Inventor · disambiguated record
Yuta Tezen
Also filed as: TEZEN YUTA
15 granted patents·464 citations·filing 1995–2005
94Inventor score
Top patents by PatentIndex Score
15 records- 0197US7491984B2Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devicesTOYODA GOSEI KK·Filed 2004·Granted Feb 17, 2009·170 cites·11 claims
- 0294US7462867B2Group III nitride compound semiconductor devices and method for fabricating the sameTOYODA GOSEI KK·Filed 2005·Granted Dec 9, 2008·27 cites·17 claims
- 0390US7052979B2Production method for semiconductor crystal and semiconductor luminous elementTOYODA GOSEI KK·Filed 2002·Granted May 30, 2006·56 cites·5 claims
- 0490US6631149B1Laser diode using group III nitride group compound semiconductorTOYODA GOSEI KK·Filed 2000·Granted Oct 7, 2003·33 cites·20 claims
- 0588US7560725B2Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devicesTOYODA GOSEI KK·Filed 2005·Granted Jul 14, 2009·11 cites·9 claims
- 0687US6861305B2Methods for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devicesTOYODA GOSEI KK·Filed 2001·Granted Mar 1, 2005·34 cites·30 claims
- 0782US7141444B2Production method of III nitride compound semiconductor and III nitride compound semiconductor elementTOYODA GOSEI KK·Filed 2001·Granted Nov 28, 2006·27 cites·10 claims
- 0879US6979584B2Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2000·Granted Dec 27, 2005·20 cites·18 claims
- 0978US6967122B2Group III nitride compound semiconductor and method for manufacturing the sameTOYODA GOSEI KK·Filed 2001·Granted Nov 22, 2005·19 cites·24 claims
- 1076US6855620B2Method for fabricating Group III nitride compound semiconductor substrates and semiconductor devicesTOYODA GOSEI KK·Filed 2001·Granted Feb 15, 2005·20 cites·22 claims
- 1174US6680957B1Group III nitride compound semiconductor laserTOYODA GOSEI KK·Filed 2000·Granted Jan 20, 2004·12 cites·21 claims
- 1272US6830948B2Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2000·Granted Dec 14, 2004·15 cites·6 claims
- 1345US5933443ASemiconductor laserROHM CO LTD·Filed 1996·Granted Aug 3, 1999·12 cites·2 claims
- 1443US6518599B2Light-emitting device using group III nitride group compound semiconductorTOYODA GOSEI KK·Filed 2000·Granted Feb 11, 2003·2 cites·49 claims
- 1535US5661581AOptical communication unitROHM CO LTD·Filed 1995·Granted Aug 26, 1997·6 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →