Inventor · disambiguated record
Yuichi Ohsawa
Also filed as: OHSAWA YUICHI
107 granted patents·9 pending applications·2,254 citations·filing 1992–2022
99Inventor score
Top patents by PatentIndex Score
116 records- 0199US8716817B2Magnetic memory element and nonvolatile memory deviceSAIDA DAISUKE·Filed 2012·Granted May 6, 2014·97 cites·20 claims
- 0299US5549978AMagnetoresistance effect elementTOSHIBA KK·Filed 1993·Granted Aug 27, 1996·200 cites·17 claims
- 0398US9299918B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2014·Granted Mar 29, 2016·29 cites·11 claims
- 0498US6937447B2Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memoryTOSHIBA KK·Filed 2002·Granted Aug 30, 2005·82 cites·21 claims
- 0597US8878317B2Magnetoresistive element and magnetic memoryDAIBOU TADAOMI·Filed 2011·Granted Nov 4, 2014·29 cites·11 claims
- 0697US8576616B2Magnetic element and nonvolatile memory deviceSAIDA DAISUKE·Filed 2011·Granted Nov 5, 2013·43 cites·20 claims
- 0797US8488375B2Magnetic recording element and nonvolatile memory deviceSAIDA DAISUKE·Filed 2011·Granted Jul 16, 2013·37 cites·20 claims
- 0896US8737122B2Nonvolatile memory deviceSAIDA DAISUKE·Filed 2012·Granted May 27, 2014·34 cites·19 claims
- 0996US8508979B2Magnetic recording element and nonvolatile memory deviceSAIDA DAISUKE·Filed 2011·Granted Aug 13, 2013·30 cites·20 claims
- 1095US8710605B2Magnetic memory and method of manufacturing the sameTAKAHASHI SHIGEKI·Filed 2011·Granted Apr 29, 2014·21 cites·13 claims
- 1195US7120049B2Magnetic cell and magnetic memoryTOSHIBA KK·Filed 2006·Granted Oct 10, 2006·32 cites·21 claims
- 1294US10211394B1Magnetic memoryTOSHIBA KK·Filed 2018·Granted Feb 19, 2019·16 cites·13 claims
- 1394US10141037B2Magnetic memory deviceTOSHIBA KK·Filed 2017·Granted Nov 27, 2018·15 cites·25 claims
- 1494US9881660B2Magnetic memoryTOSHIBA KK·Filed 2016·Granted Jan 30, 2018·15 cites·43 claims
- 1594US8994131B2Magnetic memoryTOSHIBA KK·Filed 2013·Granted Mar 31, 2015·21 cites·19 claims
- 1694US8981507B2Method for manufacturing nonvolatile memory deviceTAKAHASHI SHIGEKI·Filed 2012·Granted Mar 17, 2015·13 cites·21 claims
- 1794US5780176AMagnetoresistance effect elementTOSHIBA KK·Filed 1996·Granted Jul 14, 1998·74 cites·23 claims
- 1894US5304975AMagnetoresistance effect element and magnetoresistance effect sensorTOSHIBA KK·Filed 1992·Granted Apr 19, 1994·117 cites·21 claims
- 1993US5905611AThin film magnetic head responsive to spin-dependent scatteringTOSHIBA KK·Filed 1997·Granted May 18, 1999·66 cites·18 claims
- 2093US5576915AMagnetoresistive head with antiferromagnetic sublayers interposed between first and second spin-valve units to exchange bias inner magnetic films thereofTOSHIBA KK·Filed 1995·Granted Nov 19, 1996·75 cites·8 claims
- 2192US6956766B2Magnetic cell and magnetic memoryTOSHIBA KK·Filed 2003·Granted Oct 18, 2005·47 cites·23 claims
- 2292US6172858B1Thin film headTOSHIBA KK·Filed 2000·Granted Jan 9, 2001·29 cites·15 claims
- 2391US5329413AMagnetoresistance sensor magnetically coupled with high-coercive force film at two end regionsTOSHIBA KK·Filed 1993·Granted Jul 12, 1994·55 cites·14 claims
- 2490US10170694B1Magnetic memoryTOSHIBA KK·Filed 2018·Granted Jan 1, 2019·10 cites·9 claims
- 2590US10103199B2Magnetic memoryTOSHIBA KK·Filed 2017·Granted Oct 16, 2018·9 cites·12 claims
- 2690US9916882B2Magnetic memoryTOSHIBA KK·Filed 2016·Granted Mar 13, 2018·6 cites·21 claims
- 2790US7323258B2Magnetic recording medium and method for manufacturing the sameTOSHIBA KK·Filed 2004·Granted Jan 29, 2008·29 cites·13 claims
- 2890US7126848B2Magnetic cell and magnetic memoryTOSHIBA KK·Filed 2005·Granted Oct 24, 2006·17 cites·21 claims
- 2990US5725963AMagnetoresistance effect elementTOSHIBA KK·Filed 1996·Granted Mar 10, 1998·40 cites·14 claims
- 3089US6046891AThin film headTOSHIBA KK·Filed 1998·Granted Apr 4, 2000·43 cites·22 claims
- 3189US5738946AMagnetoresistance effect elementTOSHIBA KK·Filed 1996·Granted Apr 14, 1998·39 cites·10 claims
- 3288US10147473B2Magnetic memoryTOSHIBA KK·Filed 2017·Granted Dec 4, 2018·7 cites·22 claims
- 3388US6157525AMagnetic headTOSHIBA KK·Filed 1999·Granted Dec 5, 2000·48 cites·18 claims
- 3488US5946167AMagnetoresistive sensor having lead and/or bias layer structure contributing to a narrow gapTOSHIBA KK·Filed 1997·Granted Aug 31, 1999·53 cites·19 claims
- 3587US10096770B2Magnetic memory device and method for manufacturing the sameTOSHIBA KK·Filed 2017·Granted Oct 9, 2018·7 cites·21 claims
- 3687US7372727B2Magnetic cell and magnetic memoryTOSHIBA KK·Filed 2006·Granted May 13, 2008·13 cites·20 claims
- 3787US7240419B2Method of manufacturing a magnetoresistance effect elementTOSHIBA KK·Filed 2004·Granted Jul 10, 2007·14 cites·3 claims
- 3887US6757143B2Magnetoresistive effect element, its manufacturing method, magnetic head, magnetic reproducing apparatus, and magnetic memoryTOKYO SHIBAURA ELECTRIC CO·Filed 2002·Granted Jun 29, 2004·30 cites·19 claims
- 3987US6159593AMagnetoresistance effect elementTOSHIBA KK·Filed 1998·Granted Dec 12, 2000·39 cites·57 claims
- 4087US5688605AMagnetoresistance effect elementTOSHIBA KK·Filed 1996·Granted Nov 18, 1997·33 cites·11 claims
- 4186US9966122B2Magnetic memory deviceTOSHIBA KK·Filed 2017·Granted May 8, 2018·6 cites·16 claims
- 4286US8077509B2Magnetic memoryYANAGI SATOSHI·Filed 2009·Granted Dec 13, 2011·19 cites·16 claims
- 4386US5991125AMagnetic headTOSHIBA KK·Filed 1997·Granted Nov 23, 1999·42 cites·5 claims
- 4483US8716034B2Method of manufacturing magnetic memoryOHSAWA YUICHI·Filed 2011·Granted May 6, 2014·7 cites·26 claims
- 4583US5777542AMagnetoresistance effect device and manufacturing method thereofTOSHIBA KK·Filed 1996·Granted Jul 7, 1998·38 cites·10 claims
- 4682US7889543B2Magnetic memory element and magnetic memory apparatusTOSHIBA KK·Filed 2009·Granted Feb 15, 2011·15 cites·6 claims
- 4782US7265950B2Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memoryTOSHIBA KK·Filed 2004·Granted Sep 4, 2007·10 cites·11 claims
- 4881US10361358B2Spin orbit torque (SOT) MRAM having a source line connected to a spin orbit conductive layer and arranged above a magnetoresistive elementTOSHIBA KK·Filed 2017·Granted Jul 23, 2019·3 cites·10 claims
- 4981US6368706B1Magnetoresistance effect elementTOSHIBA KK·Filed 1998·Granted Apr 9, 2002·27 cites·31 claims
- 5080US9793469B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2016·Granted Oct 17, 2017·3 cites·19 claims
Showing the top 50 of 116 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →