Inventor · disambiguated record
Yung-Hsien Wu
Also filed as: WU YUNG H · WU YUNG-HSIEN
17 granted patents·5 pending applications·78 citations·filing 2001–2025
92Inventor score
Files withPROMOS TECHNOLOGIES INC10TAIWAN SEMICONDUCTOR MFG CO LTD8MATERIALS ANALYSIS TECH INC1NAT UNIV TSING HUA1WU YUNG-HSIEN1
Top patents by PatentIndex Score
22 records- 0180US10008494B2Semiconductor component and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 26, 2018·3 cites·20 claims
- 0277US7015091B1Integration of silicon carbide into DRAM cell to improve retention characteristicsPROMOS TECHNOLOGIES INC·Filed 2004·Granted Mar 21, 2006·17 cites·16 claims
- 0375US9673340B1Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 6, 2017·2 cites·20 claims
- 0474US9570568B2Semiconductor component and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·2 cites·20 claims
- 0568US7112505B2Method of selectively etching HSG layer in deep trench capacitor fabricationPROMOS TECHNOLOGIES INC·Filed 2004·Granted Sep 26, 2006·12 cites·21 claims
- 0666US8288193B2Method of manufacturing selective emitter solar cellWU YUNG-HSIEN·Filed 2010·Granted Oct 16, 2012·2 cites·27 claims
- 0766US7033956B1Semiconductor memory devices and methods for making the samePROMOS TECHNOLOGIES INC·Filed 2004·Granted Apr 25, 2006·12 cites·24 claims
- 0865US7030441B2Capacitor dielectric structure of a DRAM cell and method for forming thereofPROMOS TECHNOLOGIES INC·Filed 2004·Granted Apr 18, 2006·8 cites·5 claims
- 0963US6872621B1Method for removal of hemispherical grained silicon in a deep trenchPROMOS TECHNOLOGIES INC·Filed 2004·Granted Mar 29, 2005·8 cites·21 claims
- 1061US2025311234A1Ferroelectric memory structureMATERIALS ANALYSIS TECH INC·Filed 2025·Application pending·0 cites
- 1153US6872664B2Dual gate nitride processPROMOS TECHNOLOGIES INC·Filed 2003·Granted Mar 29, 2005·4 cites·12 claims
- 1253US6569731B1Method of forming a capacitor dielectric structurePROMOS TECHNOLOGIES INC·Filed 2002·Granted May 27, 2003·4 cites·15 claims
- 1352US2018337248A1High-K Dielectric and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Application pending·0 cites
- 1451US10163516B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·0 cites·20 claims
- 1551US10068984B2Method of manufacturing high-k dielectric using HfO/Ti/Hfo layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 4, 2018·0 cites·19 claims
- 1650US6764962B2Method for forming an oxynitride layerPROMOS TECHNOLOGIES INC·Filed 2002·Granted Jul 20, 2004·3 cites·20 claims
- 1748US10930583B2Capacitor embedded with nanocrystalsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 23, 2021·0 cites·20 claims
- 1847US6835630B2Capacitor dielectric structure of a DRAM cell and method for forming thereofPROMOS TECHNOLOGIES INC·Filed 2003·Granted Dec 28, 2004·1 cites·8 claims
- 1944US10319675B2Capacitor embedded with nanocrystalsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 11, 2019·0 cites·20 claims
- 2040US2014220771A1Worm memory device and process of manufacturing the sameNAT UNIV TSING HUA·Filed 2013·Application pending·0 cites
- 2139US2006102947A1Integration of silicon carbide into DRAM cell to improve retention characteristicsPROMOS TECHNOLOGIES INC·Filed 2005·Application pending·0 cites
- 2230US2003001243A1Method of monitoring ultra-thin nitride quality by wet re-oxidationFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →