Inventor · disambiguated record
Yuzuru Ohji
Also filed as: OHJI YUZURU
22 granted patents·737 citations·filing 1984–2004
97Inventor score
Top patents by PatentIndex Score
22 records- 0193US5499207ASemiconductor memory device having improved isolation between electrodes, and process for fabricating the sameHITACHI LTD·Filed 1994·Granted Mar 12, 1996·86 cites·32 claims
- 0293US5188976AManufacturing method of non-volatile semiconductor memory deviceHITACHI LTD·Filed 1991·Granted Feb 23, 1993·120 cites·10 claims
- 0390US6326218B1Semiconductor integrated circuit and its manufacturing methodHITACHI LTD·Filed 2000·Granted Dec 4, 2001·46 cites·6 claims
- 0488US6255151B1Semiconductor integrated circuit device and method of manufacturing sameHITACHI LTD·Filed 1998·Granted Jul 3, 2001·81 cites·32 claims
- 0587US6756262B1Semiconductor integrated circuit device having spaced-apart electrodes and the method thereofHITACHI LTD·Filed 2000·Granted Jun 29, 2004·46 cites·13 claims
- 0687US6423992B2Semiconductor integrated circuit deviceHITACHI LTD·Filed 2001·Granted Jul 23, 2002·35 cites·22 claims
- 0786US4907046ASemiconductor device with multilayer silicon oxide silicon nitride dielectricHITACHI LTD·Filed 1988·Granted Mar 6, 1990·39 cites·10 claims
- 0885US6881597B2Method of manufacturing a semiconductor device to provide a plurality of test element groups (TEGs) in a scribe regionRENESAS TECH CORP·Filed 2002·Granted Apr 19, 2005·39 cites·6 claims
- 0985US6451665B1Method of manufacturing a semiconductor integrated circuitHITACHI LTD·Filed 1999·Granted Sep 17, 2002·66 cites·8 claims
- 1078US6426255B1Process for making a semiconductor integrated circuit device having a dynamic random access memoryHITACHI LTD·Filed 2000·Granted Jul 30, 2002·23 cites·38 claims
- 1173US6534375B2Method of forming a capacitor in a semiconductor integrated circuit device using a metal silicon nitride layer to protect an underlying metal silicide layer from oxidation during subsequent processing stepsHITACHI LTD·Filed 2001·Granted Mar 18, 2003·14 cites·27 claims
- 1270US6720603B2Capacitor structure and a semiconductor device with a first metal layer, a second metal silicide layer formed over the first metal layer and a second metal layer formed over the second metal silicide layerHITACHI LTD·Filed 2002·Granted Apr 13, 2004·11 cites·16 claims
- 1369US6717202B2HSG semiconductor capacitor with migration inhibition layerRENESAS TECH CORP·Filed 2002·Granted Apr 6, 2004·15 cites·25 claims
- 1464US6576946B1Semiconductor device comprising capacitor cells, bit lines, word lines, and MOS transistors in a memory cell area over a semiconductor substrateHITACHI LTD·Filed 1999·Granted Jun 10, 2003·24 cites·6 claims
- 1560US6627497B2Semiconductor integrated circuit device and method of manufacturing the sameHITACHI LTD·Filed 2002·Granted Sep 30, 2003·7 cites·30 claims
- 1660US5736449ASemiconductor memory device having improved isolation between electrodes, and process for fabricating the sameHITACHI LTD·Filed 1996·Granted Apr 7, 1998·17 cites·8 claims
- 1758US6524927B1Semiconductor device and method of fabricating the sameHITACHI LTD·Filed 1999·Granted Feb 25, 2003·17 cites·21 claims
- 1857US6781172B2Semiconductor device with adhesion-improvement capacitor and process for producing the deviceHITACHI LTD·Filed 2001·Granted Aug 24, 2004·6 cites·10 claims
- 1957US5343353ASemiconductor device and process of producing the sameHITACHI LTD·Filed 1992·Granted Aug 30, 1994·27 cites·51 claims
- 2056US4563900AAcoustic microscopeHITACHI LTD·Filed 1984·Granted Jan 14, 1986·12 cites·4 claims
- 2140US6927439B2Semiconductor memory with strongly adhesive electrodeHITACHI LTD·Filed 2004·Granted Aug 9, 2005·0 cites·6 claims
- 2237US6583463B1Semiconductor integrated circuit device with information storage capacitor having ruthenium dioxide lower electrode and crystallized TA2O5 capacitor insulatorHITACHI LTD·Filed 1998·Granted Jun 24, 2003·6 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →