Inventor · disambiguated record
Yukihiro Kumagai
Also filed as: KUMAGAI YUKIHIRO
15 granted patents·2 pending applications·260 citations·filing 2000–2022
93Inventor score
Files withHITACHI LTD7RENESAS TECH CORP5HITACHI POWER SEMICONDUCTOR DEVICE LTD2MINEBEA POWER SEMICONDUCTOR DEVICE INC1RENESAS ELECTRONICS CORP1
Top patents by PatentIndex Score
17 records- 0195US6982465B2Semiconductor device with CMOS-field-effect transistors having improved drain current characteristicsRENESAS TECH CORP·Filed 2001·Granted Jan 3, 2006·121 cites·16 claims
- 0281US7109568B2Semiconductor device including n-channel fets and p-channel fets with improved drain current characteristicsHITACHI LTD·Filed 2003·Granted Sep 19, 2006·30 cites·7 claims
- 0378US7906848B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Mar 15, 2011·8 cites·16 claims
- 0473US6534375B2Method of forming a capacitor in a semiconductor integrated circuit device using a metal silicon nitride layer to protect an underlying metal silicide layer from oxidation during subsequent processing stepsHITACHI LTD·Filed 2001·Granted Mar 18, 2003·14 cites·27 claims
- 0570US6720603B2Capacitor structure and a semiconductor device with a first metal layer, a second metal silicide layer formed over the first metal layer and a second metal layer formed over the second metal silicide layerHITACHI LTD·Filed 2002·Granted Apr 13, 2004·11 cites·16 claims
- 0668US6521932B1Semiconductor device with copper wiring connected to storage capacitorHITACHI LTD·Filed 2000·Granted Feb 18, 2003·12 cites·1 claims
- 0767US6639263B2Semiconductor device with copper wiring connected to storage capacitorHITACHI LTD·Filed 2002·Granted Oct 28, 2003·10 cites·15 claims
- 0865US9076774B2Semiconductor device and a method of manufacturing sameHITACHI POWER SEMICONDUCTOR DEVICE LTD·Filed 2013·Granted Jul 7, 2015·1 cites·4 claims
- 0965US7009279B2Semiconductor device configured for suppressed germanium diffusion from a germanium-doped regions and a method for fabrication thereofTRECENTI TECHNOLOGIES INC·Filed 2004·Granted Mar 7, 2006·11 cites·7 claims
- 1063US7205617B2Semiconductor device including active regions and gate electrodes for field effect transistors, with a trench formed between the active regionsRENESAS TECH CORP·Filed 2002·Granted Apr 17, 2007·14 cites·7 claims
- 1158US7244643B2Semiconductor device and manufacturing method thereofHITACHI LTD·Filed 2002·Granted Jul 17, 2007·8 cites·11 claims
- 1257US6965140B2Semiconductor device including storage capacitorHITACHI LTD·Filed 2003·Granted Nov 15, 2005·5 cites·8 claims
- 1355US2025118696A1Solder and semiconductor deviceMINEBEA POWER SEMICONDUCTOR DEVICE INC·Filed 2022·Application pending·0 cites
- 1454US7193270B2Semiconductor device with a vertical transistorRENESAS TECH CORP·Filed 2004·Granted Mar 20, 2007·6 cites·3 claims
- 1554US6891761B2Semiconductor device and manufacturing methodRENESAS TECH CORP·Filed 2004·Granted May 10, 2005·6 cites·6 claims
- 1648US2024274490A1Semiconductor moduleHITACHI POWER SEMICONDUCTOR DEVICE LTD·Filed 2022·Application pending·0 cites
- 1747US7196395B2Semiconductor device and manufacturing methodRENESAS TECH CORP·Filed 2002·Granted Mar 27, 2007·3 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →