Inventor · disambiguated record

Yuan-Jen Lee

Also filed as: LEE YUAN-JEN

47 granted patents·16 pending applications·251 citations·filing 2005–2025

98Inventor score

Technology areasG11C H01F H10W H10N G01R

Files withTAIWAN SEMICONDUCTOR MFG CO LTD31 IND TECH RES INST18 HEADWAY TECH INC12 HEADWAY TECHNOLOGIES INC1 TQIWAN SEMICONDUCTOR MFG CO LTD1

Top patents by PatentIndex Score

63 records

0198US10014465B1Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropyHEADWAY TECH INC·Filed 2017·Granted Jul 3, 2018·22 cites·13 claims
0298US9780299B2Multilayer structure for reducing film roughness in magnetic devicesHEADWAY TECH INC·Filed 2015·Granted Oct 3, 2017·11 cites·19 claims
0397US10957851B2Magnetic layer for magnetic random access memory (MRAM) by moment enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 23, 2021·6 cites·20 claims
0497US10522752B1Magnetic layer for magnetic random access memory (MRAM) by moment enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·10 cites·22 claims
0596US9425387B1Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealingHEADWAY TECH INC·Filed 2015·Granted Aug 23, 2016·59 cites·31 claims
0695US9842988B2Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applicationsHEADWAY TECH INC·Filed 2015·Granted Dec 12, 2017·6 cites·11 claims
0795US7515458B2Structure and access method for magnetic memory cell and circuit of magnetic memoryIND TECH RES INST·Filed 2006·Granted Apr 7, 2009·41 cites·28 claims
0894US10658577B2Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 19, 2020·3 cites·20 claims
0993US9805816B2Implementation of a one time programmable memory using a MRAM stack designHEADWAY TECH INC·Filed 2016·Granted Oct 31, 2017·15 cites·52 claims
1092US10763428B2Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 1, 2020·3 cites·17 claims
1191US10102896B2Adaptive reference scheme for magnetic memory applicationsHEADWAY TECH INC·Filed 2017·Granted Oct 16, 2018·10 cites·20 claims
1291US2024381779A1Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment EnhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1387US10522744B2High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·4 cites·19 claims
1487US10115892B2Multilayer structure for reducing film roughness in magnetic devicesHEADWAY TECH INC·Filed 2017·Granted Oct 30, 2018·2 cites·7 claims
1585US10431736B2Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 1, 2019·1 cites·20 claims
1684US10230044B2Fully compensated synthetic ferromagnet for spintronics applicationsHEADWAY TECH INC·Filed 2017·Granted Mar 12, 2019·1 cites·8 claims
1784US7577019B2Magnetic memory cell with multiple-bit in stacked structure and magnetic memory deviceIND TECH RES INST·Filed 2007·Granted Aug 18, 2009·15 cites·14 claims
1881US10522747B2Fully compensated synthetic ferromagnet for spintronics applicationsHEADWAY TECH INC·Filed 2019·Granted Dec 31, 2019·3 cites·20 claims
1981US9747965B2Adaptive reference scheme for magnetic memory applicationsHEADWAY TECH INC·Filed 2015·Granted Aug 29, 2017·5 cites·14 claims
2081US2024371459A1External magnetic field detection for mram deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2179US12167699B2Magnetic layer for magnetic random access memory (MRAM) by moment enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 10, 2024·0 cites·20 claims
2278US10509074B2Electrical testing apparatus for spintronics devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·1 cites·28 claims
2378US2025338775A1Multilayer Structure for Reducing Film Roughness in Magnetic DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2476US11569441B2Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anistropyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·0 cites·20 claims
2576US11309489B2Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·0 cites·15 claims
2675US9343132B2MRAM write pulses to dissipate intermediate state domainsHEADWAY TECHNOLOGIES INC·Filed 2013·Granted May 17, 2016·5 cites·39 claims
2774US2025316643A1Wafer bonding method and bonded device structureTQIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2873US2025309132A1Wafer bonding method and bonded wafer structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2972US12167701B2Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 10, 2024·0 cites·10 claims
3071US11573270B2Electrical testing apparatus for spintronics devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 7, 2023·0 cites·20 claims
3171US10784310B2Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devicesHEADWAY TECH INC·Filed 2018·Granted Sep 22, 2020·2 cites·41 claims
3270US12356865B2Multilayer structure for reducing film roughness in magnetic devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 8, 2025·0 cites·20 claims
3370US11054471B2Electrical testing apparatus for spintronics devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 6, 2021·0 cites·20 claims
3469US12431214B2External magnetic field detection for MRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 30, 2025·0 cites·20 claims
3569US10325639B2Initialization process for magnetic random access memory (MRAM) productionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 18, 2019·2 cites·20 claims
3669US7208808B2Magnetic random access memory with lower switching fieldIND TECH RES INST·Filed 2005·Granted Apr 24, 2007·4 cites·6 claims
3767US7420837B2Method for switching magnetic moment in magnetoresistive random access memory with low currentIND TECH RES INST·Filed 2006·Granted Sep 2, 2008·5 cites·17 claims
3867US2019088866A1Multilayer Structure for Reducing Film Roughness in Magnetic DevicesHEADWAY TECH INC·Filed 2018·Application pending·0 cites
3966US12381158B2Wafer bonding method and bonded device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 5, 2025·0 cites·20 claims
4065US11563170B2Fully compensated synthetic ferromagnet for spintronics applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 24, 2023·0 cites·20 claims
4164US2023299041A1Wafer Bonding Method and Bonded Device StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
4263US7539049B2Magnetic random access memory and operation methodIND TECH RES INST·Filed 2007·Granted May 26, 2009·5 cites·20 claims
4361US10867651B2Initialization process for magnetic random access memory (MRAM) productionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims
4461US10699765B2Methods and circuits for programming STT-MRAM cells for reducing back-hoppingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 30, 2020·1 cites·17 claims
4559US10978124B2Method and circuits for programming STT-MRAM cells for reducing back-hoppingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 13, 2021·0 cites·20 claims
4659US7463510B2High-bandwidth magnetoresistive random access memory devicesIND TECH RES INST·Filed 2007·Granted Dec 9, 2008·4 cites·3 claims
4758US12250826B2Integrated circuit device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 11, 2025·0 cites·20 claims
4857US11956971B2Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin-torque transfer-magnetic random access memory) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 9, 2024·0 cites·20 claims
4957US2024096818A1Shielding for reducing electromagnetic interference and magnetic interference and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
5055US2024395734A1Electronic deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites

Showing the top 50 of 63 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →