
- 1740US5029324ASemiconductor device having a semiconductive protection layerTOSHIBA KK·Filed 1990·Granted Jul 2, 1991·10 cites·6 claims
- 1840US4479830AMethod of manufacturing a semiconductor device using epitaxially regrown protrusion as an alignment markerTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Oct 30, 1984·9 cites·5 claims
- 1939US4560642AMethod of manufacturing a semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1984·Granted Dec 24, 1985·8 cites·3 claims
- 2039US4502207AWiring material for semiconductor device and method for forming wiring pattern therewithTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Mar 5, 1985·8 cites·2 claims
- 2137US4700455AMethod of fabricating Schottky gate-type GaAs field effect transistorTOSHIBA KK·Filed 1985·Granted Oct 20, 1987·7 cites·7 claims
- 2237US4415372AMethod of making transistors by ion implantations, electron beam irradiation and thermal annealingTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Nov 15, 1983·7 cites·5 claims
- 2335US4585489AMethod of controlling lifetime of minority carriers by electron beam irradiation through semi-insulating layerTOSHIBA KK·Filed 1984·Granted Apr 29, 1986·8 cites·4 claims
- 2435US4426234AMethod of forming reproducible impurity zone of gallium or aluminum in a wafer by implanting through composite layers and diffusion annealingTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Jan 17, 1984·6 cites·6 claims
- 2532US4515642AMethod of forming deep aluminum doped silicon by implanting Al and Si ions through alumina layer and device formed therebyTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted May 7, 1985·3 cites·8 claims
- 2631US4404736AMethod for manufacturing a semiconductor device of mesa typeTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Sep 20, 1983·3 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →