Inventor · disambiguated record
Yu Sun
Also filed as: SUN YU · Sun yu tao
100 granted patents·5 pending applications·2,397 citations·filing 1994–2023
99Inventor score
Files withADVANCED MICRO DEVICES INC80SPANSION LLC13CYPRESS SEMICONDUCTOR CORP3FUJITSU LTD2CHEUNG FRED1
Top patents by PatentIndex Score
105 records- 0197US6529412B1Source side sensing scheme for virtual ground read of flash eprom array with adjacent bit prechargeADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 4, 2003·178 cites·15 claims
- 0295US6004862ACore array and periphery isolation techniqueADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 21, 1999·219 cites·8 claims
- 0394US6509232B1Formation of STI (shallow trench isolation) structures within core and periphery areas of flash memory deviceADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 21, 2003·65 cites·20 claims
- 0493US6995437B1Semiconductor device with core and periphery regionsADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 7, 2006·69 cites·8 claims
- 0593US6566736B1Die seal for semiconductor device moisture protectionADVANCED MICRO DEVICES INC·Filed 2001·Granted May 20, 2003·81 cites·20 claims
- 0693US6271087B1Method for forming self-aligned contacts and local interconnects using self-aligned local interconnectsADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 7, 2001·74 cites·18 claims
- 0792US6780708B1Method of forming core and periphery gates including two critical masking steps to form a hard mask in a core region that includes a critical dimension less than achievable at a resolution limit of lithographyADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 24, 2004·57 cites·13 claims
- 0892US6630384B1Method of fabricating double densed core gates in sonos flash memoryADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 7, 2003·57 cites·22 claims
- 0992US6566194B1Salicided gate for virtual ground arraysADVANCED MICRO DEVICES INC·Filed 2001·Granted May 20, 2003·53 cites·10 claims
- 1092US6440797B1Nitride barrier layer for protection of ONO structure from top oxide loss in a fabrication of SONOS flash memoryADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 27, 2002·104 cites·20 claims
- 1190US6680509B1Nitride barrier layer for protection of ONO structure from top oxide loss in fabrication of SONOS flash memoryADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 20, 2004·80 cites·19 claims
- 1290US6583009B1Innovative narrow gate formation for floating gate flash technologyADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 24, 2003·46 cites·4 claims
- 1387US6664191B1Non self-aligned shallow trench isolation process with disposable space to define sub-lithographic poly spaceADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 16, 2003·38 cites·29 claims
- 1487US6346467B1Method of making tungsten gate MOS transistor and memory cell by encapsulatingADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 12, 2002·43 cites·17 claims
- 1586US6645801B1Salicided gate for virtual ground arraysADVANCED MICRO DEVICES INC·Filed 2001·Granted Nov 11, 2003·46 cites·30 claims
- 1686US6420752B1Semiconductor device with self-aligned contacts using a liner oxide layerADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 16, 2002·37 cites·7 claims
- 1786US5793677AUsing floating gate devices as select gate devices for NAND flash memory and its bias schemeFiled 1996·Granted Aug 11, 1998·65 cites·10 claims
- 1885US6124608ANon-volatile trench semiconductor device having a shallow drain regionADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 26, 2000·68 cites·28 claims
- 1984US6306713B1Method for forming self-aligned contacts and local interconnects for salicided gates using a secondary spacerADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 23, 2001·40 cites·20 claims
- 2083US6482699B1Method for forming self-aligned contacts and local interconnects using decoupled local interconnect processADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 19, 2002·37 cites·18 claims
- 2182US6266275B1Dual source side polysilicon select gate structure and programming method utilizing single tunnel oxide for nand array flash memoryADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 24, 2001·41 cites·8 claims
- 2282US5612249APost-gate LOCOSADVANCED MICRO DEVICES INC·Filed 1996·Granted Mar 18, 1997·53 cites·18 claims
- 2381US5933730AMethod of spacer formation and source protection after self-aligned source is formed and a device provided by such a methodADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 3, 1999·37 cites·7 claims
- 2480US6475847B1Method for forming a semiconductor device with self-aligned contacts using a liner oxide layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 5, 2002·26 cites·17 claims
- 2580US6001713AMethods for forming nitrogen-rich regions in a floating gate and interpoly dielectric layer in a non-volatile semiconductor memory deviceADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 14, 1999·48 cites·11 claims
- 2680US5912489ADual source side polysilicon select gate structure utilizing single tunnel oxide for NAND array flash memoryADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 15, 1999·38 cites·4 claims
- 2779US6429108B1Non-volatile memory device with encapsulated tungsten gate and method of making sameADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 6, 2002·28 cites·19 claims
- 2879US5907781AProcess for fabricating an integrated circuit with a self-aligned contactADVANCED MICRO DEVICES INC·Filed 1998·Granted May 25, 1999·59 cites·20 claims
- 2978US6808992B1Method and system for tailoring core and periphery cells in a nonvolatile memorySPANSION LLC·Filed 2002·Granted Oct 26, 2004·24 cites·16 claims
- 3078US6727143B1Method and system for reducing charge gain and charge loss when using an ARC layer in interlayer dielectric formationADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 27, 2004·19 cites·7 claims
- 3178US5470773AMethod protecting a stacked gate edge in a semiconductor device from self aligned source (SAS) etchADVANCED MICRO DEVICES INC·Filed 1994·Granted Nov 28, 1995·26 cites·8 claims
- 3277US7303964B2Self-aligned STI SONOSSPANSION LLC·Filed 2005·Granted Dec 4, 2007·8 cites·21 claims
- 3373US6002151ANon-volatile trench semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 14, 1999·35 cites·3 claims
- 3472US7307002B2Non-critical complementary masking method for poly-1 definition in flash memory device fabricationSPANSION LLC·Filed 2005·Granted Dec 11, 2007·4 cites·10 claims
- 3572US6348379B1Method of forming self-aligned contacts using consumable spacersADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 19, 2002·17 cites·6 claims
- 3670US7060564B1Memory device and method of simultaneous fabrication of core and periphery of sameADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 13, 2006·12 cites·18 claims
- 3770US5972751AMethods and arrangements for introducing nitrogen into a tunnel oxide in a non-volatile semiconductor memory deviceADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 26, 1999·24 cites·7 claims
- 3869US7202540B2Semiconductor memory deviceADVANCED MICRO DEVICES INC·Filed 2005·Granted Apr 10, 2007·8 cites·8 claims
- 3967US6509229B1Method for forming self-aligned contacts using consumable spacersADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 21, 2003·12 cites·24 claims
- 4066US6927129B1Narrow wide spacerADVANCED MICRO DEVICES INC·Filed 2004·Granted Aug 9, 2005·12 cites·23 claims
- 4165US7977218B2Thin oxide dummy tiling as charge protectionSPANSION LLC·Filed 2006·Granted Jul 12, 2011·3 cites·20 claims
- 4265US6444539B1Method for producing a shallow trench isolation filled with thermal oxideADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 3, 2002·10 cites·15 claims
- 4365US6359307B1Method for forming self-aligned contacts and interconnection lines using dual damascene techniquesADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 19, 2002·13 cites·5 claims
- 4464US7632749B1Semiconductor device having a pad metal layer and a lower metal layer that are electrically coupled, whereas apertures are formed in the lower metal layer below a center area of the pad metal layerSPANSION LLC·Filed 2004·Granted Dec 15, 2009·11 cites·5 claims
- 4564US6989319B1Methods for forming nitrogen-rich regions in non-volatile semiconductor memory devicesADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 24, 2006·11 cites·12 claims
- 4664US6403420B1Nitrogen implant after bit-line formation for ONO flash memory devicesADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 11, 2002·9 cites·16 claims
- 4763US6040597AIsolation boundaries in flash memory coresADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 21, 2000·29 cites·11 claims
- 4862US6509604B1Nitridation barriers for nitridated tunnel oxide for circuitry for flash technology and for LOCOS/STI isolationADVANCED MICRO DEVICES INC·Filed 2000·Granted Jan 21, 2003·15 cites·9 claims
- 4961US6252276B1Non-volatile semiconductor memory device including assymetrically nitrogen doped gate oxideADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 26, 2001·16 cites·6 claims
- 5060US5966618AMethod of forming dual field isolation structuresADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 12, 1999·25 cites·20 claims
Showing the top 50 of 105 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →