Inventor · disambiguated record
Yunheub Song
Also filed as: SONG YUNHEUB
7 granted patents·5 pending applications·7 citations·filing 1996–2025
74Inventor score
Top patents by PatentIndex Score
12 records- 0182US2025308590A1Three-dimensional flash memory and operation method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0280US12354661B2Three-dimensional flash memory and operation method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·20 claims
- 0365US11844215B2Three-dimensional flash memory device supporting bulk erase operation and manufacturing method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 12, 2023·1 cites·11 claims
- 0459US11901008B2Three-dimensional flash memory and operation method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 13, 2024·0 cites·20 claims
- 0559US11848049B2Phase-change memory device for improving resistance drift and dynamic resistance drift compensation method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 19, 2023·0 cites·20 claims
- 0657US12120872B2Three-dimensional flash memory having improved degree of integration, and manufacturing method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 15, 2024·0 cites·20 claims
- 0755US2024130136A1Semiconductor memory device and method for fabricating the sameIUCF HYU·Filed 2023·Application pending·0 cites
- 0850US11410722B2Phase-change memory device for improving resistance drift and dynamic resistance drift compensation method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 9, 2022·0 cites·14 claims
- 0948US2022101141A1Neural network devices based on phase change materialSAMSUNG ELECTRONICS CO LTD·Filed 2020·Application pending·0 cites
- 1046US2024196624A1Method of manufacturing ferroelectric-based 3-dimensional flash memorySAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1141US2022149073A1Three-dimensional flash memory and method for manufacturing sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Application pending·0 cites
- 1234US5717253AStructure for forming an improved quality silicidation layerSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Feb 10, 1998·6 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →