Inventor · disambiguated record
Yun-Hsiang Wang
Also filed as: WANG YUN-HSIANG
14 granted patents·6 pending applications·8 citations·filing 2019–2025
86Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD20
Top patents by PatentIndex Score
20 records- 0194US12278272B2Source leakage current suppression by source surrounding gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 15, 2025·2 cites·20 claims
- 0294US11521915B2Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·3 cites·20 claims
- 0387US11195945B2Cap structure coupled to source to reduce saturation current in HEMT deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 7, 2021·3 cites·20 claims
- 0487US2025338539A1Cap structure coupled to source to reduce saturation current in hemt deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0586US12363938B2Cap structure coupled to source to reduce saturation current in HEMT deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 0682US12100757B2Cap structure coupled to source to reduce saturation current in HEMT deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
- 0778US2024387719A1Barrier structure configured to increase performance of iii-v devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0878US2025267917A1Ring transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0976US12324211B2Ring transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 1076US12094838B2Crack stop ring trench to prevent epitaxy crack propagationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 1175US11742419B2Cap structure coupled to source to reduce saturation current in HEMT deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
- 1275US2024355761A1Crack stop ring trench to prevent epitaxy crack propagationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1375US2024355711A1Front-end-of-line (feol) through semiconductor-on-substrate via (tsv)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1473US12419074B2Barrier structure configured to increase performance of III-V devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 16, 2025·0 cites·20 claims
- 1570US12046537B2Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 23, 2024·0 cites·20 claims
- 1669US2025212484A1Source leakage current suppression by source surrounding gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1768US11664431B2Ring transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·0 cites·20 claims
- 1867US11798899B2Crack stop ring trench to prevent epitaxy crack propagationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·0 cites·20 claims
- 1967US11715792B2Barrier structure configured to increase performance of III-V devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 1, 2023·0 cites·20 claims
- 2050US11791388B2Source leakage current suppression by source surrounding gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 17, 2023·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →