Inventor · disambiguated record
Yu-Hwan Ro
Also filed as: RO YU HWAN
14 granted patents·264 citations·filing 2005–2011
93Inventor score
Top patents by PatentIndex Score
14 records- 0198US7808815B2Variable resistance memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 5, 2010·72 cites·9 claims
- 0294US7522449B2Phase change memory device and related programming methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 21, 2009·35 cites·20 claims
- 0393US7486536B2Phase-changeable memory device and method of programming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 3, 2009·31 cites·37 claims
- 0492US7391644B2Phase-changeable memory device and read method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 24, 2008·29 cites·22 claims
- 0590US8243542B2Resistance variable memory devices and read methods thereofBAE JUNSOO·Filed 2010·Granted Aug 14, 2012·59 cites·20 claims
- 0675US7499316B2Phase change memory devices and program methodsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 3, 2009·9 cites·11 claims
- 0769US7573766B2Phase change random access memory and method of testing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 11, 2009·7 cites·22 claims
- 0866US8305806B2Nonvolatile memory device and method for controlling word line or bit line thereofCHOI JOON-YONG·Filed 2010·Granted Nov 6, 2012·4 cites·9 claims
- 0966US7885098B2Non-volatile phase-change memory device and method of reading the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 8, 2011·6 cites·36 claims
- 1064US7817479B2Nonvolatile memory device using a variable resistive element and associated operating methodSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 19, 2010·5 cites·20 claims
- 1161US7668007B2Memory system including a resistance variable memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 23, 2010·4 cites·8 claims
- 1254US8250289B2Phase-change random access memory and method of setting boot block thereinRO YU-HWAN·Filed 2009·Granted Aug 21, 2012·3 cites·19 claims
- 1344US8116129B2Variable resistance memory device and method of manufacturing the sameRO YU-HWAN·Filed 2010·Granted Feb 14, 2012·0 cites·11 claims
- 1439US8837234B2Voltage control method to minimize a coupling noise between adjacent global bit lines during read-while operation and memory device using the sameRO YU HWAN·Filed 2011·Granted Sep 16, 2014·0 cites·20 claims
Join the waitlist — get patent alerts
Get an alert when Yu-Hwan Ro files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →