Inventor · disambiguated record
Yuichi Matsui
Also filed as: MATSUI YUICHI
39 granted patents·10 pending applications·571 citations·filing 1987–2023
98Inventor score
Top patents by PatentIndex Score
49 records- 0193US7667218B2Semiconductor integrated circuit device and method of manufacturing the sameRENESAS TECH CORP·Filed 2005·Granted Feb 23, 2010·19 cites·14 claims
- 0291US6743739B2Fabrication method for semiconductor integrated devicesRENESAS TECH CORP·Filed 2002·Granted Jun 1, 2004·47 cites·11 claims
- 0390US7728376B2Semiconductor memory deviceHITACHI LTD·Filed 2007·Granted Jun 1, 2010·15 cites·4 claims
- 0490US7638786B2Semiconductor and semiconductor manufacturing arrangements having a chalcogenide layer formed of columnar crystal grains perpendicular to a main substrate surfaceRENESAS TECH CORP·Filed 2005·Granted Dec 29, 2009·12 cites·19 claims
- 0590US6326218B1Semiconductor integrated circuit and its manufacturing methodHITACHI LTD·Filed 2000·Granted Dec 4, 2001·46 cites·6 claims
- 0687US8106441B2Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the sameAKIYAMA SATORU·Filed 2010·Granted Jan 31, 2012·7 cites·13 claims
- 0786US8859344B2Semiconductor memoryMATSUI YUICHI·Filed 2011·Granted Oct 14, 2014·5 cites·20 claims
- 0885US7408218B2Semiconductor device having plural dram memory cells and a logic circuitRENESAS TECH CORP·Filed 2001·Granted Aug 5, 2008·30 cites·21 claims
- 0985US6451665B1Method of manufacturing a semiconductor integrated circuitHITACHI LTD·Filed 1999·Granted Sep 17, 2002·66 cites·8 claims
- 1083US8000126B2Semiconductor device with recording layer containing indium, germanium, antimony and telluriumRENESAS ELECTRONICS CORP·Filed 2007·Granted Aug 16, 2011·12 cites·19 claims
- 1183US6503791B2Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor deviceHITACHI LTD·Filed 2001·Granted Jan 7, 2003·21 cites·16 claims
- 1281US7683419B2Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the sameRENESAS TECH CORP·Filed 2008·Granted Mar 23, 2010·7 cites·7 claims
- 1381US6833577B2Semiconductor deviceRENESAS TECH CORP·Filed 2002·Granted Dec 21, 2004·16 cites·18 claims
- 1481US6555429B2Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor deviceHITACHI LTD·Filed 2001·Granted Apr 29, 2003·19 cites·6 claims
- 1579US8866120B2Semiconductor memoryMATSUI YUICHI·Filed 2011·Granted Oct 21, 2014·2 cites·12 claims
- 1678US7804118B2Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the sameRENESAS TECH CORP·Filed 2009·Granted Sep 28, 2010·5 cites·13 claims
- 1778US5086014ASchottky diode manufacturing process employing the synthesis of a polycrystalline diamond thin filmKOBE STEEL LTD·Filed 1990·Granted Feb 4, 1992·69 cites·5 claims
- 1877US7511327B2Capacitive electrode having semiconductor layers with an interface of separated grain boundariesRENESAS TECH CORP·Filed 2007·Granted Mar 31, 2009·3 cites·11 claims
- 1977US5107315AMis type diamond field-effect transistor with a diamond insulator undercoatKOBE STEEL LTD·Filed 1991·Granted Apr 21, 1992·41 cites·1 claims
- 2074US8890107B2Semiconductor memoryMATSUI YUICHI·Filed 2009·Granted Nov 18, 2014·3 cites·15 claims
- 2174US6992022B2Fabrication method for semiconductor integrated devicesRENESAS TECH CORP·Filed 2004·Granted Jan 31, 2006·14 cites·8 claims
- 2273US6534375B2Method of forming a capacitor in a semiconductor integrated circuit device using a metal silicon nitride layer to protect an underlying metal silicide layer from oxidation during subsequent processing stepsHITACHI LTD·Filed 2001·Granted Mar 18, 2003·14 cites·27 claims
- 2373US6483143B2Semiconductor device having a capacitor structure including a self-alignment deposition preventing filmHITACHI LTD·Filed 2001·Granted Nov 19, 2002·11 cites·2 claims
- 2470US6720603B2Capacitor structure and a semiconductor device with a first metal layer, a second metal silicide layer formed over the first metal layer and a second metal layer formed over the second metal silicide layerHITACHI LTD·Filed 2002·Granted Apr 13, 2004·11 cites·16 claims
- 2567US7112819B2Semiconductor device and manufacturing method thereofHITACHI LTD·Filed 2004·Granted Sep 26, 2006·10 cites·17 claims
- 2666US6521494B2Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor deviceHITACHI LTD·Filed 2002·Granted Feb 18, 2003·7 cites·6 claims
- 2763US8833857B2Vehicle seatHARA YOSHIRO·Filed 2011·Granted Sep 16, 2014·6 cites·4 claims
- 2860US7259058B2Fabricating method of semiconductor integrated circuitsRENESAS TECHONOLOGY CORP·Filed 2001·Granted Aug 21, 2007·8 cites·29 claims
- 2959US7800153B2Capacitive electrode having semiconductor layers with an interface of separated grain boundariesRENESAS ELECTRONICS CORP·Filed 2008·Granted Sep 21, 2010·0 cites·12 claims
- 3058US2012241715A1Semiconductor memoryMATSUI YUICHI·Filed 2012·Application pending·0 cites
- 3157US8044489B2Semiconductor device with fluorine-containing interlayer dielectric film to prevent chalcogenide material layer from exfoliating from the interlayer dielectric film and process for producing the sameRENESAS ELECTRONICS CORP·Filed 2006·Granted Oct 25, 2011·5 cites·17 claims
- 3257US6955959B2Method of making a memory structure having a multilayered contact and a storage capacitor with a composite dielectric layer of crystalized niobium pentoxide and tantalum pentoxide filmsRENESAS TECH CORP·Filed 2004·Granted Oct 18, 2005·3 cites·14 claims
- 3356US6664157B2Semiconductor integrated circuit device and the method of producing the sameHITACHI LTD·Filed 2001·Granted Dec 16, 2003·7 cites·32 claims
- 3455US2015214476A1Semiconductor memoryRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 3554US4894691ACompound semiconductor device with superlattice channel regionSUMITOMO ELECTRIC INDUSTRIES·Filed 1987·Granted Jan 16, 1990·15 cites·15 claims
- 3653US7364965B2Semiconductor device and method of fabricationHITACHI LTD·Filed 2004·Granted Apr 29, 2008·4 cites·12 claims
- 3753US7265407B2Capacitive electrode having semiconductor layers with an interface of separated grain boundariesRENESAS TECH CORP·Filed 2005·Granted Sep 4, 2007·0 cites·10 claims
- 3852US2011215288A1Semiconductor storage device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2011·Application pending·0 cites
- 3951US2023421379A1Face authentication terminal, face authentication system, and face authentication methodHITACHI LG DATA STORAGE INC·Filed 2023·Application pending·0 cites
- 4049US6989304B1Method for manufacturing a ruthenium film for a semiconductor deviceRENESAS TECH CORP·Filed 2000·Granted Jan 24, 2006·3 cites·20 claims
- 4149US2007170413A1Semiconductor memoryMATSUI YUICHI·Filed 2005·Application pending·0 cites
- 4248US2006266992A1Semiconductor storage device and manufacturing method thereofMATSUI YUICHI·Filed 2006·Application pending·0 cites
- 4344US2010015755A1Manufacturing method of semiconductor memory deviceRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 4442US2011049454A1Semiconductor deviceTERAO MOTOYASU·Filed 2006·Application pending·0 cites
- 4541US2007257295A1Semiconductor memory deviceHITACHI LTD·Filed 2007·Application pending·0 cites
- 4637US4823171ACompound semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1987·Granted Apr 18, 1989·5 cites·5 claims
- 4736US2012025579A1Vehicle seatONO TATSUYA·Filed 2011·Application pending·0 cites
- 4832US8618523B2Semiconductor deviceTAKAURA NORIKATSU·Filed 2006·Granted Dec 31, 2013·0 cites·14 claims
- 4932US5373172ASemiconducting diamond light-emitting elementKOBE STEEL LTD·Filed 1993·Granted Dec 13, 1994·3 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →