Inventor · disambiguated record
Yuan-Tien Tu
Also filed as: TU YUAN-TIEN
27 granted patents·18 pending applications·23 citations·filing 2010–2025
93Inventor score
Top patents by PatentIndex Score
45 records- 0197US11818967B2Sidewall protection for PCRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·2 cites·20 claims
- 0296US11996321B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 28, 2024·4 cites·20 claims
- 0396US11664272B2Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·3 cites·20 claims
- 0493US11961893B2Contacts for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 16, 2024·2 cites·20 claims
- 0588US12336192B2Method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 0687US8822283B2Self-aligned insulated film for high-k metal gate deviceNG JIN-AUN·Filed 2011·Granted Sep 2, 2014·7 cites·20 claims
- 0787US2025366018A1Etch profile control of via openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0887US2025366382A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0986US12245526B2Sidewall protection for PCRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 1085US2025351501A1Contacts for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1184US11362277B2Sidewall protection for PCRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 14, 2022·2 cites·20 claims
- 1284US2025338594A1Conductive capping for work function layer and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1382US12041790B2Semiconductor device, memory cell and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·0 cites·20 claims
- 1481US12349395B2Inter block for recessed contacts and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 1581US12107003B2Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
- 1680US2025301694A1Inter block for recessed contacts and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1779US2024395607A1Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1878US2024373764A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1978US2025359262A1Connection between gate and source/drain featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2078US2024371956A1Conductive capping for work function layer and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2177US2025176443A1Sidewall protection for pcram deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2277US2024250143A1Contacts for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2376US10388531B2Self-aligned insulated film for high-k metal gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 20, 2019·1 cites·20 claims
- 2475US2024387266A1Recessed contacts at line end and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2574US2024387656A1Semiconductor device interconnects and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2673US2023361185A1Etch profile control of via openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2772US12120968B2Semiconductor device, memory cell including connecting structure having base portion and pillar portion, and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 15, 2024·0 cites·20 claims
- 2872US11967622B2Inter block for recessed contacts and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 23, 2024·0 cites·20 claims
- 2972US2025096043A1Dielectric cap structure in semiconductor devices and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3071US12119386B2Conductive capping for work function layer and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 15, 2024·0 cites·20 claims
- 3171US11594576B2Semiconductor device, memory cell and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·0 cites·20 claims
- 3270US2024079409A1Semiconductor device structure with conductive via structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3369US11749732B2Etch profile control of via openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·0 cites·20 claims
- 3469US2023387227A1Semiconductor device interconnects and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3568US12107007B2Recessed contacts at line end and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 1, 2024·0 cites·20 claims
- 3665US12087832B2Semiconductor device interconnects and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 10, 2024·0 cites·20 claims
- 3765US11094545B2Self-aligned insulated film for high-K metal gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 17, 2021·0 cites·20 claims
- 3864US12183633B2Dielectric cap structure in semiconductor devices and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 31, 2024·0 cites·20 claims
- 3963US11810919B2Semiconductor device structure with conductive via structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
- 4062US8222136B2Method of forming contacts for a semiconductor deviceTU YUAN-TIEN·Filed 2010·Granted Jul 17, 2012·2 cites·20 claims
- 4158US12507600B2Phase change memory device wherein first and second electrodes penetrate through dielectric and phase change layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 23, 2025·0 cites·20 claims
- 4258US9779947B2Self-aligned insulated film for high-k metal gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·0 cites·20 claims
- 4357US9252224B2Self-aligned insulated film for high-k metal gate deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 2, 2016·0 cites·20 claims
- 4451US2023363177A1Feram device and method of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4548US12363947B2Structure and formation method of semiconductor device with contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 15, 2025·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →