Inventor · disambiguated record
Yukihito Oowaki
Also filed as: OOWAKI YUKIHITO · OWAKI YUKIHIDO
79 granted patents·1 pending application·2,317 citations·filing 1988–2011
99Inventor score
Top patents by PatentIndex Score
80 records- 0197US6087893ASemiconductor integrated circuit having suppressed leakage currentsTOSHIBA CORP·Filed 1997·Granted Jul 11, 2000·110 cites·9 claims
- 0297US6040610ASemiconductor deviceTOSHIBA KK·Filed 1998·Granted Mar 21, 2000·206 cites·25 claims
- 0396US6392467B1Semiconductor integrated circuitTOSHIBA CORP·Filed 2000·Granted May 21, 2002·83 cites·10 claims
- 0495US6483737B2Ferroelectric memory deviceTOSHIBA KK·Filed 2001·Granted Nov 19, 2002·119 cites·25 claims
- 0595US6323525B1MISFET semiconductor device having relative impurity concentration levels between layersTOSHIBA KK·Filed 1998·Granted Nov 27, 2001·217 cites·25 claims
- 0694US6906944B2Ferroelectric memoryTOSHIBA KK·Filed 2003·Granted Jun 14, 2005·73 cites·7 claims
- 0791US6278165B1MIS transistor having a large driving current and method for producing the sameTOSHIBA KK·Filed 1999·Granted Aug 21, 2001·72 cites·7 claims
- 0889US5062079AMOS type random access memory with interference noise eliminatorTOSHIBA KK·Filed 1989·Granted Oct 29, 1991·57 cites·10 claims
- 0988US6473330B1Chain type ferroelectric memory with isolation transistors coupled between a sense amplifier and an equalization circuitTOSHIBA KK·Filed 2000·Granted Oct 29, 2002·32 cites·16 claims
- 1088US5953246ASemiconductor memory device such as a DRAM capable of holding data without refreshTOSHIBA KK·Filed 1997·Granted Sep 14, 1999·71 cites·21 claims
- 1188US5307315AIntegrated semiconductor memory with internal voltage booster of lesser dependency on power supply voltageTOSHIBA KK·Filed 1991·Granted Apr 26, 1994·64 cites·12 claims
- 1285US6643162B2Ferroelectric memory having a device responsive to current loweringTOSHIBA KK·Filed 2001·Granted Nov 4, 2003·34 cites·8 claims
- 1385US5838038ADynamic random access memory device with the combined open/folded bit-line pair arrangementTOSHIBA KK·Filed 1995·Granted Nov 17, 1998·60 cites·14 claims
- 1482US6510071B2Ferroelectric memory having memory cell array accessibility safeguardsTOSHIBA KK·Filed 2001·Granted Jan 21, 2003·30 cites·22 claims
- 1582US5497351ARandom access memory with divided memory banks and data read/write architecture thereforTOSHIBA KK·Filed 1994·Granted Mar 5, 1996·32 cites·29 claims
- 1680US5761109ASemiconductor memory device having folded bit line array and an open bit line array with imbalance correctionTOSHIBA KK·Filed 1996·Granted Jun 2, 1998·46 cites·25 claims
- 1780US5463577ASemiconductor memoryTOSHIBA KK·Filed 1994·Granted Oct 31, 1995·45 cites·27 claims
- 1879US6349395B2Configurable integrated circuit and method of testing the sameTOSHIBA KK·Filed 1998·Granted Feb 19, 2002·43 cites·16 claims
- 1976US6157997AProcessor and information processing apparatus with a reconfigurable circuitTOSHIBA KK·Filed 1998·Granted Dec 5, 2000·77 cites·9 claims
- 2076US5969998AMOS semiconductor device with memory cells each having storage capacitor and transfer transistorTOSHIBA KK·Filed 1998·Granted Oct 19, 1999·26 cites·11 claims
- 2176US5892724ANAND-type dynamic RAM having temporary storage register and sense amplifier coupled to multi-open bit linesTOSHIBA KK·Filed 1997·Granted Apr 6, 1999·32 cites·10 claims
- 2275US6295241B1Dynamic random access memory deviceTOSHIBA KK·Filed 1994·Granted Sep 25, 2001·35 cites·15 claims
- 2375US5499209AIntegrated semiconductor memory with internal voltage booster of lesser dependency on power supply voltageTOSHIBA KK·Filed 1995·Granted Mar 12, 1996·32 cites·9 claims
- 2474US5867040AIntegrated circuit with stacked sub-circuits between Vcc and ground so as to conserve power and reduce the voltage across any one transistorTOSHIBA KK·Filed 1996·Granted Feb 2, 1999·35 cites·15 claims
- 2573US6147918ADynamic semiconductor memory device having an improved sense amplifier layout arrangementTOSHIBA KK·Filed 1998·Granted Nov 14, 2000·25 cites·9 claims
- 2672US7236035B2Semiconductor device adapted to minimize clock skewTOSHIBA KK·Filed 2004·Granted Jun 26, 2007·17 cites·19 claims
- 2772US6671200B2Ferroelectric random access memory with isolation transistors coupled between a sense amplifier and an equalization circuitTOSHIBA KK·Filed 2003·Granted Dec 30, 2003·12 cites·15 claims
- 2871US8269346B2Semiconductor device and method of designing a wiring of a semiconductor deviceSETA SHOJI·Filed 2011·Granted Sep 18, 2012·4 cites·12 claims
- 2971US6342408B1Method of manufacturing semiconductor memory deviceTOSHIBA KK·Filed 2000·Granted Jan 29, 2002·12 cites·13 claims
- 3070US7295456B2Chain ferroelectric random access memory (CFRAM) having an intrinsic transistor connected in parallel with a ferroelectric capacitorTOSHIBA KK·Filed 2006·Granted Nov 13, 2007·4 cites·5 claims
- 3170US7057917B2Ferroelectric memory with an intrinsic access transistor coupled to a capacitorTOSHIBA KK·Filed 2003·Granted Jun 6, 2006·10 cites·6 claims
- 3270US6366490B1Semiconductor memory device using ferroelectric filmTOSHIBA KK·Filed 2001·Granted Apr 2, 2002·17 cites·20 claims
- 3370US5062077ADynamic type semiconductor memory deviceTOSHIBA KK·Filed 1990·Granted Oct 29, 1991·30 cites·21 claims
- 3468US6084453AClock converting circuitTOSHIBA KK·Filed 1998·Granted Jul 4, 2000·22 cites·14 claims
- 3567US6545323B2Semiconductor memory device including a pair of MOS transistors forming a detection circuitTOSHIBA KK·Filed 2001·Granted Apr 8, 2003·9 cites·34 claims
- 3667US6130461ASemiconductor memory deviceTOSHIBA KK·Filed 1999·Granted Oct 10, 2000·18 cites·7 claims
- 3767US5222038ADynamic random access memory with enhanced sense-amplifier circuitTOSHIBA KK·Filed 1991·Granted Jun 22, 1993·27 cites·17 claims
- 3864US6522569B2Semiconductor memory deviceTOSHIBA KK·Filed 2001·Granted Feb 18, 2003·13 cites·23 claims
- 3964US5144583ADynamic semiconductor memory device with twisted bit-line structureTOSHIBA KK·Filed 1990·Granted Sep 1, 1992·33 cites·15 claims
- 4063US7303965B2MIS transistor and method for producing sameTOSHIBA KK·Filed 2001·Granted Dec 4, 2007·8 cites·18 claims
- 4163US6611450B2Ferroelectric random access memoryTOSHIBA KK·Filed 2002·Granted Aug 26, 2003·13 cites·43 claims
- 4263US6522589B1Semiconductor apparatus and mode setting method for semiconductor apparatusTOSHIBA KK·Filed 2001·Granted Feb 18, 2003·11 cites·46 claims
- 4363US5859805ADynamic semiconductor memory device having an improved sense amplifier layout arrangementTOSHIBA KK·Filed 1997·Granted Jan 12, 1999·17 cites·7 claims
- 4463US5299154AMOS semiconductor device with memory cells each having storage capacitor and transfer transistorTOSHIBA KK·Filed 1992·Granted Mar 29, 1994·15 cites·26 claims
- 4562US5644525ADynamic semiconductor memory device having an improved sense amplifier layout arrangementTOSHIBA KK·Filed 1994·Granted Jul 1, 1997·16 cites·10 claims
- 4661US7487370B2Semiconductor device and systemTOSHIBA KK·Filed 2005·Granted Feb 3, 2009·2 cites·2 claims
- 4761US5625602ANAND-type dynamic RAM having temporary storage register and sense amplifier coupled to multi-open bit linesTOSHIBA KK·Filed 1995·Granted Apr 29, 1997·18 cites·6 claims
- 4860US5895956ASemiconductor memory deviceTOSHIBA KK·Filed 1995·Granted Apr 20, 1999·14 cites·24 claims
- 4960US5661678ASemiconductor memory device using dynamic type memory cellsTOSHIBA KK·Filed 1995·Granted Aug 26, 1997·20 cites·16 claims
- 5060US5654912ASemiconductor memory device with reduced read time and power consumptionTOSHIBA KK·Filed 1995·Granted Aug 5, 1997·20 cites·11 claims
Showing the top 50 of 80 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →