Inventor · disambiguated record
Yu-Wen Liao
Also filed as: Liao yu-wen
106 granted patents·14 pending applications·623 citations·filing 2012–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD100TAIWAN SEMICONDUCTOR MFG17Liao yu-wen2PRONIX IND INCORPORATION1
Top patents by PatentIndex Score
120 records- 0199US10008662B2Perpendicular magnetic tunneling junction (MTJ) for improved magnetoresistive random-access memory (MRAM) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 26, 2018·53 cites·18 claims
- 0299US9172036B2Top electrode blocking layer for RRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 27, 2015·29 cites·20 claims
- 0398US9553265B1RRAM device with data storage layer having increased heightTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 24, 2017·33 cites·20 claims
- 0498US9461245B1Bottom electrode for RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 4, 2016·55 cites·20 claims
- 0598US9431604B2Resistive random access memory (RRAM) and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Aug 30, 2016·29 cites·20 claims
- 0698US9231197B2Logic compatible RRAM structure and processTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 5, 2016·23 cites·20 claims
- 0798US9023699B2Resistive random access memory (RRAM) structure and method of making the RRAM structureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted May 5, 2015·21 cites·20 claims
- 0898US8963114B2One transistor and one resistive (1T1R) random access memory (RRAM) structure with dual spacersTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 24, 2015·32 cites·11 claims
- 0997US9577009B1RRAM cell with PMOS access transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·29 cites·20 claims
- 1097US9543511B2RRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 10, 2017·22 cites·20 claims
- 1197US9425392B2RRAM cell structure with laterally offset BEVA/TEVATAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 23, 2016·13 cites·20 claims
- 1296US10504963B2RRAM memory cell with multiple filamentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·13 cites·20 claims
- 1396US9099647B2One transistor and one resistive (1T1R) random access memory (RAM) structure with dual spacersTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Aug 4, 2015·16 cites·20 claims
- 1495US10164169B2Memory device having a single bottom electrode layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·11 cites·20 claims
- 1595US10109793B2Bottom electrode for RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 23, 2018·11 cites·20 claims
- 1695US9178144B1RRAM cell with bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 3, 2015·25 cites·20 claims
- 1794US10566519B2Method for forming a flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 18, 2020·8 cites·20 claims
- 1894US10276485B2Method for forming a homogeneous bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·8 cites·20 claims
- 1994US10163981B2Metal landing method for RRAM technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·8 cites·20 claims
- 2094US9385316B2RRAM retention by depositing Ti capping layer before HK HfOTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 5, 2016·12 cites·19 claims
- 2193US12218005B2Integrated circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 4, 2025·1 cites·20 claims
- 2293US9537094B2Logic compatible RRAM structure and processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·6 cites·20 claims
- 2393US8921818B2Resistance variable memory structureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Dec 30, 2014·10 cites·20 claims
- 2493US8742390B1Logic compatible RRAM structure and processTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jun 3, 2014·15 cites·20 claims
- 2592US11296147B2Method for manufacturing memory device having spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 5, 2022·8 cites·20 claims
- 2692US9780302B2Top electrode for device structures in interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·5 cites·20 claims
- 2792US9112148B2RRAM cell structure with laterally offset BEVA/TEVATAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 18, 2015·6 cites·20 claims
- 2891US11751405B2Integrated circuit and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 5, 2023·2 cites·20 claims
- 2991US9312482B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 12, 2016·9 cites·20 claims
- 3090US10038139B2One transistor and one resistive random access memory (RRAM) structure with spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·6 cites·20 claims
- 3190US9780145B2Resistive random access memory (RRAM) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·5 cites·20 claims
- 3290US9466794B2Low form voltage resistive random access memory (RRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 11, 2016·6 cites·20 claims
- 3390US9231205B2Low form voltage resistive random access memory (RRAM)TAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 5, 2016·6 cites·18 claims
- 3489US11751485B2Flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·1 cites·20 claims
- 3589US9478638B2Resistive switching random access memory with asymmetric source and drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 25, 2016·6 cites·20 claims
- 3689US9331277B2One transistor and one resistive random access memory (RRAM) structure with spacerTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 3, 2016·6 cites·20 claims
- 3789US9076522B2Memory cells breakdown protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 7, 2015·12 cites·19 claims
- 3887US9941470B2RRAM device with data storage layer having increased heightTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 10, 2018·4 cites·20 claims
- 3987US9673391B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 6, 2017·5 cites·20 claims
- 4086US11201190B2RRAM memory cell with multiple filamentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 14, 2021·3 cites·20 claims
- 4186US9349953B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 24, 2016·6 cites·20 claims
- 4285US11094744B2Interconnect landing method for RRAM technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 17, 2021·2 cites·20 claims
- 4385US10903274B2Interconnect landing method for RRAM technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 26, 2021·2 cites·20 claims
- 4485US10050197B2Resistance variable memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·4 cites·20 claims
- 4584US12232333B2Integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 4683US12336442B2Memory device with bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 4783US11037990B2Method to form memory cells separated by a void-free dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 15, 2021·1 cites·20 claims
- 4883US10686125B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·1 cites·20 claims
- 4983US9078510B2Easily taken and carried holder for bootsLiao yu-wen·Filed 2014·Granted Jul 14, 2015·12 cites·1 claims
- 5082US9444045B2Top electrode for device structures in interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 13, 2016·2 cites·20 claims
Showing the top 50 of 120 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →