Inventor · disambiguated record
Yu-Ming Lin
Also filed as: LIN YU-MING
473 granted patents·207 pending applications·1,262 citations·filing 1988–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD523ACER INC35IND TECH RES INST15LIN YU-MING14MEDIATEK INC14
Top patents by PatentIndex Score
680 records- 0199US11581337B2Three-dimensional memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·7 cites·15 claims
- 0299US11569250B2Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·6 cites·20 claims
- 0399US11502128B2Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·9 cites·20 claims
- 0499US11495618B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·5 cites·20 claims
- 0599US11443987B2Semiconductor devices with backside air gap dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·6 cites·20 claims
- 0699US11423966B2Memory array staircase structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·23 cites·20 claims
- 0799US11404091B2Memory array word line routingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·17 cites·20 claims
- 0899US11217494B1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 4, 2022·9 cites·20 claims
- 0998US11943933B2Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 26, 2024·3 cites·20 claims
- 1098US11864393B2Memory device, integrated circuit device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 2, 2024·2 cites·20 claims
- 1198US11776602B2Memory array staircase structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·6 cites·20 claims
- 1298US11765892B2Three-dimensional memory device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 19, 2023·3 cites·20 claims
- 1398US11729986B2Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 15, 2023·6 cites·20 claims
- 1498US11729997B23D stackable memory and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·4 cites·20 claims
- 1598US11637126B2Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·6 cites·20 claims
- 1698US11621352B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 4, 2023·4 cites·20 claims
- 1798US11616080B2Three-dimensional memory device with ferroelectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 28, 2023·4 cites·20 claims
- 1898US11581368B2Memory device, integrated circuit device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 14, 2023·3 cites·19 claims
- 1998US11527553B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·5 cites·20 claims
- 2098US11527649B1Ferroelectric field effect transistor devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·9 cites·20 claims
- 2198US11515332B2Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 29, 2022·8 cites·20 claims
- 2298US11482595B1Dual side contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 25, 2022·4 cites·20 claims
- 2398US11411011B2Semiconductor structure having memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·5 cites·20 claims
- 2498US11404322B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 2, 2022·4 cites·20 claims
- 2598US11362108B2Semiconductor structure with a logic device and a memory device being formed in different levels, and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·4 cites·20 claims
- 2698US11335552B2Structure and formation method of semiconductor device with oxide semiconductor channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 17, 2022·6 cites·20 claims
- 2798US11222892B2Backside power rail and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 11, 2022·16 cites·20 claims
- 2898US11201085B2Semiconductor device structure having air gap and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 14, 2021·6 cites·20 claims
- 2998US10157790B1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 18, 2018·29 cites·20 claims
- 3097US12069868B2Gated ferroelectric memory cells for memory cell array and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·2 cites·20 claims
- 3197US11997855B2Back-end-of-line selector for memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 28, 2024·3 cites·20 claims
- 3297US11980036B2Semiconductor structure having memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 7, 2024·2 cites·20 claims
- 3397US11956968B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 9, 2024·2 cites·16 claims
- 3497US11869766B2Seed layer for ferroelectric memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 9, 2024·2 cites·20 claims
- 3597US11862219B2Memory cell and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 2, 2024·3 cites·20 claims
- 3697US11839080B23D memory with graphite conductive stripsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 5, 2023·4 cites·20 claims
- 3797US11664280B2Semiconductor devices with backside air gap dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 30, 2023·2 cites·20 claims
- 3897US11587950B2Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·3 cites·12 claims
- 3997US11527552B2Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·5 cites·20 claims
- 4097US11444069B23D semiconductor package including memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·3 cites·20 claims
- 4197US11152475B2Method for forming source/drain contacts utilizing an inhibitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 19, 2021·4 cites·20 claims
- 4297US9722093B1Oxide semiconductor transistor and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2016·Granted Aug 1, 2017·47 cites·13 claims
- 4396US12176433B2Polarization enhancement structure for enlarging memory windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·2 cites·20 claims
- 4496US12148795B2Increasing device density and reducing cross-talk spacer structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 19, 2024·2 cites·20 claims
- 4596US12058869B2Semiconductor structure with a logic device and a memory device being formed in different levels, and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·2 cites·20 claims
- 4696US12040273B2Semiconductor device with multi-layer dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·2 cites·20 claims
- 4796US12002534B2Memory array word line routingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·2 cites·20 claims
- 4896US11972982B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·2 cites·20 claims
- 4996US11910616B2Three-dimensional memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·2 cites·20 claims
- 5096US11856785B2Memory array and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
Showing the top 50 of 680 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →