Inventor · disambiguated record
Yun-Chi Wu
Also filed as: WU YUN-CHI
48 granted patents·13 pending applications·54 citations·filing 2009–2025
97Inventor score
Top patents by PatentIndex Score
61 records- 0198US11031303B1Deep trench isolation structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 8, 2021·6 cites·12 claims
- 0297US11450574B2Deep trench isolation structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·3 cites·20 claims
- 0394US11508843B1Semiconductor device having fully oxidized gate oxide layer and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 22, 2022·2 cites·20 claims
- 0494US10128259B1Method for manufacturing embedded memory using high-K-metal-gate (HKMG) technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 13, 2018·9 cites·20 claims
- 0593US11575008B2Semiconductor arrangement and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 7, 2023·2 cites·20 claims
- 0692US12094984B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 17, 2024·1 cites·20 claims
- 0792US11532637B2Embedded flash memory cell including a tunnel dielectric layer having different thicknesses over a memory regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·2 cites·20 claims
- 0891US11349035B2Semiconductor device including non-volatile memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·2 cites·20 claims
- 0990US10504912B2Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·4 cites·20 claims
- 1089US10840333B2Semiconductor arrangement and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·3 cites·20 claims
- 1187US12402378B2Semiconductor arrangement including first and second gate electrodes and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 26, 2025·0 cites·20 claims
- 1287US10879257B2Integrated chip having a logic gate electrode and a tunnel dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 29, 2020·3 cites·20 claims
- 1387US10276728B2Semiconductor device including non-volatile memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·3 cites·20 claims
- 1485US2024372011A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1584US2025105099A1Semiconductor arrangement and method for makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1683US12165955B2Semiconductor arrangement and method for makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 1783US11894425B2Semiconductor arrangement and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 6, 2024·0 cites·20 claims
- 1883US10510767B1Integrated circuit and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·2 cites·20 claims
- 1980US12114503B2Integrated chip including a tunnel dielectric layer which has different thicknesses over a protrusion region of a substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 2080US2025204021A1Deep trench isolation structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2180US2025056835A1Integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2279US11990545B2Semiconductor device having fully oxidized gate oxide layer and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 2379US7829448B1Structure of high electron mobility transistor, a device comprising the structure and a method of producing the sameUNIV NAT CHIAO TUNG·Filed 2009·Granted Nov 9, 2010·8 cites·18 claims
- 2478US12266577B2Deep trench isolation structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 2578US10693018B2Method of manufacturing a semiconductor device including non-volatile memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 23, 2020·1 cites·20 claims
- 2678US2025374591A1Semiconductor device having fully oxidized gate oxide layer and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2777US12166121B2Integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 2877US12040397B2Gate electrode extending into a shallow trench isolation structure in high voltage devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·0 cites·20 claims
- 2976US11855201B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 3076US11711917B2Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·0 cites·20 claims
- 3176US2024097027A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3275US11854942B2Semiconductor arrangement and method for makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 3375US9799755B2Method for manufacturing memory device and method for manufacturing shallow trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 24, 2017·2 cites·18 claims
- 3475US2024339533A1Gate electrode extending into a shallow trench isolation structure in high voltage devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3573US11424261B2Integrated circuit with different memory gate work functionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·0 cites·20 claims
- 3673US2025267933A1Method of forming high voltage transistor and structure resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3772US12317584B2Method of forming high voltage transistor and structure resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·0 cites·20 claims
- 3872US11574918B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 7, 2023·0 cites·20 claims
- 3971US10510765B2Memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·1 cites·20 claims
- 4069US11688805B2Integrated circuit structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·0 cites·20 claims
- 4169US11031412B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 8, 2021·0 cites·20 claims
- 4267US12144173B2Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
- 4367US11705515B2Gate electrode extending into a shallow trench isolation structure in high voltage devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·0 cites·20 claims
- 4467US11114452B2Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 7, 2021·0 cites·20 claims
- 4566US10937795B2Seal method to integrate non-volatile memory (NVM) into logic or bipolar CMOS DMOS (BCD) technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 2, 2021·0 cites·20 claims
- 4666US10879258B2Memory cell comprising a metal control gate with a work function for an enlarged operation windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·0 cites·20 claims
- 4764US11462639B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 4, 2022·0 cites·20 claims
- 4864US11189546B2Semiconductor arrangement and method for makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 30, 2021·0 cites·20 claims
- 4962US12471329B2Semiconductor structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 5062US11158647B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·0 cites·20 claims
Showing the top 50 of 61 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Yun-Chi Wu files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →