Inventor · disambiguated record
Yuji Takeuchi
Also filed as: TAKEUCHI YUJI
94 granted patents·11 pending applications·2,083 citations·filing 1974–2025
99Inventor score
Files withTOSHIBA KK68HONDA MOTOR CO LTD14SONY INTERACTIVE ENTERTAINMENT INC4BANDO CHEMICAL IND3DAIWA CAN CO LTD2
Top patents by PatentIndex Score
105 records- 0198US6555427B1Non-volatile semiconductor memory device and manufacturing method thereofTOSHIBA KK·Filed 2000·Granted Apr 29, 2003·138 cites·25 claims
- 0297US7498630B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2006·Granted Mar 3, 2009·52 cites·20 claims
- 0397US7245534B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2005·Granted Jul 17, 2007·63 cites·18 claims
- 0497US6870773B2Data writing method for semiconductor memory device and semiconductor memory deviceTOSHIBA KK·Filed 2004·Granted Mar 22, 2005·112 cites·18 claims
- 0597US6845042B2Nonvolatile semiconductor memory, fabrication method for the same, semiconductor integrated circuits and systemsTOSHIBA KK·Filed 2003·Granted Jan 18, 2005·149 cites·71 claims
- 0697US6353242B1Nonvolatile semiconductor memoryTOSHIBA KK·Filed 1999·Granted Mar 5, 2002·127 cites·22 claims
- 0796US6818508B2Non-volatile semiconductor memory device and manufacturing method thereofTOSHIBA KK·Filed 2003·Granted Nov 16, 2004·66 cites·5 claims
- 0895US6958938B2Data writing method for semiconductor memory device and semiconductor memory deviceTOSHIBA KK·Filed 2004·Granted Oct 25, 2005·78 cites·20 claims
- 0995US6720612B2Semiconductor deviceTOSHIBA KK·Filed 2002·Granted Apr 13, 2004·75 cites·44 claims
- 1095US6512253B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2001·Granted Jan 28, 2003·45 cites·20 claims
- 1195US5889304ANonvolatile semiconductor memory deviceTOSHIBA KK·Filed 1997·Granted Mar 30, 1999·165 cites·20 claims
- 1294US7049653B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2005·Granted May 23, 2006·18 cites·4 claims
- 1393US6894341B2Semiconductor device and manufacturing methodTOSHIBA KK·Filed 2002·Granted May 17, 2005·61 cites·16 claims
- 1493US6057580ASemiconductor memory device having shallow trench isolation structureTOSHIBA KK·Filed 1998·Granted May 2, 2000·91 cites·19 claims
- 1592US7595522B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2006·Granted Sep 29, 2009·17 cites·8 claims
- 1692US6835978B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2001·Granted Dec 28, 2004·43 cites·9 claims
- 1791US6853029B2Non-volatile semiconductor memory device with multi-layer gate structureTOSHIBA KK·Filed 2002·Granted Feb 8, 2005·58 cites·12 claims
- 1890US6160297ASemiconductor memory device having a first source line arranged between a memory cell string and bit lines in the direction crossing the bit lines and a second source line arranged in parallel to the bit linesTOSHIBA KK·Filed 1998·Granted Dec 12, 2000·119 cites·15 claims
- 1989US8167335B2Fender liner and process for producing the sameTAKEUCHI YUJI·Filed 2009·Granted May 1, 2012·15 cites·10 claims
- 2089US7939406B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2009·Granted May 10, 2011·9 cites·19 claims
- 2189US7122432B2Non-volatile semiconductor memory device and manufacturing method thereofTOSHIBA KK·Filed 2004·Granted Oct 17, 2006·29 cites·9 claims
- 2289US6798038B2Manufacturing method of semiconductor device with filling insulating film into trenchTOSHIBA KK·Filed 2002·Granted Sep 28, 2004·43 cites·1 claims
- 2388US7573092B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2006·Granted Aug 11, 2009·9 cites·15 claims
- 2486US7893477B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2007·Granted Feb 22, 2011·6 cites·20 claims
- 2586US6534867B1Semiconductor device, semiconductor element and method for producing sameTOSHIBA KK·Filed 2000·Granted Mar 18, 2003·34 cites·6 claims
- 2685US7425739B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2005·Granted Sep 16, 2008·6 cites·12 claims
- 2785US6974979B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2002·Granted Dec 13, 2005·17 cites·14 claims
- 2884US6784041B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Aug 31, 2004·23 cites·28 claims
- 2983US7352027B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2007·Granted Apr 1, 2008·6 cites·21 claims
- 3082US7449745B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2007·Granted Nov 11, 2008·5 cites·9 claims
- 3182US7371654B2Manufacturing method of semiconductor device with filling insulating film into trenchTOSHIBA KK·Filed 2006·Granted May 13, 2008·8 cites·8 claims
- 3281US7348627B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2006·Granted Mar 25, 2008·5 cites·12 claims
- 3380US7045423B2Non-volatile semiconductor memory device with multi-layer gate structureTOSHIBA KK·Filed 2004·Granted May 16, 2006·24 cites·4 claims
- 3478US7332762B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2006·Granted Feb 19, 2008·3 cites·15 claims
- 3578US7141474B2Fabrication method of a nonvolatile semiconductor memoryTOSHIBA KK·Filed 2004·Granted Nov 28, 2006·18 cites·2 claims
- 3677US7442985B2Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Oct 28, 2008·4 cites·4 claims
- 3777US7081386B2Semiconductor device and method of manufactuing the sameTOSHIBA KK·Filed 2004·Granted Jul 25, 2006·17 cites·16 claims
- 3876US12232234B2Entertainment apparatus, light emission controlling apparatus, operation device, light emission controlling method and programSONY INTERACTIVE ENTERTAINMENT INC·Filed 2023·Granted Feb 18, 2025·0 cites·6 claims
- 3976US8134199B2Nonvolatile semiconductor memoryTAKEUCHI YUJI·Filed 2010·Granted Mar 13, 2012·3 cites·15 claims
- 4076US7838404B2Method of fabricating a nonvolatile semiconductor memoryTOSHIBA KK·Filed 2009·Granted Nov 23, 2010·4 cites·7 claims
- 4176US6844590B2Semiconductor device with trench isolation between two regions having different gate insulating filmsTOSHIBA KK·Filed 2002·Granted Jan 18, 2005·20 cites·16 claims
- 4276US6611010B2Semiconductor deviceTOSHIBA KK·Filed 2000·Granted Aug 26, 2003·22 cites·55 claims
- 4375US6809967B2Data writing method for semiconductor memory device and semiconductor memory deviceTOSHIBA KK·Filed 2002·Granted Oct 26, 2004·18 cites·55 claims
- 4475US6157056ASemiconductor memory device having a plurality of memory cell transistors arranged to constitute memory cell arraysTOSHIBA KK·Filed 1998·Granted Dec 5, 2000·38 cites·20 claims
- 4574US11711878B2Entertainment apparatus, light emission controlling apparatus, operation device, light emission controlling method and programSONY INTERACTIVE ENTERTAINMENT INC·Filed 2022·Granted Jul 25, 2023·0 cites·14 claims
- 4674US8737134B2Nonvolatile semiconductor storage deviceSHIINO YASUHIRO·Filed 2012·Granted May 27, 2014·5 cites·18 claims
- 4774US8084802B2Nonvolatile semiconductor memoryWATANABE HIROSHI·Filed 2011·Granted Dec 27, 2011·2 cites·44 claims
- 4873US6921960B2Capacitor element with an opening portion formed in a peripheral circuitTOSHIBA KK·Filed 2001·Granted Jul 26, 2005·19 cites·27 claims
- 4973US6590255B2Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the sameTOSHIBA KK·Filed 2001·Granted Jul 8, 2003·11 cites·7 claims
- 5072US6927449B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2004·Granted Aug 9, 2005·9 cites·9 claims
Showing the top 50 of 105 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →