Inventor · disambiguated record
Yun-Jen Ting
Also filed as: TING YUN-JEN
10 granted patents·2 pending applications·19 citations·filing 2009–2023
84Inventor score
Top patents by PatentIndex Score
12 records- 0190US11508719B2Electrostatic discharge circuitEMEMORY TECHNOLOGY INC·Filed 2020·Granted Nov 22, 2022·3 cites·14 claims
- 0287US10546619B2Electrostatic discharge circuitEMEMORY TECHNOLOGY INC·Filed 2017·Granted Jan 28, 2020·4 cites·9 claims
- 0382US11462903B2Electrostatic discharge (ESD) circuit capable of protecting internal circuit from being affected by ESD zappingEMEMORY TECHNOLOGY INC·Filed 2020·Granted Oct 4, 2022·2 cites·12 claims
- 0482US11025054B2Electrostatic discharge protection deviceEMEMORY TECHNOLOGY INC·Filed 2019·Granted Jun 1, 2021·4 cites·11 claims
- 0573US12376294B2Electrostatic discharge circuitEMEMORY TECHNOLOGY INC·Filed 2023·Granted Jul 29, 2025·0 cites·13 claims
- 0673US10944258B2RC circuit triggered electrostatic discharge circuitEMEMORY TECHNOLOGY INC·Filed 2019·Granted Mar 9, 2021·2 cites·10 claims
- 0752US8369154B2Channel hot electron injection programming method and related deviceEMEMORY TECHNOLOGY INC·Filed 2010·Granted Feb 5, 2013·1 cites·21 claims
- 0852US2019165572A1Electrostatic discharge protection circuit with a high turn-on speedEMEMORY TECHNOLOGY INC·Filed 2018·Application pending·0 cites
- 0947US11616360B2Integrated circuit with capability of inhibiting ESD zapEMEMORY TECHNOLOGY INC·Filed 2021·Granted Mar 28, 2023·0 cites·8 claims
- 1045US8837219B2Method of programming nonvolatile memoryHSIAO KAI-YUAN·Filed 2012·Granted Sep 16, 2014·1 cites·15 claims
- 1142US8259504B2Method of programming/erasing the nonvolatile memoryTING YUN-JEN·Filed 2009·Granted Sep 4, 2012·2 cites·12 claims
- 1236US2018102642A1Electrostatic discharge circuitEMEMORY TECHNOLOGY INC·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →