Inventor · disambiguated record
Yu-Shiuan Wang
Also filed as: WANG YU-SHIUAN
7 granted patents·5 pending applications·35 citations·filing 2014–2025
81Inventor score
Top patents by PatentIndex Score
12 records- 0195US9230795B1Directional pre-clean in silicide and contact formationTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 5, 2016·24 cites·20 claims
- 0292US10535748B2Method of forming a contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·6 cites·20 claims
- 0386US9368357B2Directional pre-clean in silicide and contact formationTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 14, 2016·4 cites·20 claims
- 0485US2025287628A1Contact with a Silicide RegionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0579US12328890B2Contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
- 0677US2025357191A1Conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0777US2024332076A1Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0873US11031286B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 8, 2021·1 cites·20 claims
- 0971US2024379423A1Barrier layer for an interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1070US11411094B2Contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·0 cites·20 claims
- 1169US12046510B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·20 claims
- 1256US2025040213A1Semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →