Inventor · disambiguated record
Yu Lu
Also filed as: LU YU · LU YU-SHIN
30 granted patents·6 pending applications·383 citations·filing 2013–2017
97Inventor score
Top patents by PatentIndex Score
36 records- 0199US9142762B1Magnetic tunnel junction and method for fabricating a magnetic tunnel junctionQUALCOMM INC·Filed 2014·Granted Sep 22, 2015·45 cites·10 claims
- 0298US10043967B2Self-compensation of stray field of perpendicular magnetic elementsQUALCOMM INC·Filed 2014·Granted Aug 7, 2018·36 cites·12 claims
- 0398US9343659B1Embedded magnetoresistive random access memory (MRAM) integration with top contactsQUALCOMM INC·Filed 2015·Granted May 17, 2016·49 cites·11 claims
- 0497US9704919B1High aspect ratio vertical interconnect access (via) interconnections in magnetic random access memory (MRAM) bit cellsQUALCOMM INC·Filed 2016·Granted Jul 11, 2017·30 cites·20 claims
- 0597US9437272B1Multi-bit spin torque transfer magnetoresistive random access memory with sub-arraysQUALCOMM INC·Filed 2015·Granted Sep 6, 2016·33 cites·30 claims
- 0697US9406875B2MRAM integration techniques for technology scalingQUALCOMM INC·Filed 2013·Granted Aug 2, 2016·20 cites·13 claims
- 0796US9614143B2De-integrated trench formation for advanced MRAM integrationQUALCOMM INC·Filed 2015·Granted Apr 4, 2017·17 cites·10 claims
- 0896US9269893B2Replacement conductive hard mask for multi-step magnetic tunnel junction (MTJ) etchQUALCOMM INC·Filed 2014·Granted Feb 23, 2016·22 cites·13 claims
- 0995US9362336B2Sub-lithographic patterning of magnetic tunneling junction devicesQUALCOMM INC·Filed 2014·Granted Jun 7, 2016·15 cites·11 claims
- 1094US9576801B2High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memoryQUALCOMM INC·Filed 2014·Granted Feb 21, 2017·17 cites·24 claims
- 1194US9496314B1Shared source line magnetic tunnel junction (MTJ) bit cells employing uniform MTJ connection patterns for reduced areaQUALCOMM INC·Filed 2015·Granted Nov 15, 2016·12 cites·30 claims
- 1293US9595662B2MRAM integration techniques for technology scalingQUALCOMM INC·Filed 2016·Granted Mar 14, 2017·8 cites·13 claims
- 1392US9461094B2Switching film structure for magnetic random access memory (MRAM) cellQUALCOMM INC·Filed 2014·Granted Oct 4, 2016·14 cites·18 claims
- 1489US9548096B1Reverse complement magnetic tunnel junction (MTJ) bit cells employing shared source lines, and related methodsQUALCOMM INC·Filed 2015·Granted Jan 17, 2017·10 cites·28 claims
- 1584US9647037B2Resistive random access memory device with resistance-based storage element and method of fabricating sameQUALCOMM INC·Filed 2015·Granted May 9, 2017·4 cites·21 claims
- 1684US9490424B2Sub-lithographic patterning of magnetic tunneling junction devicesQUALCOMM INC·Filed 2016·Granted Nov 8, 2016·6 cites·16 claims
- 1783US10008537B2Complementary magnetic tunnel junction (MTJ) bit cell with shared bit lineQUALCOMM INC·Filed 2015·Granted Jun 26, 2018·6 cites·16 claims
- 1883US9728718B2Magnetic tunnel junction (MTJ) device arrayQUALCOMM INC·Filed 2016·Granted Aug 8, 2017·3 cites·20 claims
- 1983US9508439B2Non-volatile multiple time programmable memory deviceQUALCOMM INC·Filed 2015·Granted Nov 29, 2016·4 cites·28 claims
- 2083US9318696B2Self-aligned top contact for MRAM fabricationQUALCOMM INC·Filed 2014·Granted Apr 19, 2016·6 cites·19 claims
- 2182US10109674B2Semiconductor metallization structureQUALCOMM INC·Filed 2015·Granted Oct 23, 2018·4 cites·9 claims
- 2281US9865798B2Electrode structure for resistive memory deviceQUALCOMM INC·Filed 2015·Granted Jan 9, 2018·5 cites·30 claims
- 2380US9349939B2Etch-resistant protective coating for a magnetic tunnel junction deviceQUALCOMM INC·Filed 2014·Granted May 24, 2016·3 cites·29 claims
- 2479US9666792B2Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) elementsQUALCOMM INC·Filed 2015·Granted May 30, 2017·3 cites·29 claims
- 2578US9548333B2MRAM integration with low-K inter-metal dielectric for reduced parasitic capacitanceQUALCOMM INC·Filed 2014·Granted Jan 17, 2017·4 cites·12 claims
- 2676US9570509B2Magnetic tunnel junction (MTJ) device arrayQUALCOMM INC·Filed 2015·Granted Feb 14, 2017·2 cites·30 claims
- 2772US9721634B2Decoupling of source line layout from access transistor contact placement in a magnetic tunnel junction (MTJ) memory bit cell to facilitate reduced contact resistanceQUALCOMM INC·Filed 2015·Granted Aug 1, 2017·3 cites·36 claims
- 2863US9502469B2Electrically reconfigurable interposer with built-in resistive memoryQUALCOMM INC·Filed 2014·Granted Nov 22, 2016·1 cites·17 claims
- 2962US10347821B2Electrode structure for resistive memory deviceQUALCOMM INC·Filed 2017·Granted Jul 9, 2019·1 cites·30 claims
- 3051US2014016322A1Light emitting deviceLEXTAR ELECTRONICS CORP·Filed 2013·Application pending·0 cites
- 3149US2016133833A1Replacement conductive hard mask for multi-step magnetic tunnel junction (mtj) etchQUALCOMM INC·Filed 2016·Application pending·0 cites
- 3246US2015311429A1Magnetic tunnel junction and method for fabricating a magnetic tunnel junctionQUALCOMM INC·Filed 2015·Application pending·0 cites
- 3345US9524765B2Differential magnetic tunnel junction pair including a sense layer with a high coercivity portionQUALCOMM INC·Filed 2014·Granted Dec 20, 2016·0 cites·30 claims
- 3438US2016043137A1Resistive memory device with zero-transistor, one-resistor bit cells integrated with one-transistor, one-resistor bit cells on a dieQUALCOMM INC·Filed 2014·Application pending·0 cites
- 3536US2017084819A1Magnetresistive random-access memory and fabrication method thereofQUALCOMM INC·Filed 2015·Application pending·0 cites
- 3632US2016254318A1MAGNETIC RANDOM ACCESS MEMORY (MRAM) BIT CELLS EMPLOYING SOURCE LINES (SLs) AND/OR BIT LINES (BLs) DISPOSED IN MULTIPLE, STACKED METAL LAYERS TO REDUCE MRAM BIT CELL RESISTANCEQUALCOMM INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →