Inventor · disambiguated record
Yu-Jen Wang
Also filed as: WANG YU · WANG YU-JEN
289 granted patents·65 pending applications·1,865 citations·filing 1999–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD126HEADWAY TECH INC22T MOBILE INNOVATIONS LLC22SPRINT SPECTRUM LP19WANG YU-JEN19
Top patents by PatentIndex Score
354 records- 0199US10043851B1Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etchingHEADWAY TECH INC·Filed 2017·Granted Aug 7, 2018·66 cites·20 claims
- 0299US8987849B2Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applicationsHEADWAY TECHNOLOGIES INC·Filed 2014·Granted Mar 24, 2015·35 cites·6 claims
- 0399US8860156B2Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAMBEACH ROBERT·Filed 2012·Granted Oct 14, 2014·88 cites·13 claims
- 0499US8852760B2Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layerWANG YU-JEN·Filed 2012·Granted Oct 7, 2014·97 cites·17 claims
- 0598US11800811B2MTJ CD variation by HM trimmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·4 cites·20 claims
- 0698US10418547B1Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 17, 2019·14 cites·20 claims
- 0798US9472752B2High thermal stability reference structure with out-of-plane anisotropy for magnetic device applicationsHEADWAY TECH INC·Filed 2014·Granted Oct 18, 2016·30 cites·10 claims
- 0898US9466789B2Method of making a high thermal stability reference structure with out-of-plane anisotropy for magnetic device applicationsHEADWAY TECH INC·Filed 2014·Granted Oct 11, 2016·53 cites·19 claims
- 0998US9373780B2Co/X and CoX multilayers with improved out-of-plane anisotropy for magnetic device applicationsHEADWAY TECHNOLOGIES INC·Filed 2013·Granted Jun 21, 2016·19 cites·7 claims
- 1098US8981505B2Mg discontinuous insertion layer for improving MTJ shuntHEADWAY TECHNOLOGIES INC·Filed 2013·Granted Mar 17, 2015·48 cites·17 claims
- 1198US8946834B2High thermal stability free layer with high out-of-plane anisotropy for magnetic device applicationsWANG YU-JEN·Filed 2012·Granted Feb 3, 2015·44 cites·22 claims
- 1298US8541855B2Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applicationsJAN GUENOLE·Filed 2011·Granted Sep 24, 2013·45 cites·14 claims
- 1397US11024797B2Under-cut via electrode for sub 60 nm etchless MRAM devices by decoupling the via etch processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 1, 2021·7 cites·20 claims
- 1497US10797225B2Dual magnetic tunnel junction (DMTJ) stack designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·10 cites·33 claims
- 1597US8871365B2High thermal stability reference structure with out-of-plane aniotropy to magnetic device applicationsWANG YU-JEN·Filed 2012·Granted Oct 28, 2014·33 cites·19 claims
- 1697US8508006B2Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applicationsJAN GUENOLE·Filed 2012·Granted Aug 13, 2013·28 cites·13 claims
- 1796US11877349B2Slices for applications based on multiple active sim profilesT MOBILE INNOVATIONS LLC·Filed 2021·Granted Jan 16, 2024·3 cites·20 claims
- 1896US11601379B1System and method for dynamic physical resource block allocation across networks using a virtualization layerT MOBILE INNOVATIONS LLC·Filed 2022·Granted Mar 7, 2023·5 cites·20 claims
- 1996US10522746B1Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·16 cites·20 claims
- 2096US10516102B1Multiple spacer assisted physical etching of sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·12 cites·18 claims
- 2196US9775121B1Dynamic control of reference-signal transmission power based on reference signal coverage quality at or near half-way point between base stationsSPRINT SPECTRUM LP·Filed 2017·Granted Sep 26, 2017·16 cites·20 claims
- 2296US8223534B2Raising programming currents of magnetic tunnel junctions using word line overdrive and high-k metal gateCHUNG SHINE·Filed 2010·Granted Jul 17, 2012·35 cites·20 claims
- 2396US7573736B2Spin torque transfer MRAM deviceTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Aug 11, 2009·47 cites·21 claims
- 2496US6684453B2Hinge assembly capable of damping door movementFU LUONG HI TECH CO LTD·Filed 2002·Granted Feb 3, 2004·80 cites·3 claims
- 2595US11818961B2Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive re-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·2 cites·20 claims
- 2695US11737122B1Centralized network policy controller and method for operatingT MOBILE INNOVATIONS LLC·Filed 2021·Granted Aug 22, 2023·5 cites·17 claims
- 2795US11227889B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·3 cites·20 claims
- 2895US10868235B2Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·4 cites·20 claims
- 2995US10805831B1Control of coordinated-multipoint service in a virtual radio access networkSPRINT SPECTRUM LP·Filed 2017·Granted Oct 13, 2020·12 cites·20 claims
- 3095US10802374B1Liquid crystal lensUNIV NATIONAL CHIAO TUNG·Filed 2019·Granted Oct 13, 2020·9 cites·9 claims
- 3195US10648069B2Monolayer-by-monolayer growth of MgO layers using Mg sublimation and oxidationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 12, 2020·5 cites·23 claims
- 3295US10388862B1Highly selective ion beam etch hard mask for sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 20, 2019·11 cites·4 claims
- 3395US10304886B2Back-side deep trench isolation (BDTI) structure for pinned photodiode image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 28, 2019·12 cites·20 claims
- 3495US10291541B1Systems and methods for scheduling transmissions from an access nodeSPRINT SPECTRUM LP·Filed 2015·Granted May 14, 2019·22 cites·17 claims
- 3595US10276618B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·8 cites·20 claims
- 3695US10134981B1Free layer sidewall oxidation and spacer assisted magnetic tunnel junction (MTJ) etch for high performance magnetoresistive random access memory (MRAM) devicesHEADWAY TECH INC·Filed 2017·Granted Nov 20, 2018·15 cites·25 claims
- 3795US10015070B1Systems and methods for extending a handover trigger point for a wireless device operating in a connected modeSPRINT SPECTRUM LP·Filed 2016·Granted Jul 3, 2018·21 cites·19 claims
- 3895US9935261B1Dielectric encapsulation layer for magnetic tunnel junction (MTJ) devices using radio frequency (RF) sputteringHEADWAY TECH INC·Filed 2017·Granted Apr 3, 2018·14 cites·24 claims
- 3995US9877213B1Integrated minimization of drive test (MDT) and ticketing in a mobile communication networkSPRINT COMMUNICATIONS CO LP·Filed 2016·Granted Jan 23, 2018·13 cites·20 claims
- 4095US9147833B2Hybridized oxide capping layer for perpendicular magnetic anisotropyHEADWAY TECHNOLOGIES INC·Filed 2013·Granted Sep 29, 2015·18 cites·24 claims
- 4195US8921961B2Storage element for STT MRAM applicationsKULA WITOLD·Filed 2012·Granted Dec 30, 2014·26 cites·20 claims
- 4294US11464068B1Selection of access node to serve a device, with the selection being based on RRC connection establishment failure history as to at least one other deviceSPRINT SPECTRUM LP·Filed 2021·Granted Oct 4, 2022·3 cites·20 claims
- 4394US10516100B2Silicon oxynitride based encapsulation layer for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 24, 2019·8 cites·20 claims
- 4494US9608200B2Hybrid metallic hard mask stack for MTJ etchingHEADWAY TECH INC·Filed 2015·Granted Mar 28, 2017·12 cites·6 claims
- 4594US8698260B2Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applicationsJAN GUENOLE·Filed 2012·Granted Apr 15, 2014·18 cites·40 claims
- 4694US8143683B2In-situ formed capping layer in MTJ devicesWANG YUNG-HUNG·Filed 2010·Granted Mar 27, 2012·40 cites·18 claims
- 4794US7723128B2In-situ formed capping layer in MTJ devicesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted May 25, 2010·42 cites·18 claims
- 4893US12279340B2Slices for applications based on multiple active SIM profilesT MOBILE INNOVATIONS LLC·Filed 2024·Granted Apr 15, 2025·1 cites·20 claims
- 4993US11430823B2Method for manufacturing semiconductor image sensor device having deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·2 cites·20 claims
- 5093US10943940B2Image sensor comprising reflective guide layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·5 cites·20 claims
Showing the top 50 of 354 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Yu-Jen Wang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →