Inventor · disambiguated record
Yusuke Tsukada
Also filed as: TSUKADA YUSUKE
15 granted patents·4 pending applications·26 citations·filing 2007–2024
89Inventor score
Files withMITSUBISHI CHEM CORP15EGASHIRA KENSUKE1HOSOKAWA MICRON KK1MORISHITA RYUICHI1UNIV CALIFORNIA1
Top patents by PatentIndex Score
19 records- 0191US11038024B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2019·Granted Jun 15, 2021·4 cites·19 claims
- 0291US10475887B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2016·Granted Nov 12, 2019·5 cites·15 claims
- 0389US11031475B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2019·Granted Jun 8, 2021·3 cites·18 claims
- 0489US10655244B2GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2018·Granted May 19, 2020·2 cites·19 claims
- 0589US10066319B2GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2016·Granted Sep 4, 2018·6 cites·13 claims
- 0687US11664428B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2021·Granted May 30, 2023·1 cites·13 claims
- 0783US12107129B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2023·Granted Oct 1, 2024·0 cites·21 claims
- 0877US7897751B2Pharmaceutical preparationHOSOKAWA MICRON KK·Filed 2007·Granted Mar 1, 2011·3 cites·12 claims
- 0972US10734485B2Gallium nitride substrate and manufacturing method of nitride semiconductor crystalMITSUBISHI CHEM CORP·Filed 2017·Granted Aug 4, 2020·1 cites·17 claims
- 1068US11670687B2Gallium nitride substrate and manufacturing method of nitride semiconductor crystalMITSUBISHI CHEM CORP·Filed 2020·Granted Jun 6, 2023·0 cites·15 claims
- 1168US9673046B2Gallium nitride substrate and manufacturing method of nitride semiconductor crystalMITSUBISHI CHEM CORP·Filed 2015·Granted Jun 6, 2017·1 cites·18 claims
- 1261US2025122642A1GaN CRYSTAL AND GaN WAFERMITSUBISHI CHEM CORP·Filed 2024·Application pending·0 cites
- 1360US11236439B2Non-polar or semi-polar GaN waferMITSUBISHI CHEM CORP·Filed 2019·Granted Feb 1, 2022·0 cites·8 claims
- 1454US12230678B2III-N based material structures, methods, devices and circuit modules based on strain managementUNIV CALIFORNIA·Filed 2019·Granted Feb 18, 2025·0 cites·20 claims
- 1554US2023203711A1Gan crystal and gan substrateMITSUBISHI CHEM CORP·Filed 2023·Application pending·0 cites
- 1649US10612161B2GaN substrateMITSUBISHI CHEM CORP·Filed 2017·Granted Apr 7, 2020·0 cites·15 claims
- 1749US2018142376A1NON-POLAR OR SEMI-POLAR GaN WAFERMITSUBISHI CHEM CORP·Filed 2018·Application pending·0 cites
- 1844US9186439B2Drug-eluting catheter and method of manufacturing the sameMORISHITA RYUICHI·Filed 2009·Granted Nov 17, 2015·0 cites·25 claims
- 1927US2012213838A1Medical device for placement into a lumen and manufacturing method thereofEGASHIRA KENSUKE·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →