Inventor · disambiguated record
Yuuichi Tatsumi
Also filed as: TATSUMI YUUICHI
18 granted patents·1 pending application·358 citations·filing 1988–2022
94Inventor score
Top patents by PatentIndex Score
19 records- 0194US4916334AHigh voltage booster circuit for use in EEPROMsTOSHIBA KK·Filed 1988·Granted Apr 10, 1990·106 cites·14 claims
- 0272US4858192ASemiconductor memory device with redundancy circuitTOSHIBA KK·Filed 1988·Granted Aug 15, 1989·28 cites·7 claims
- 0371US5200926ASemiconductor integrated circuitTOSHIBA KK·Filed 1991·Granted Apr 6, 1993·32 cites·10 claims
- 0471US5138579ASemiconductor memory device having transfer gates which prevent high voltages from being applied to memory and dummy cells in the reading operationTOSHIBA KK·Filed 1990·Granted Aug 11, 1992·34 cites·35 claims
- 0570US4882507AOutput circuit of semiconductor integrated circuit deviceTOSHIBA KK·Filed 1988·Granted Nov 21, 1989·25 cites·24 claims
- 0664US8241999B2Semiconductor device having a protection pattern with two element separation regionsIKEDA TAKAFUMI·Filed 2010·Granted Aug 14, 2012·3 cites·5 claims
- 0764US4959816ASemiconductor integrated circuitTOSHIBA KK·Filed 1988·Granted Sep 25, 1990·17 cites·51 claims
- 0863US5056064ASemiconductor integrated circuitTOSHIBA KK·Filed 1990·Granted Oct 8, 1991·20 cites·41 claims
- 0963US5010520ANonvolatile semiconductor memory device with stabilized data write characteristicTOSHIBA KK·Filed 1988·Granted Apr 23, 1991·19 cites·21 claims
- 1062US4967394ASemiconductor memory device having a test cell arrayTOSHIBA KK·Filed 1988·Granted Oct 30, 1990·19 cites·31 claims
- 1154US6118699ASemiconductor memory device using MONOS type nonvolatile memory cellTOSHIBA KK·Filed 1999·Granted Sep 12, 2000·15 cites·15 claims
- 1253US12354972B2Semiconductor deviceKIOXIA CORP·Filed 2022·Granted Jul 8, 2025·0 cites·20 claims
- 1353US5175704ANonvolatile semiconductor memory deviceTOSHIBA KK·Filed 1990·Granted Dec 29, 1992·15 cites·34 claims
- 1450US11251122B2Semiconductor device having a bonding pad area of a first wiring layer overlaps a bonding pad electrode of a second wiring layerKIOXIA CORP·Filed 2020·Granted Feb 15, 2022·0 cites·16 claims
- 1548US6014443ASemiconductor memory device having copy protect function and method for accessing the sameTOSHIBA KK·Filed 1997·Granted Jan 11, 2000·22 cites·32 claims
- 1642US7655481B2Method for manufacturing industrial products and combination of masks for manufacturing the sameTOSHIBA KK·Filed 2006·Granted Feb 2, 2010·0 cites·20 claims
- 1738US6376295B1Method for manufacturing a semiconductor memory device with a fine structureTOSHIBA KK·Filed 2000·Granted Apr 23, 2002·3 cites·2 claims
- 1837US9842766B2Semiconductor device and method for fabricating semiconductor deviceTOSHIBA MEMORY CORP·Filed 2015·Granted Dec 12, 2017·0 cites·16 claims
- 1930US2016078940A1Nonvolatile semiconductor memory device and method of manufacturing nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2015·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Yuuichi Tatsumi files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →