Inventor · disambiguated record
Yuanjie Lv
Also filed as: LV YUANJIE
13 granted patents·0 citations·filing 2017–2023
80Inventor score
Top patents by PatentIndex Score
13 records- 0153US11349043B2Method for manufacturing tilted mesa and method for manufacturing detectorTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2020·Granted May 31, 2022·0 cites·15 claims
- 0253US11244821B2Method for preparing isolation area of gallium oxide deviceTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2020·Granted Feb 8, 2022·0 cites·10 claims
- 0352US11757048B1Method for producing gallium oxide Schottky barrier diode with negative beveled angle terminalTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2023·Granted Sep 12, 2023·0 cites·7 claims
- 0451US12268035B2Ultraviolet detector and preparation method thereforTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2022·Granted Apr 1, 2025·0 cites·5 claims
- 0550US11282977B2Silicon carbide detector and preparation method thereforTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2020·Granted Mar 22, 2022·0 cites·17 claims
- 0649US11456387B2Normally-off gallium oxide field-effect transistor structure and preparation method thereforTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2020·Granted Sep 27, 2022·0 cites·5 claims
- 0748US12112944B2Preparation method of GaN field effect transistor based on diamond substrateTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2022·Granted Oct 8, 2024·0 cites·12 claims
- 0848US11417779B2Gallium oxide SBD terminal structure and preparation methodTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2020·Granted Aug 16, 2022·0 cites·12 claims
- 0947US11342474B2Method for preparing avalanche photodiodeTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2020·Granted May 24, 2022·0 cites·9 claims
- 1045US11127849B2Enhancement-mode field effect transistorTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2017·Granted Sep 21, 2021·0 cites·18 claims
- 1142US11189696B2Method for preparing self-aligned surface channel field effect transistor and power deviceTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2019·Granted Nov 30, 2021·0 cites·18 claims
- 1241US10854741B2Enhanced HFETTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2017·Granted Dec 1, 2020·0 cites·10 claims
- 1337US10505024B2Method for preparing cap-layer-structured gallium oxide field effect transistorTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2017·Granted Dec 10, 2019·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →