Inventor · disambiguated record
Yuan-Chen Sun
Also filed as: SUN YUAN · SUN YUAN-CHEN
48 granted patents·8 pending applications·1,097 citations·filing 1990–2024
98Inventor score
Files withGLOBALFOUNDRIES SG PTE LTD19TAIWAN SEMICONDUCTOR MFG CO LTD13IBM7TAIWAN SEMICONDUCTOR MFG5WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD5
Top patents by PatentIndex Score
56 records- 0199US5461250ASiGe thin film or SOI MOSFET and method for making the sameIBM·Filed 1992·Granted Oct 24, 1995·386 cites·18 claims
- 0298US9614086B1Conformal source and drain contacts for multi-gate field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 4, 2017·27 cites·20 claims
- 0396US10164033B2Conformal source and drain contacts for multi-gate field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·12 cites·20 claims
- 0493US9646963B1Integrated circuits with capacitors and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted May 9, 2017·10 cites·14 claims
- 0591US10269791B2Field-effect transistors having transition metal dichalcogenide channels and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 23, 2019·5 cites·20 claims
- 0689US5689127AVertical double-gate field effect transistorIBM·Filed 1996·Granted Nov 18, 1997·71 cites·9 claims
- 0788US6020255ADual damascene interconnect process with borderless contactTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Feb 1, 2000·105 cites·32 claims
- 0888US5780327AVertical double-gate field effect transistorIBM·Filed 1997·Granted Jul 14, 1998·68 cites·10 claims
- 0987US7612364B2MOS devices with source/drain regions having stressed regions and non-stressed regionsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Nov 3, 2009·13 cites·14 claims
- 1087US6774463B1Superconductor gate semiconductor channel field effect transistorIBM·Filed 1992·Granted Aug 10, 2004·70 cites·1 claims
- 1187US5801444AMultilevel electronic structures containing copper layer and copper-semiconductor layersIBM·Filed 1996·Granted Sep 1, 1998·74 cites·14 claims
- 1287US2024371940A1Semiconductor device having dopant deactivation underneath gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1386US10157985B2MOSFET with selective dopant deactivation underneath gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 18, 2018·3 cites·20 claims
- 1485US10163979B2Selector-resistive random access memory cellGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Dec 25, 2018·4 cites·20 claims
- 1585US8759875B1Vertical nanowire based hetero-structure split gate memoryGLOBALFOUNDRIES SG PTE LTD·Filed 2012·Granted Jun 24, 2014·8 cites·20 claims
- 1683US5117271ALow capacitance bipolar junction transistor and fabrication process therforIBM·Filed 1990·Granted May 26, 1992·56 cites·20 claims
- 1781US5106767AProcess for fabricating low capacitance bipolar junction transistorIBM·Filed 1991·Granted Apr 21, 1992·56 cites·19 claims
- 1879US9406764B2Simple and cost-free MTP structureGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Aug 2, 2016·4 cites·20 claims
- 1979US6245639B1Method to reduce a reverse narrow channel effect for MOSFET devicesTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 12, 2001·47 cites·14 claims
- 2078US6083824ABorderless contactTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jul 4, 2000·56 cites·36 claims
- 2177US12068374B2Method of dopant deactivation underneath gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 20, 2024·0 cites·20 claims
- 2276US2022344330A1Field-Effect Transistors Having Transition Metal Dichalcogenide Channels and Methods of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2375US9818867B2Simple and cost-free MTP structureGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Nov 14, 2017·5 cites·20 claims
- 2475US9728721B2Resistive memory deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Aug 8, 2017·2 cites·22 claims
- 2575US9608081B2Simple and cost-free MTP structureGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Mar 28, 2017·4 cites·20 claims
- 2672US8048717B2Method and system for bonding 3D semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Nov 1, 2011·4 cites·18 claims
- 2771US9153662B2MOSFET with selective dopant deactivation underneath gateSATHAIYA DHANYAKUMAR MAHAVEER·Filed 2012·Granted Oct 6, 2015·2 cites·20 claims
- 2869US10381356B2Low power embedded one-time programmable (OTP) structuresGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Aug 13, 2019·1 cites·9 claims
- 2969US10186554B2Vertical random access memory with selectorsGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Jan 22, 2019·1 cites·20 claims
- 3067US11855141B2Local epitaxy nanofilms for nanowire stack GAA deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 3167US11410996B2Field-effect transistors having transition metal dichalcogenide channels and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 9, 2022·0 cites·20 claims
- 3267US10276582B2High coupling ratio split gate memory cellGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Apr 30, 2019·2 cites·23 claims
- 3365US10985246B2MOSFET with selective dopant deactivation underneath gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 20, 2021·0 cites·20 claims
- 3465US9735164B2Low power embedded one-time programmable (OTP) structuresGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Aug 15, 2017·1 cites·20 claims
- 3563US11164864B2Field-effect transistors having transition metal dichalcogenide channels and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 2, 2021·0 cites·16 claims
- 3663US11063128B2Conformal source and drain contacts for multi-gate field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 13, 2021·0 cites·20 claims
- 3763US2025133968A1Spin-orbit torque magnetoresistive memory structureNAT APPLIED RES LABORATORIES·Filed 2024·Application pending·0 cites
- 3858US11307453B2Display panel and display deviceWUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2019·Granted Apr 19, 2022·0 cites·10 claims
- 3958US11043556B2Local epitaxy nanofilms for nanowire stack GAA deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 22, 2021·0 cites·20 claims
- 4056US10804323B2Selector-resistive random access memory cellGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Oct 13, 2020·0 cites·14 claims
- 4154US10333065B2Resistive memory deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jun 25, 2019·0 cites·18 claims
- 4253US11287690B2Display panel and display deviceWUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2019·Granted Mar 29, 2022·0 cites·10 claims
- 4353US9978883B2Integrated circuits with capacitors and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted May 22, 2018·0 cites·20 claims
- 4452US12431364B2Method for manufacturing packaging enclosure and method for manufacturing packaging chipHUBEI YANGTZE PILOT LINE SERVICES CO LTD·Filed 2022·Granted Sep 30, 2025·0 cites·13 claims
- 4552US9123553B2Method and system for bonding 3D semiconductor deviceLIU CHUNG-SHI·Filed 2011·Granted Sep 1, 2015·0 cites·20 claims
- 4651US9397146B2Vertical random access memory with selectorsGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Jul 19, 2016·0 cites·20 claims
- 4748US12317592B2Display panel and display deviceWUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2021·Granted May 27, 2025·0 cites·19 claims
- 4846US10032771B2Integrated circuits with capacitors and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jul 24, 2018·0 cites·20 claims
- 4946US2024030232A1Display panel and display deviceWUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2021·Application pending·0 cites
- 5044US10453969B2Integrated circuits with memory cells and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Oct 22, 2019·0 cites·20 claims
Showing the top 50 of 56 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →