Inventor · disambiguated record
Yu-Wei Ting
Also filed as: TING YU-WEI
56 granted patents·30 pending applications·214 citations·filing 2003–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD56NANYA TECHNOLOGY CORP14TAIWAN SEMICONDUCTOR MFG9TING YU-WEI3NANYA TECHONOLGY CORP1
Top patents by PatentIndex Score
86 records- 0197US8869436B2Resistive switching random access memory structure and method to recreate filament and recover resistance windowTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 28, 2014·40 cites·22 claims
- 0296US9019743B2Method and structure for resistive switching random access memory with high reliable and high densityTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Apr 28, 2015·15 cites·20 claims
- 0394US9634134B2Embedded transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 25, 2017·11 cites·20 claims
- 0492US10700070B2Embedded transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 30, 2020·5 cites·20 claims
- 0592US10103151B2Embedded transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 16, 2018·5 cites·20 claims
- 0691US9053781B2Structure and method for a forming free resistive random access memory with multi-level cellTAIWAN SEMICONDCUTOR MFG COMPANY LTD·Filed 2012·Granted Jun 9, 2015·22 cites·20 claims
- 0789US10748907B2Embedded transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 18, 2020·3 cites·20 claims
- 0884US9893122B2Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·3 cites·20 claims
- 0983US2025351378A1Phase change material switch circuit for enhanced signal isolation and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1082US9613965B2Embedded transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 4, 2017·3 cites·20 claims
- 1182US9230647B2Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 5, 2016·4 cites·20 claims
- 1282US2025342878A1Gain-cell random access memory with enhanced retentionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1381US9991368B2Vertical BJT for high density memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 5, 2018·4 cites·20 claims
- 1481US9361980B1RRAM array using multiple reset voltages and method of resetting RRAM array using multiple reset voltagesTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 7, 2016·6 cites·20 claims
- 1580US2025355289A1Optical device with phase-change materials and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1679US9178040B2Innovative approach of 4F2 driver formation for high-density RRAM and MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Nov 3, 2015·5 cites·19 claims
- 1779US2025344399A1Ferroelectric tunnel junction memory devices with enhanced read windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1878US2025365967A1Ferroelectric-based memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1976US7217581B2Misalignment test structure and method thereofNANYA TECHNOLOGY CORP·Filed 2006·Granted May 15, 2007·4 cites·8 claims
- 2075US12443061B2Optical device with phase-change materials and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
- 2175US2025169051A1Gate structure disposed between fin structures to decrease leakage in gain cell random access memory (gcram)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2274US12490503B2Voltage regulator having variable output capacitance and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 2, 2025·0 cites·20 claims
- 2374US10262731B2Device and method for forming resistive random access memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 16, 2019·3 cites·20 claims
- 2474US2025324564A1Gate structure disposed between fin structures to decrease leakage in gain cell random access memory (gcram)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2573US12453101B2Phase change material switch circuit for enhanced signal isolation and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 2673US8853021B2Embedded transistorTING YU-WEI·Filed 2011·Granted Oct 7, 2014·3 cites·20 claims
- 2771US12217924B2Heat controlled switchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 4, 2025·0 cites·20 claims
- 2871US2024389349A1Memory device structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2970US12268103B2Phase change material switch with improved thermal confinement and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 3070US10062735B2Innovative approach of 4F2 driver formation for high-density RRAM and MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 28, 2018·1 cites·20 claims
- 3170US7026647B2Device and method for detecting alignment of active areas and memory cell structures in DRAM devicesNANYA TECHNOLOGY CORP·Filed 2003·Granted Apr 11, 2006·11 cites·4 claims
- 3270US6693834B1Device and method for detecting alignment of bit lines and bit line contacts in DRAM devicesNANYA TECHNOLOGY CORP·Filed 2003·Granted Feb 17, 2004·13 cites·15 claims
- 3369US6902942B2Device and method for detecting alignment of deep trench capacitors and word lines in DRAM devicesNANYA TECHNOLOGY CORP·Filed 2003·Granted Jun 7, 2005·12 cites·12 claims
- 3468US12200943B2Memory device structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
- 3568US9472596B2Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 18, 2016·1 cites·20 claims
- 3668US2025204287A1Phase change material switch with improved thermal confinement and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3767US7381575B2Device and method for detecting alignment of active areas and memory cell structures in DRAM devicesNANYA TECHNOLOGY CORP·Filed 2005·Granted Jun 3, 2008·2 cites·3 claims
- 3867US6891216B1Test structure of DRAMNANYA TECHNOLOGY CORP·Filed 2003·Granted May 10, 2005·11 cites·13 claims
- 3967US2023389324A1Ferroelectric-based memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4066US9153672B2Vertical BJT for high density memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Oct 6, 2015·2 cites·20 claims
- 4166US2025166695A1Gain-cell random access memory with enhanced retentionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4264US12426272B2Ferroelectric tunnel junction memory devices with enhanced read windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 4364US2025182988A1Method for fabricating a heat controlled switchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4459US8552478B2Corner transistor and method of fabricating the sameWU TIEH-CHIANG·Filed 2011·Granted Oct 8, 2013·1 cites·20 claims
- 4559US2024389486A1Capacitor circuit providing self-adjusting capacitance and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4658US2025142845A1Catalytic metal plate in a metal-insulator-metal capacitor and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4757US8953370B2Memory cell with decoupled read/write pathTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 10, 2015·1 cites·20 claims
- 4857US2024389487A1Direct non-ohmic switch for voltage instability protection and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4956US6946678B2Test key for validating the position of a word line overlaying a trench capacitor in DRAMsNANYA TECHNOLOGY CORP·Filed 2004·Granted Sep 20, 2005·4 cites·5 claims
- 5056US2025301621A1Asymmetrical capacitor having low leakage current and memory cell using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 86 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →