Inventor · disambiguated record
Yuanyuan Min
Also filed as: MIN YUANYUAN
12 granted patents·10 pending applications·2 citations·filing 2021–2025
81Inventor score
Top patents by PatentIndex Score
22 records- 0192US11710529B2Three-dimensional memory device programming with reduced disturbanceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jul 25, 2023·2 cites·22 claims
- 0277US2025308598A1Programming method for semiconductor device and semiconductor deviceYANGTZE MEMORY ECHNOLOGIES CO LTD·Filed 2025·Application pending·0 cites
- 0373US12176043B2Three-dimensional memory device programming with reduced disturbanceYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 0471US2025239309A1Method of improving program operation speed in 3d nand systemsYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0570US12499949B2Memory devices and operating methods thereof, memory systemsYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Dec 16, 2025·0 cites·20 claims
- 0668US2025140329A1Memory device, memory system, and read operation method thereofYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0764US12354668B2Programming method for semiconductor device and semiconductor deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jul 8, 2025·0 cites·20 claims
- 0864US11423995B2Three-dimensional memory device programming with reduced disturbanceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 23, 2022·0 cites·20 claims
- 0961US12230342B2Memory device, memory system, and read operation method thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Feb 18, 2025·0 cites·20 claims
- 1059US12300323B2Method of improving program operation speed in 3D NAND systemsYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted May 13, 2025·0 cites·19 claims
- 1158US12260096B2Method of reducing Vpass disturb in 3D nand systemsYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Mar 25, 2025·0 cites·20 claims
- 1257US2025232816A1Memory devices and operation methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1355US11864379B2Three-dimensional memory and control method thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jan 2, 2024·0 cites·14 claims
- 1452US12299332B2Memory devices, operation method thereof and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 1550US2025336444A1Memory systems, memorys, and operation methods of the memorysYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1650US2025273270A1Memory devices, memory systems, and operation methodsYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1749US2025174277A1Memory device and program operation thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1848US2025273281A1Memory devices, program methods, and memory systemsYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1946US12170114B2Three-dimensional memory device and method for reading the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Dec 17, 2024·0 cites·10 claims
- 2046US2025273269A1Programming methods for memory devices, memory devices and memory systemsYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 2146US2025068558A1Method for operating a memory, a memory and a memory systemYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 2244US11670373B2Three-dimensional memory device programming with reduced threshold voltage shiftYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
Join the waitlist — get patent alerts
Get an alert when Yuanyuan Min files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →